이 특허를 인용한 특허 (151)

1. Koyama,Jun; Takemura,Yasuhiko, Active matrix display device comprising an inverter circuit.

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2. Yamazaki Shunpei,JPX ; Kusumoto Naoto,JPX ; Tanaka Koichiro,JPX, Active matrix display device with TFTs of different refractive index.

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3. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Active matrix display in which LDD regions in the driver circuit and the storage capacitor in the pixel section have the same dopant concentration.

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4. Zhang, Hongyong, Active matrix type liquid crystal display device.

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5. Yamazaki, Shunpei; Hamatani, Toshiji; Tanaka, Koichiro, Apparatus and method for doping.

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6. Yamazaki, Shunpei; Hamatani, Toshiji; Tanaka, Koichiro, Apparatus and method for doping.

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7. Yamazaki, Shunpei; Hamatani, Toshiji; Tanaka, Koichiro, Apparatus and method for doping.

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8. Yamazaki,Shunpei; Hamatani,Toshiji; Tanaka,Koichiro, Apparatus and method for doping.

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9. Yamazaki,Shunpei; Hamatani,Toshiji; Tanaka,Koichiro, Apparatus and method for doping.

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10. Hirao Takashi,JPX ; Yoshida Akihisa,JPX ; Kitagawa Masatoshi,JPX, Apparatus and method of manufacturing semiconductor element.

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11. Moslehi Mehrdad M., Direct gas-phase doping of semiconductor wafers using an organic dopant source.

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12. Moslehi Mehrdad M., Direct gas-phase doping of semiconductor wafers using an organic dopant source.

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13. Hongyong Zhang JP, Electro-optical device.

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14. Yamazaki Shunpei,JPX ; Nishi Takeshi,JPX ; Konuma Toshimitsu,JPX ; Shimizu Michio,JPX ; Moriya Kouji,JPX, Electro-optical device.

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15. Yamazaki, Shunpei; Nishi, Takeshi; Konuma, Toshimitsu; Shimizu, Michio; Moriya, Kouji, Electro-optical device.

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16. Yamazaki, Shunpei; Nishi, Takeshi; Konuma, Toshimitsu; Shimizu, Michio; Moriya, Kouji, Electro-optical device.

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17. Yamazaki,Shunpei; Nishi,Takeshi; Konuma,Toshimitsu; Shimizu,Michio; Moriya,Kouji, Electro-optical device.

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18. Hongyong Zhang JP; Masayuki Sakakura JP; Hideaki Kuwabara JP, Electronic device having an active matrix display panel.

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19. Zhang, Hongyong; Sakakura, Masayuki; Kuwabara, Hideaki, Electronic device with active matrix type display panel and image sensor function.

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20. Zhang Hongyong,JPX ; Sakakura Masayuki,JPX ; Kuwabara Hideaki,JPX, Electronic display device having an active matrix display panel.

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21. Zhang, Hongyong; Sakakura, Masayuki; Satou, Yurika, Image sensor and image sensor integrated type active matrix type display device.

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22. Zhang, Hongyong; Sakakura, Masayuki; Satou, Yurika, Image sensor and image sensor integrated type active matrix type display device.

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23. Zhang,Hongyong; Sakakura,Masayuki; Satou,Yurika, Image sensor and image sensor integrated type active matrix type display device.

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24. Zhang,Hongyong; Sakakura,Masayuki; Satou,Yurika, Image sensor and image sensor integrated type active matrix type display device.

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25. Zhang,Hongyong; Sakakura,Masayuki; Kuwabara,Hideaki, Image sensor having thin film transistor and photoelectric conversion element.

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26. Zhang, Hongyong; Sakakura, Masayuki; Kuwabara, Hideaki, Integral-type liquid crystal panel with image sensor function.

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27. Zhang,Hongyong; Sakakura,Masayuki; Kuwabara,Hideaki, Integral-type liquid crystal panel with image sensor function.

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28. Zhang, Hongyong; Sakakura, Masayuki; Kuwabara, Hideaki, Integral-type liquid crystal panel with image sensor function and pixel electrode overlapping photoelectric conversion element.

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29. Kusumoto, Naoto; Tanaka, Koichiro, Laser annealing method.

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30. Kusumoto, Naoto; Tanaka, Koichiro, Laser annealing method.

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31. Kusumoto, Naoto; Tanaka, Koichiro, Laser annealing method.

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32. Kusumoto,Naoto; Tanaka,Koichiro, Laser annealing method.

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33. Kusumoto Naoto,JPX ; Takayama Toru,JPX ; Yonezawa Masato,JPX, Laser annealing method and laser annealing device.

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34. Kusumoto, Naoto; Takayama, Toru; Yonezawa, Masato, Laser annealing method and laser annealing device.

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35. Kusumoto,Naoto; Takayama,Toru; Yonezawa,Masato, Laser annealing method and laser annealing device.

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36. Yamazaki,Shunpei; Tanaka,Koichiro, Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device.

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37. Yamazaki Shunpei,JPX ; Zhang Hongyong,JPX ; Ishihara Hiroaki,JPX, Laser process.

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38. Yamazaki, Shunpei; Zhang, Hongyong; Ishihara, Hiroaki, Laser process.

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39. Yamazaki,Shunpei; Zhang,Hongyong; Ishihara,Hiroaki, Laser process.

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40. Ishihara Hiroaki,JPX ; Nakashita Kazuhisa,JPX ; Ohnuma Hideto,JPX ; Tanaka Nobuhiro,JPX ; Adachi Hiroki,JPX, Laser processing apparatus and laser processing process.

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41. Ishihara, Hiroaki; Nakashita, Kazuhisa; Ohnuma, Hideto; Tanaka, Nobuhiro; Adachi, Hiroki, Laser processing apparatus and laser processing process.

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42. Ohnuma, Hideto; Tanaka, Nobuhiro; Adachi, Hiroki, Laser processing apparatus and laser processing process.

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43. Ohnuma,Hideto; Tanaka,Nobuhiro; Adachi,Hiroki, Laser processing apparatus and laser processing process.

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44. Yamazaki Shunpei,JPX ; Zhang Hongyong,JPX ; Ishihara Hiroaki,JPX, Laser processing apparatus having beam expander.

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45. Seki Yuko,JPX, Laser processing method.

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46. Tanaka Koichiro,JPX ; Yamaguchi Naoaki,JPX, Laser processing method of semiconductor device.

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47. Yamazaki, Shunpei; Takemura, Yasuhiko, Laser processing method, method for forming a flash memory, insulated gate semiconductor device and method for forming the same.

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48. Yamazaki,Shunpei; Ohtani,Hisashi; Shimada,Hiroyuki; Sakama,Mitsunori; Abe,Hisashi; Teramoto,Satoshi, Manufacturing method of a thin film semiconductor device.

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49. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Manufacturing method of thin film semiconductor device.

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50. Shunpei Yamazaki JP; Yasuhiko Takemura JP, Memory device having a floating gate.

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51. Gyoda Kozo,JPX, Method for fabricating semiconductor device and heat treatment apparatus.

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52. Noguchi Takashi,JPX ; Shimogaichi Yasushi,JPX, Method for fabricating thin film transistor device.

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53. Zhang, Hongyong, Method for fabricating thin-film transistor.

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54. Zhang,Hongyong, Method for fabricating thin-film transistor.

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55. Higashi, Seiichiro; Abe, Daisuke, Method for fabrication of field-effect transistor to reduce defects at MOS interfaces formed at low temperature.

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56. Zhang, Hongyong, Method for forming a semiconductor device.

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57. Zhang, Hongyong, Method for forming a semiconductor device.

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58. Yamazaki Shunpei (Tokyo JPX) Zhang Hongyong (Kanagawa JPX) Uochi Hideki (Kanagawa JPX) Adachi Hiroki (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX), Method for forming thin film transistor.

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59. Yamazaki, Shunpei, Method for manufacturing SOI substrate and method for manufacturing semiconductor device.

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60. Noda, Kosei; Takeuchi, Toshihiko; Ishikawa, Makoto, Method for manufacturing SOI substrate and semiconductor device.

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61. Ohtani,Hisashi; Adachi,Hiroki; Miyanaga,Akiharu; Takayama,Toru, Method for manufacturing a semiconductor device.

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62. Yamazaki, Shunpei; Isobe, Atsuo; Yamaguchi, Tetsuji; Godo, Hiromichi, Method for manufacturing a thin film transistor including forming impurity regions by diagonal doping.

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63. Ohtani, Hisashi; Miyanaga, Akiharu; Zhang, Hongyong; Yamaguchi, Naoaki, Method for manufacturing semiconductor device.

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64. Yamazaki,Shunpei; Tanaka,Koichiro, Method for manufacturing semiconductor device including a multi-phase prism.

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65. Naoto Kusumoto JP; Toru Takayama JP; Masato Yonezawa JP, Method for manufacturing semiconductor devices.

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66. Yamazaki, Shunpei; Shimada, Hiroyuki; Takenouchi, Akira; Takemura, Yasuhiko, Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device.

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67. Yamazaki Shunpei,JPX ; Shimada Hiroyuki,JPX ; Takenouchi Akira,JPX ; Takemura Yasuhiko,JPX, Method for processing semiconductor device, apparatus for processing a semiconductor and apparatus for processing semiconductor device.

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68. Kusumoto Naoto,JPX ; Yamazaki Shunpei,JPX, Method for producing insulated gate thin film semiconductor device.

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69. Kusumoto Naoto,JPX ; Yamazaki Shunpei,JPX, Method for producing insulated gate thin film semiconductor device.

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70. Kusumoto, Naoto; Yamazaki, Shunpei, Method for producing insulated gate thin film semiconductor device.

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71. Kusumoto, Naoto; Yamazaki, Shunpei, Method for producing insulated gate thin film semiconductor device.

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72. Kusumoto, Naoto; Yamazaki, Shunpei, Method for producing insulated gate thin film semiconductor device.

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73. Kusumoto,Naoto; Yamazaki,Shunpei, Method for producing insulated gate thin film semiconductor device.

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74. Hongyong Zhang JP; Yasuhiko Takemura JP; Toru Takayama JP, Method for producing semiconductor device.

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75. Ohtani, Hisashi; Takemura, Yasuhiko; Miyanaga, Akiharu; Yamazaki, Shunpei, Method for producing semiconductor device.

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76. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Method for producing semiconductor device.

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77. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Method for producing semiconductor device.

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78. Zhang Hongyong,JPX ; Takemura Yasuhiko,JPX ; Takayama Toru,JPX, Method for producing semiconductor device.

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79. Zhang, Hongyong; Takemura, Yasuhiko; Takayama, Toru, Method for producing semiconductor device.

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80. Shunpei Yamazaki JP, Method of crystallizing a semiconductor layer in a MIS transistor.

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81. Ohtani Hisashi,JPX ; Takemura Yasuhiko,JPX ; Miyanaga Akiharu,JPX ; Yamazaki Shunpei,JPX, Method of crystallizing a silicon film.

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82. Yamazaki, Shunpei, Method of fabricating a MIS transistor.

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83. Yamazaki,Shunpei, Method of fabricating a MIS transistor.

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84. Takenouchi Akira,JPX ; Suzuki Atsunori,JPX ; Ohnuma Hideto,JPX ; Zhang Hongyong,JPX ; Yamazaki Shunpei,JPX, Method of forming a TFT semiconductor device.

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85. Derkits, Jr., Gustav E.; Heffner, William R.; Parayanthal, Padman; Carroll, Patrick J.; Muthiah, Ranjani C., Method of forming a laser circuit having low penetration ohmic contact providing impurity gettering and the resultant laser circuit.

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86. Shoji Tatsumi,JPX, Method of forming a semiconductor device using an excimer laser to selectively form the gate insulator.

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87. Katoh Yuukoh,JPX, Method of forming para-dielectric and ferro-dielectric capacitors over a silicon substrate.

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88. Sandhu, Gurtej, Method of forming photonics structures.

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89. Noguchi Takashi,JPX ; Ogawa Tohru,JPX ; Ikeda Yuji,JPX, Method of forming polycrystalline silicon layer on substrate and surface treatment apparatus thereof.

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90. Shunpei Yamazaki JP, Method of manufacturing a TFT with Ge seeded amorphous Si layer.

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91. Takano Tamae,JPX ; Ohnuma Hideto,JPX ; Ohtani Hisashi,JPX ; Nakajima Setsuo,JPX ; Yamazaki Shunpei,JPX, Method of manufacturing a semiconductor device.

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92. Yamazaki, Shunpei; Ohtani, Hisashi; Shimada, Hiroyuki; Sakama, Mitsunori; Abe, Hisashi; Teramoto, Satoshi, Method of manufacturing a semiconductor device.

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93. Yamazaki,Shunpei; Ohtani,Hisashi; Shimada,Hiroyuki; Sakama,Mitsunori; Abe,Hisashi; Teramoto,Satoshi, Method of manufacturing a semiconductor device.

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94. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Method of manufacturing a semiconductor device.

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95. Nakajima,Setsuo; Shiga,Aiko; Makita,Naoki; Matsuo,Takuya, Method of manufacturing a semiconductor device and semiconductor manufacturing apparatus.

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96. Nakajima,Setsuo; Shiga,Aiko; Makita,Naoki; Matsuo,Takuya, Method of manufacturing a semiconductor device by irradiating with a laser beam.

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97. Yamazaki Shunpei,JPX ; Zhang Hongyong,JPX ; Ishihara Hiroaki,JPX, Method of manufacturing a semiconductor device by using a homogenized rectangular laser beam.

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98. Shunpei Yamazaki JP; Hongyong Zhang JP; Hiroaki Ishihara JP, Method of manufacturing a semiconductor device utilizing a laser annealing process.

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99. Yamamoto Ichiro,JPX, Method of manufacturing semiconductor device.

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100. Yamazaki, Shunpei; Ohtani, Hisashi, Method of manufacturing semiconductor device.

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101. Tsukamoto Hironori,JPX, Method of manufacturing semiconductor devices.

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102. Yamazaki,Shunpei; Isobe,Atsuo; Yamaguchi,Tetsuji; Godo,Hiromichi, Method of manufacturing thin film semiconductor device.

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103. Kousai Takamasa,JPX ; Zhang Hongyong,JPX ; Miyanaga Akiharu,JPX, Method of processing semiconductor device with laser.

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104. Kousai Takamasa,JPX ; Zhang Hongyong,JPX ; Miyanaga Akiharu,JPX, Method of processing semiconductor device with laser.

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105. Samant Mahesh Govind ; Stohr Joachim, Method of producing a multi-domain alignment layer by bombarding ions of normal incidence.

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106. Yamazaki Shunpei,JPX ; Kusumoto Naoto,JPX ; Tanaka Koichiro,JPX, Method of producing a semiconductor device with overlapped scanned linear lasers.

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107. Grupp, Joachim; Poli, Gian-Carlo; Baroni, Pierre-Yves; Wagner, Estelle; Hoffmann, Patrik, Method of substrate with transparent electrodes and devices incorporating it.

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108. Walther, Steven R., Methods and apparatus for plasma doping and ion implantation in an integrated processing system.

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109. Raymond M. Warner, Jr. ; John E. MacCrisken, Monocrystalline three-dimensional integrated-circuit technology.

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110. Zhang, Hongyong; Yamazaki, Shunpei; Takemura, Yasuhiko, Process for laser processing and apparatus for use in the same.

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111. Zhang,Hongyong; Yamazaki,Shunpei; Takemura,Yasuhiko, Process for laser processing and apparatus for use in the same.

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112. Shunpei Yamazaki JP; Hisashi Ohtani JP, Process for producing semiconductor thin film devices using group 14 element and high temperature oxidizing treatment to achieve a crystalline silicon film.

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113. Sugano, Yukiyasu; Fujino, Masahiro; Mano, Michio; Asano, Akihiko; Ino, Masumitsu; Urazono, Takenobu; Takatoku, Makoto, Process for producing thin film semiconductor device and laser irradiation apparatus.

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114. Quick, Nathaniel R; Joshi, Pooran C; Duty, Chad Edward; Jellison, Jr., Gerald Earle; Angelini, Joseph Attilio, Processing of insulators and semiconductors.

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115. Tenegal, Francois; Guizard, Benoit; Herlin-Boime, Nathalie; Porterat, Dominique, Production of nanometric or sub-micrometric powders in continuous flux.

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116. Moffatt, Stephen; Ranish, Joseph M., Pulse train annealing method and apparatus.

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117. Moffatt, Stephen; Ranish, Joseph M., Pulse train annealing method and apparatus.

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118. Yamazaki,Shunpei; Koyama,Jun, Semiconductor device.

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119. Zhang, Hongyong, Semiconductor device and electronic device.

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120. Zhang,Hongyong, Semiconductor device and electronic device.

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121. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.

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122. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.

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123. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.

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124. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.

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125. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.

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126. Yamazaki,Shunpei; Kimura,Hajime, Semiconductor device and integral image recognition/display apparatus.

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127. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and manufacturing method thereof.

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128. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and manufacturing method thereof.

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129. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and manufacturing method thereof.

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130. Yamazaki,Shunpei; Arai,Yasuyuki; Koyama,Jun, Semiconductor device and manufacturing method thereof.

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131. Yamazaki,Shunpei; Arai,Yasuyuki; Koyama,Jun, Semiconductor device and manufacturing method thereof.

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132. Yamazaki, Shunpei; Fukunaga, Takeshi, Semiconductor device and method for manufacturing same.

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133. Yamazaki, Shunpei; Fukunaga, Takeshi, Semiconductor device and method for manufacturing same.

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134. Yamazaki,Shunpei; Fukunaga,Takeshi, Semiconductor device and method for manufacturing same.

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135. Ohtani Hisashi,JPX ; Takemura Yasuhiko,JPX ; Miyanaga Akiharu,JPX ; Yamazaki Shunpei,JPX, Semiconductor device and method for producing the same.

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136. Yamazaki, Shunpei; Kusumoto, Naoto; Tanaka, Koichiro, Semiconductor device and method for producing the same.

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137. Ohtani,Hisashi; Yamazaki,Shunpei, Semiconductor device and method of manufacturing the same.

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138. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device comprising a pixel unit including an auxiliary capacitor.

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139. Ohtani, Hisashi; Adachi, Hiroki; Miyanaga, Akiharu; Takayama, Toru, Semiconductor device comprising first insulating film, second insulating film comprising organic resin on the first insulating film, and pixel electrode over the second insulating film.

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140. Zhang,Hongyong, Semiconductor device having a conductive layer with a light shielding part.

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141. Yamazaki, Shunpei; Zhang, Hongyong; Takemura, Yasuhiko, Semiconductor device having an aluminum nitride film.

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142. Zhang, Hongyong; Takayama, Toru, Semiconductor device having channel formation region comprising silicon and containing a group IV element.

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143. Yamazaki Shunpei,JPX ; Kusumoto Naoto,JPX ; Tanaka Koichiro,JPX, Semiconductor device having channel refractive index in first and second directions.

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144. Ohtani, Hisashi; Yamazaki, Shunpei, Semiconductor device method of manufacturing the same.

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145. Ohtani,Hisashi; Miyanaga,Akiharu; Zhang,Hongyong; Yamaguchi,Naoaki, Semiconductor device with residual nickel from crystallization of semiconductor film.

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146. Yukihiko Nakata ; Apostolos Voutsas ; John Hartzell, Sputtered silicon target for fabrication of polysilicon thin film transistors.

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147. Nakajima Setsuo,JPX ; Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Teramoto Satoshi,JPX ; Hamatani Toshiji,JPX, Substrate of semiconductor device and fabrication method thereof as well as semiconductor device and fabrication method thereof.

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148. Nakajima, Setsuo; Yamazaki, Shunpei; Ohtani, Hisashi; Teramoto, Satoshi; Hamatani, Toshiji, Substrate of semiconductor device and fabrication method thereof as well as semiconductor device and fabrication method thereof.

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149. Nakajima,Setsuo; Yamazaki,Shunpei; Ohtani,Hisashi; Teramoto,Satoshi; Hamatani,Toshiji, Substrate of semiconductor device and fabrication method thereof as well as semiconductor device and fabrication method thereof.

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150. Yamazaki, Shunpei; Ohtani, Hisashi; Shimada, Hiroyuki; Sakama, Mitsunori; Abe, Hisashi; Teramoto, Satoshi, Substrate processing apparatus and a manufacturing method of a thin film semiconductor device.

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151. Yamazaki, Shunpei, Transistor having source/drain with graded germanium concentration.

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