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Silicon carbide photodiode with improved short wavelength response and very low leakage current 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-027/14
  • H01L-031/00
출원번호 US-0198679 (1994-02-18)
발명자 / 주소
  • Brown Dale M. (Schenectady NY) Edmond John A. (Apex NC)
출원인 / 주소
  • General Electric Company (Schenectady NY 02)
인용정보 피인용 횟수 : 64  인용 특허 : 0

초록 ▼

A silicon carbide photodiode exhibiting high short-wavelength sensitivity, particularly in the ultraviolet spectrum, and very low reverse leakage current includes a p type conductivity 6H crystalline substrate. A first p-silicon carbide crystalline layer is epitaxially grown on the body. A second n+

대표청구항 ▼

A semiconductor photodiode comprising: a crystalline body of silicon carbide; a lower metallic layer in contact with said body; a first crystalline layer comprising silicon carbide of a first conductivity type epitaxially grown on the body; a second crystalline layer of silicon carbide uniformly dop

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