이 특허를 인용한 특허 (95) 인용/피인용 타임라인 분석

1. Carter, Phillip; Bogush, Gregory H.; De Rege, Francesco M.; Chamberlain, Jeffrey P.; Schroeder, David J.; Mueller, Brian L., Alkali metal-containing polishing system and method.

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2. Willis, Stephen L., Chemical mechanical planarization of conductive material.

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3. Willis,Stephen L., Chemical mechanical planarization of conductive material.

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4. Kaufman, Vlasta Brusic; Kistler, Rodney C., Chemical mechanical polishing method useful for copper substrates.

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5. Ko Yong-sun,KRX ; Hong Chang-ki,KRX, Chemical mechanical polishing methods utilizing pH-adjusted polishing solutions.

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6. Canaperi Donald Francis ; Jagannathan Rangarajan ; Krishnan Mahadevaiyer ; Morgan Clifford Owen ; Wright Terrance Monte, Chemical mechanical polishing of multiple material substrates and slurry having improved selectivity.

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7. Lee, Tae Young; Lee, In Kyung; Choi, Byoung Ho; Park, Yong Soon, Chemical mechanical polishing slurry composition for polishing phase-change memory device and method for polishing phase-change memory device using the same.

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8. Krywanczyk Timothy C. ; David Lawrence D., Chemical mechanical polishing slurry for tungsten.

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9. Kaufman Vlasta Brusic ; Kistler Rodney C. ; Wang Shumin, Chemical mechanical polishing slurry useful for copper substrates.

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10. Kaufman, Vlasta Brusic; Kistler, Rodney C.; Wang, Shumin, Chemical mechanical polishing slurry useful for copper substrates.

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11. Kaufman, Vlasta Brusic; Kistler, Rodney C.; Wang, Slumin, Chemical mechanical polishing slurry useful for copper substrates.

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12. Kaufman,Vlasta Brusic; Kistler,Rodney C.; Wang,Shumin, Chemical mechanical polishing slurry useful for copper substrates.

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13. Kaufman Vlasta Brusic ; Kistler Rodney C. ; Wang Shumin, Chemical mechanical polishing slurry useful for copper/tantalum substrates.

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14. Kevin J. Lee, Chemical-mechanical polishing slurry.

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15. Lee Kevin J., Chemical-mechanical polishing slurry.

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16. Lee Kevin J., Chemical-mechanical polishing slurry.

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17. Eric K. Grieger ; Michael T. Andreas ; Michael A. Walker, Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication.

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18. Grieger Eric K. ; Andreas Michael T. ; Walker Michael A., Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication.

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19. Grieger Eric K. ; Andreas Michael T. ; Walker Michael A., Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication.

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20. Lai, Chien-Hsin; Lin, Juen-Kuen; Li, Huang-Yi; Yu, Kevin, Closed loop concentration control system for chemical mechanical polishing slurry.

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21. Matthew G. Garbett ; Robert D. Tolles ; John S. Hearne ; Manoocher Birang, Delivery of polishing agents in a wafer processing system.

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22. Racanelli,Marco; Hu,Chun; Sherman,Phil N., Double-implant high performance varactor and method for manufacturing same.

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23. Duboust, Alain; Sun, Lizhong; Liu, Feng Q.; Wang, Yuchun; Wang, Yan; Neo, Siew; Chen, Liang-Yuh, Electrolyte composition and treatment for electrolytic chemical mechanical polishing.

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24. Sun, Lizhong; Liu, Feng Q.; Neo, Siew; Tsai, Stan; Chen, Liang-Yuh, Electrolyte with good planarization capability, high removal rate and smooth surface finish for electrochemically controlled copper CMP.

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25. Sun,Lizhong; Liu,Feng Q.; Neo,Siew; Tsai,Stan; Chen,Liang Yuh, Electrolyte with good planarization capability, high removal rate and smooth surface finish for electrochemically controlled copper CMP.

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26. Gonzales David B. ; Bartlett Aaron T., Endpoint stabilization for polishing process.

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27. Gonzales, David B.; Bartlett, Aaron T., Endpoint stabilization for polishing process.

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28. Vereen,Lidia; Skarpelos,Peter N.; Downum,Brian J.; Williams,Patrick; Ko,Terry Kin Ting; Lee,Christopher Heung Gyun; Reynolds,Kenneth Reese; Hearne,John; Hachnochi,Daniel, Flexible polishing fluid delivery system.

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29. Streinz Christopher C. ; Mueller Brian L. ; Lucarelli Michael A. ; Walters Max H., Fluoride additive containing chemical mechanical polishing slurry and method for use of same.

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30. Liu,Feng Q.; Chen,Liang Yuh; Tsai,Stan D.; Hu,Yongqi, Full sequence metal and barrier layer electrochemical mechanical processing.

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31. Liu,Feng Q.; Chen,Liang Yuh; Tsai,Stan D.; Hu,Yongqi, Full sequence metal and barrier layer electrochemical mechanical processing.

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32. Wang,Yan; Liu,Feng Q.; Duboust,Alain; Neo,Siew S.; Chen,Liang Yuh; Hu,Yongqi, Hydrogen bubble reduction on the cathode using double-cell designs.

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33. Sandhu Gurtej S. ; Elliott Richard L. ; Doan Trung T. ; Larsen Jody D., IC mechanical planarization process incorporating two slurry compositions for faster material removal times.

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34. Bullard Timothy Scott ; Lebel Richard John ; Nadeau Rock ; Smith ; Jr. Paul Henry, In-situ pad conditioning process for CMP.

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35. Sabia, Robert, Insitu oxidation for polishing non-oxide ceramics.

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36. Graves,Todd; Vondran,Martin; Benzinger,Martin, Installation for making available highly pure fine chemicals.

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37. Long, Kim Marie; Kamrath, Michael A.; McCue, Sean P., Kit for polishing sapphire surfaces.

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38. Hayden Daniel B., Membrane-like filter element for chemical mechanical polishing slurries.

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39. Lee, Jae Seok; Lee, Kil Sung, Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching.

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40. Wilmer, Jeffrey Alexander; Mackenzie, Daniel Kase; Lull, John Michael; Zadai, Eric A.; Walker, Michael Loren, Method and apparatus for blending process materials.

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41. Wilmer,Jeffrey A.; McAllister,Brian Alan; Swan,Daniel A.; Sitterud,David E., Method and apparatus for blending process materials.

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42. Redeker, Fred C.; Bajaj, Rajeev; Bose, Frank A.; Whitby, A. Jason, Method and apparatus for controlling slurry delivery during polishing.

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43. Sandhu Gurtej Singh ; Doan Trung Tri, Method and apparatus for selectively conditioning a polished pad used in planarizng substrates.

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44. Liu,Feng Q.; Du,Tianbao; Duboust,Alain; Hsu,Wei Yung, Method and composition for electrochemical mechanical polishing processing.

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45. Jia,Renhe; Liu,Feng Q.; Tsai,Stan D.; Chen,Liang Yuh, Method and composition for polishing a substrate.

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46. Liu,Feng Q.; Chen,Liang Yuh; Tsai,Stan D.; Duboust,Alain; Neo,Siew S.; Hu,Yongqi; Wang,Yan; Butterfield,Paul D., Method and composition for polishing a substrate.

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47. Liu,Feng Q.; Du,Tianbao; Duboust,Alain; Wang,Yan; Hu,Yongqi; Tsai,Stan D.; Chen,Liang Yuh; Tu,Wen Chiang; Hsu,Wei Yung, Method and composition for polishing a substrate.

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48. Liu,Feng Q.; Tsai,Stan D.; Hu,Yongqi; Neo,Siew S.; Wang,Yan; Duboust,Alain; Chen,Liang Yuh, Method and composition for polishing a substrate.

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49. Liu,Feng Q.; Tsai,Stan D.; Hu,Yongqi; Neo,Siew S.; Wang,Yan; Duboust,Alain; Chen,Liang Yuh, Method and composition for polishing a substrate.

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50. Urquhart, Karl J.; Thompson, John B.; Hoffman, Joe G., Method for continuously blending chemical solutions.

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51. Koos Daniel A. ; Kim Sung C. ; Sandhu Gurtej S., Method of chemical mechanical polishing.

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52. Koos Daniel A. ; Kim Sung C. ; Sandhu Gurtej S., Method of chemical mechanical polishing.

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53. Koos Daniel A. ; Kim Sung C. ; Sandhu Gurtej S., Method of chemical mechanical polishing.

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54. Jaso Mark Anthony, Method of chemically mechanically polishing an electronic component using a non-selective ammonium persulfate slurry.

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55. Torek Kevin J., Method of making an oxide structure having a finely calibrated thickness.

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56. Kaufman Vlasta Brusic ; Wang Shumin, Method of polishing using multi-oxidizer slurry.

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57. Schricker, April D., Methods for increasing carbon nano-tube (CNT) yield in memory devices.

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58. Lee,Jae Seok; Lee,Kil Sung, Methods of forming integrated circuit devices having polished tungsten metal layers therein.

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59. Long, Kim Marie; Kamrath, Michael A.; McCue, Sean, Methods of polishing sapphire surfaces.

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60. Long, Kim Marie; Kamrath, Michael; McCue, Sean, Methods of polishing sapphire surfaces.

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61. Kaufman Vlasta Brusic ; Wang Shumin, Multi-oxidizer precursor for chemical mechanical polishing.

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62. Kaufman Vlasta Brusic ; Wang Shumin, Multi-oxidizer slurry for chemical mechanical polishing.

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63. Kaufman Vlasta Brusic ; Wang Shumin, Multi-oxidizer slurry for chemical mechanical polishing.

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64. Kevin J. Torek, Oxide structure having a finely calibrated thickness.

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65. Brewer Richard ; Grebinski Thomas J. ; Currie James E. ; Jones Michael ; Mullee William ; Nguyen Ann, Planarization compositions and methods for removing interlayer dielectric films.

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66. Chen, Liang-Yuh; Hsu, Wei-Yung; Duboust, Alain; Morad, Ratson; Carl, Daniel A., Planarization of substrates using electrochemical mechanical polishing.

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67. Grootegoed James A. ; Vanell James F., Point of use dilution tool and method.

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68. Yoshida,Hiroyuki; Hagihara,Toshiya; Hashimoto,Ryoichi; Yoneda,Yasuhiro, Polishing composition.

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69. Yoshida,Hiroyuki; Hagihara,Toshiya; Hashimoto,Ryoichi; Yoneda,Yasuhiro, Polishing composition.

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70. Nakamura,Kenro; Kubota,Takeo; Minamihaba,Gaku, Polishing method and polishing liquid.

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71. Alwan, James J.; Carpenter, Craig M., Polishing slurry and method for chemical-mechanical polishing.

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72. Pozniak, Peter Martin; Provost, Charles Andre; Singh, Rakesh Kumar; Vo, Sau Van; Roberts, Benjamin Rush, Precision liquid mixing apparatus and method.

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73. Pozniak, Peter Martin; Provost, Charles Andre; Singh, Rakesh Kumar; Vo, Sau Van; Roberts, Benjamin Rush, Precision liquid mixing apparatus and method.

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74. Bogush, Gregory H.; Chamberlain, Jeffrey P.; Feeney, Paul M.; Mueller, Brian L.; Schroeder, David J.; Walters, Alicia F., Preequilibrium polishing method and system.

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75. Snyder, David L.; Urquhart, Karl J.; Swindell, Richard, Process and apparatus for blending and distributing a slurry solution.

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76. Wang, Zhihong; Wang, You; Mao, Daxin; Jia, Renhe; Tsai, Stan D.; Hu, Yongqi; Tian, Yuan A.; Chen, Liang Yuh, Process and composition for conductive material removal by electrochemical mechanical polishing.

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77. Kobayashi Thomas S., Process for polishing a semiconductor substrate.

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78. Fanjat, Norbert; Urquart, Karl J.; Soulet, Axel; Langellier, Laurent, Reclaim function for semiconductor processing system.

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79. Nojo Haruki,JPX ; Nakata Rempei,JPX ; Kawashima Kiyotaka,JPX, Semiconductor device polishing apparatus having improved polishing liquid supplying apparatus, and polishing liquid supplying method.

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80. Cadien Kenneth C. ; Feller Daniel A., Slurries for chemical mechanical polishing.

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81. Kenneth C. Cadien ; Daniel A. Feller, Slurries for chemical mechanical polishing.

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82. Cadien Kenneth C. ; Feller Daniel A., Slurries for chemical mechanical polishing tungsten films.

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83. Robinson Karl M. ; Andreas Michael, Slurries for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods and apparatuses for making and using such slurries.

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84. Lee, Jae Seok; Do, Won Joong; Roh, Hyun Soo; Lee, Kil Sung; Lee, Jong Won; Yoon, Bo Un; Hah, Sang Rok; Park, Joon Sang; Hong, Chang Ki, Slurry composition for use in chemical mechanical polishing of metal wiring.

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85. Cardenas Jon ; Plevich Alexander P. ; Kinsey Timothy C., Slurry distribution system that continuously circulates slurry through a distribution loop.

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86. Carpio Ronald A. ; Jairath Rahul ; Kalpathy-Cramer Jayashree, Slurry formulation for chemical mechanical polishing of metals.

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87. Pozniak Peter M. ; Roberts Benjamin R. ; Trang Duy Khanh, Slurry mixing apparatus and method.

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88. Byers, Gary Allen; Derecskei, Bela; Bayer, Benjamin Patrick, Slurry supply and/or chemical blend supply apparatuses, processes, methods of use and methods of manufacture.

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89. Brown, Kyle; Brown, Brian J., Supplying slurry to a polishing pad in a chemical mechanical polishing system.

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90. Mueller,Brian L.; Chamberlain,Jeffery P.; Schroeder,David J., System for the preferential removal of silicon oxide.

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91. Mueller,Brian L.; Chamberlain,Jeffery P.; Schroeder,David J., System for the preferential removal of silicon oxide.

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92. Urquhart, Karl J.; Guarneri, Georges; Marc, Jean-Louis; Fanjat, Norbert; Langellier, Laurent; Colin, Christophe, Systems and methods for managing fluids in a processing environment using a liquid ring pump and reclamation system.

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93. Urquhart, Karl J.; Guarneri, Georges; Marc, Jean-Louis; Fanjat, Norbert; Langellier, Laurent; Colin, Christophe, Systems and methods for managing fluids in a processing environment using a liquid ring pump and reclamation system.

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94. Urquhart, Karl J.; Guarneri, Georges; Marc, Jean-Louis; Fanjat, Norbert; Langellier, Laurent; Colin, Christophe, Systems and methods for managing fluids using a liquid ring pump.

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95. Urquhart, Karl J.; Guarneri, Georges; Marc, Jean-Louis; Fanjat, Norbert; Langellier, Laurent; Colin, Christophe, Systems for managing fluids in a processing environment using a liquid ring pump and reclamation system.

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