[특허]Insulated gate semiconductor device

Insulated gate semiconductor device 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H03K-017/16
출원번호	US-0113896 (1993-08-31)
우선권정보	JP-0236903 (1992-09-04); JP-0007614 (1993-01-20)
발명자 / 주소	Majumdar Gourab (Fukuoka JPX) Hatae Shinji (Fukuoka JPX) Tabata Mitsuharu (Tokyo JPX) Marumo Takashi (Fukuoka JPX)
출원인 / 주소	Mitsubishi Denki Kabushiki Kaisha (Tokyo JPX 03)
인용정보	피인용 횟수 : 29 인용 특허 : 0

초록 ▼

In order to prevent a malfunction caused by an electrical noise and limit an excessive main current at a high speed while cutting off the same to a value close to zero, the main current is regulated by an IGBT (1) which is connected with a load. A part of this main current is shunted to another IGBT (2). The as-shunted current flows through a resistor (3), to be converted to a voltage across the resistor (3). When the main current is excessively increased by shorting of the load or the like, this voltage exceeds a prescribed value so that a transistor (5) and a thyristor (7) enter conducting states. Consequently, a voltage across a gate (G) and an emitter (E) of the IGBT (1) is so reduced as to cut off the main current. The transistor (5) prevents the main current from excessive increase since the same has a high speed of response, while the thyristor (7) cuts off the main current to zero since the same has lower resistance in conduction.

대표청구항 ▼

An insulated gate semiconductor device comprising: (a) a first insulated gate element having a first current electrode, a second current electrode, and a first control electrode being insulated from said first and second current electrodes, a first conducting state being attained between said first and second current electrodes in response to a first voltage being applied across said first control electrode and said second current electrodes, said first conducting state shifting from a cut-off state in response to an increase of said first voltage; (b) a second insulated gate element having a third current electrode, a fourth current electrode, and a second control electrode being insulated from said third and fourth current electrodes, a second conducting state being attained between said third and fourth current electrodes in response to a second voltage being applied across said second control electrode and said fourth current electrode, said second conducting state shifting from a cut-off state in response to an increase of said second voltage, said third current electrode being connected with said first current electrode, said second control electrode being connected with said first control electrode, said fourth current electrode being coupled with said second current electrode; (c) a first resistor connected between said second current electrode and said fourth current electrode; (d) gate driving means having an output terminal coupled to said first and second control electrodes for outputting a controlled third voltage to said output terminal; (e) a transistor element having a collector electrode, an emitter electrode and a base electrode, said collector electrode being coupled to said first and second control electrodes, said base electrode being connected to said fourth current electrode, said emitter electrode being coupled with said second current electrode; and (f) a thyristor element having an anode electrode, a cathode electrode and a gate electrode, said anode and cathode electrodes conducting upon temporary increase of a voltage across said gate and cathode electrodes in excess of a prescribed value, said anode electrode being coupled to said first and second control electrodes, said cathode electrode being connected to said second current electrode, and said gate electrode being coupled to said fourth current electrode.

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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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