$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Photodetector with absorbing region having resonant periodic absorption between reflectors 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-031/04
  • H01L-029/205
출원번호 US-0943823 (1993-02-24)
발명자 / 주소
  • Bryan Robert P. (Boulder CO) Olbright Gregory R. (Boulder CO) Brennan Thomas M. (Albuquerque NM) Tsao Jeffrey Y. (Albuquerque NM)
출원인 / 주소
  • The United States of America as represented by the Secretary of the Department of Energy (Washington DC 06)
인용정보 피인용 횟수 : 35  인용 특허 : 0

초록

A photodetector that is responsive to a wavelength or wavelengths of interest which have heretofore been unrealized. The photodetector includes a resonant cavity structure bounded by first and second reflectors, the resonant cavity structure being resonant at the wavelength or wavelengths of interes

대표청구항

A photodetector responsive to a wavelength or wavelengths of interest, comprising: (a) a resonant cavity structure, said resonant cavity structure bounded by first and second reflector means, said resonant cavity structure being resonant at the wavelength or wavelengths of interest for containing a

이 특허를 인용한 특허 (35)

  1. Kim, Gyung Ock; Kim, In Kyu; Pyun, Kwang Eui, Avalanche photodetector.
  2. Mitra, Pradip, Bias controlled multi-spectral infrared photodetector and imager.
  3. Flory, Curt A.; Trutna, Jr., William R., Coupled resonant cavity surface-emitting laser.
  4. Claiborne, Lewis T.; Mitra, Pradip, Diffraction grating coupled infrared photodetector.
  5. Claiborne, Lewis T.; Mitra, Pradip, Diffraction grating coupled infrared photodetector.
  6. Forrest, Stephen R.; Zhang, Yifan, Extended OLED operational lifetime through phosphorescent dopant profile management.
  7. Hirokazu Mouri JP, Gallium nitride group compound semiconductor photodetector.
  8. Cox,James A.; Kim,Jin K.; Park,Gyoungwon, Mode selective semiconductor mirror for vertical cavity surface emitting lasers.
  9. Lemoff Brian E. ; Babic Dubravko ; Schneider Richard P., Monolithic multiple wavelength VCSEL array.
  10. Mitra,Pradip, Multi-spectral infrared super-pixel photodetector and imager.
  11. Viens, Jean Francois; Agarwal, Anuradha M.; Kimerling, Lionel C., Multi-spectral pixel and focal plane array.
  12. Mitra, Pradip, Multi-wavelength high bandwidth communication receiver and system.
  13. Levine, Peter Alan; Zhu, Rui; Tower, John Robertson, Night vision CMOS imager with optical pixel cavity.
  14. Ledentsov,Nikolai; Shchukin,Vitaly, Optoelectronic device based on an antiwaveguiding cavity.
  15. Brouns Austin John, Patch coupled infrared photodetector.
  16. Chen, Shu-Lu; Na, Yun-Chung, Photonic lock based high bandwidth photodetector.
  17. Chen, Shu-Lu; Na, Yun-Chung, Photonic lock based high bandwidth photodetector.
  18. Knipp,Dietmar; Stiebig,Helmut; B��chner,Hans Joachim; J��ger,Gerd, Photosensor for a transmitted light method used for detecting the direction of movement of intensity maxima and intensity minima of an optical standing wave.
  19. Unlu,M. Selim; Emsley,Matthew K., Reflective layer buried in silicon and method of fabrication.
  20. Dodd Mark A., Resonant cavity field enhancing boundary.
  21. Cheng, Cheng-Wei; Leobandung, Effendi; Li, Ning; Sadana, Devendra K.; Shiu, Kuen-Ting, Resonant cavity strained Group III-V photodetector and LED on silicon substrate and method to fabricate same.
  22. Cheng, Cheng-Wei; Leobandung, Effendi; Li, Ning; Sadana, Devendra K.; Shiu, Kuen-Ting, Resonant cavity strained group III-V photodetector and LED on silicon substrate and method to fabricate same.
  23. Cheng, Cheng-Wei; Leobandung, Effendi; Li, Ning; Sadana, Devendra K.; Shiu, Kuen-Ting, Resonant cavity strained group III-V photodetector and LED on silicon substrate and method to fabricate same.
  24. Cheng, Cheng-Wei; Leobandung, Effendi; Li, Ning; Sadana, Devendra K.; Shiu, Kuen-Ting, Resonant cavity strained group III-V photodetector and LED on silicon substrate and method to fabricate same.
  25. Bowers John E. ; Hawkins Aaron R., Semiconductor hetero-interface photodetector.
  26. Bowers John E. ; Hawkins Aaron R., Semiconductor hetero-interface photodetector.
  27. Bowers John E. ; Hawkins Aaron R., Semiconductor hetero-interface photodetector.
  28. John E. Bowers ; Aaron R. Hawkins, Semiconductor hetero-interface photodetector.
  29. Karakida Shoichi (Tokyo JPX) Miyashita Motoharu (Tokyo JPX) Mihashi Yutaka (Tokyo JPX), Semiconductor laser device.
  30. Kishino Katsumi,JPX ; Kato Toshihiro,JPX, Spin-polarized electron emitter having semiconductor opto-electronic layer with split valence band.
  31. Kishino Katsumi,JPX ; Kato Toshihiro,JPX, Spin-polarized electron emitter having semiconductor opto-electronic layer with split valence band and reflecting mirror.
  32. Forrest, Stephen; Qi, Xiangfei; Slootsky, Michael, Stacked white OLED having separate red, green and blue sub-elements.
  33. Forrest, Stephen; Qi, Xiangfei; Slootsky, Michael, Stacked white OLED having separate red, green and blue sub-elements.
  34. Lewis Taylor Claiborne ; Pradip Mitra, Two-color grating coupled infrared photodetector.
  35. Luke J. Mawst ; Delai Zhou, Vertical-cavity surface-emitting lasers with antiresonant reflecting optical waveguides.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로