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Method to form a low resistant bond pad interconnect 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/44
출원번호 US-0130225 (1993-10-01)
발명자 / 주소
  • Doan Trung T. (Boise ID) Tuttle Mark E. (Boise ID)
출원인 / 주소
  • Micron Semiconductor, Inc. (Boise ID 02)
인용정보 피인용 횟수 : 238  인용 특허 : 0

초록 ▼

The present invention develops a bond pad interconnect in an integrated circuit device, by forming an aluminum pad; bonding a metal layer (such as copper (Cu), nickel (Ni), tungsten (W), gold (Au), silver (Ag) or platinum (Pt)) or a metal alloy (such as titanium nitride) to the aluminum bond pad by

대표청구항 ▼

A process to form a pad interconnect, said process comprising: a) forming a conductive supporting layer serving as said pad; b) bonding an intermediate conductive layer to said conductive supporting layer; and c) adhering an interconnecting material, comprising a conductive epoxy material, to said i

이 특허를 인용한 특허 (238)

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