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[미국특허] Controlled etching of oxides via gas phase reactions 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/311
출원번호 US-0219961 (1994-03-30)
발명자 / 주소
  • Grant Robert W. (Allenstown PA) Ruzyllo Jerzy (State College PA) Torek Kevin (State College PA)
출원인 / 주소
  • Penn State Research Foundation (University Park PA 02)
인용정보 피인용 횟수 : 197  인용 특허 : 0

초록 ▼

Oxides are etched with a halide-containing species and a low molecular weight organic molecule having a high vapor pressure at standard conditions, where etching is performed at preset wafer temperature in an enclosed chamber at a pressure such that all species present in the chamber, including wate

대표청구항 ▼

A method of etching oxides on a surface of a substrate, said substrate being at a temperature, said method comprising etching with a gas phase mixture of a halide-containing species, an organic material having a higher vapor pressure than water at standard conditions of room temperature and pressure

이 특허를 인용한 특허 (197) 인용/피인용 타임라인 분석

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