IPC분류정보
| 국가/구분 |
United States(US) Patent
등록
|
| 국제특허분류(IPC7판) |
|
| 출원번호 |
US-0183169
(1994-01-18)
|
|
발명자
/ 주소 |
- McCormick Fred B. (Maplewood MN) Gladfelter Wayne L. (St. Paul MN) Senzaki Yoshihide (Minneapolis MN)
|
| 출원인 / 주소 |
- Minnesota Mining and Manufacturing Company (St. Paul MN 02) Regents of the University of Minnesota (Minneapolis MN 02)
|
| 인용정보 |
피인용 횟수 :
100 인용 특허 :
0 |
초록
▼
A method is provided for forming films comprising Fe, Ru or Os employing the techniques of chemical vapor deposition to decompose a vapor comprising an organometallic compound of the formula (a): (CO)4ML or (b): M2[mhh4-C4](CO)6; wherein L is a two-electron donor ligand and each R is H, halo, OH, al
A method is provided for forming films comprising Fe, Ru or Os employing the techniques of chemical vapor deposition to decompose a vapor comprising an organometallic compound of the formula (a): (CO)4ML or (b): M2[mhh4-C4](CO)6; wherein L is a two-electron donor ligand and each R is H, halo, OH, alkyl, perfluoroalkyl or aryl; so as to deposit a coating comprising one or more of said metals on the surface of a substrate.
대표청구항
▼
A method for applying a metal film on the surface of a substrate comprising employing the techniques of chemical vapor deposition to decompose a vapor comprising a compound of the formula: (CO)4ML, wherein (a) M is Fe, Ru or Os; and (b) L is 1. (R1)3P, (R1O)3P, (R1)3N, (R1)3As or (R1)3Sb; wherein ea
A method for applying a metal film on the surface of a substrate comprising employing the techniques of chemical vapor deposition to decompose a vapor comprising a compound of the formula: (CO)4ML, wherein (a) M is Fe, Ru or Os; and (b) L is 1. (R1)3P, (R1O)3P, (R1)3N, (R1)3As or (R1)3Sb; wherein each R1 is H, halo, (C1-C10)alkyl, (C1-C10)perfluoroalkyl or (C6-C10)aryl, and each R1 is selected so that L comprises a total of 0-30 carbon atoms; 2. (R1O)3P, wherein each R1 is (C1-C10)alkyl, (C1-C10)perfluoroalkyl or (C6-C10)aryl, and each R1 is selected so that L comprises 3-30 carbon atoms; 3. R1OR1, R1SR1, R1CN, or R1NC, wherein each R1 is (C1-C10)alkyl, (C1-C10)perfluoroalkyl or (C6-C10)aryl; and each R1 is selected so that L comprises 2-30 carbon atoms; 4. (R1)2C〓C(R1)2 or R1C〓CR1, wherein each R1 is H, halo, (C1-C10)alkyl, (C1-C10)perfluoroalkyl, －CHO, －CN, tris(C1-C4)alkylsilyl or (C6-C10)aryl; and each R1 is selected so that L comprises 2-30 carbon atoms; 5. thiocarbonyl; or 6. (R1)2C〓; wherein R1 is H, (C1-C10)alkyl, (C1-C10)perfluoroalkyl, halo, amino or (C6-C10) aryl, and each R1 is selected so that L comprises 1-30 carbon atoms; so as to deposit a film comprising Fe, Ru or Os on said surface.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.