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Vertical type heat treatment system 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/00
출원번호 US-0184055 (1994-01-21)
우선권정보 JP-0008514 (1993-01-21); JP-0008515 (1993-01-21); JP-0008516 (1993-01-21)
발명자 / 주소
  • Sakata Kazunari (Sagamihara JPX) Kadobe Masato (Tokyo JPX) Furuya Isao (Yokohama JPX) Watanabe Shingo (Kanagawa JPX) Fukushima Hiroki (Sagamihara JPX) Iwai Hiroyuki (Sagamihara JPX)
출원인 / 주소
  • Tokyo Electron Limited (Tokyo JPX 03) Tokyo Electron Tohoku Limited (Esashi JPX 03)
인용정보 피인용 횟수 : 47  인용 특허 : 0

초록

A vertical heat treatment system for heat treating a large number of semiconductor wafers housed in a boat at once includes a heat treatment unit having a boat loading/unloading port, a boat section communicating with the heat treatment unit through the boat loading/unloading port, an elevator mecha

대표청구항

A vertical heat treatment system for heat treating a large number of semiconductor wafers housed in a boat simultaneously, comprising: a heat treatment unit having a boat loading/unloading port; a boat section communicating with said heat treatment unit through the boat loading/unloading port; eleva

이 특허를 인용한 특허 (47)

  1. Ahn Yo-han,KRX ; Yoon Jin-chul,KRX ; Yang Chang-jip,KRX ; Kim Ho-wang,KRX, Apparatus for guiding air current in a wafer loading chamber for chemical vapor deposition equipment.
  2. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Apparatus for supercritical processing of a workpiece.
  3. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Apparatus for supercritical processing of multiple workpieces.
  4. Chang Sung-Hun,KRX, Chuck assembly with a contamination prevention device for a semiconductor wafer transfer apparatus.
  5. Jones,William Dale, Control of fluid flow in the processing of an object with a fluid.
  6. Hung Cheng-Chang,TWX ; Lin Lien-Fang,TWX, Diffusion furnace system for preventing gas leakage.
  7. Sheydayi,Alexei; Sutton,Thomas, Gate valve for plus-atmospheric pressure semiconductor process vessels.
  8. Seiichi Yoshida JP; Takashi Tanahashi JP; Akira Onodera JP; Motoki Akimoto JP, Heat treatment method and heat treatment apparatus.
  9. Yoshida, Seiichi; Tanahashi, Takashi; Onodera, Akira; Akimoto, Motoki, Heat treatment method that includes a low negative pressure.
  10. Sutton, Thomas R.; Biberger, Maximilan A., High pressure compatible vacuum chuck for semiconductor wafer including lift mechanism.
  11. Jones, William D., High pressure fourier transform infrared cell.
  12. Biberger, Maximilian A.; Layman, Frederick Paul; Sutton, Thomas Robert, High pressure processing chamber for semiconductor substrate.
  13. Biberger,Maximilian A.; Layman,Frederick Paul; Sutton,Thomas Robert, High pressure processing chamber for semiconductor substrate.
  14. Jones,William Dale, High-pressure processing chamber for a semiconductor wafer.
  15. Jones,William Dale, High-pressure processing chamber for a semiconductor wafer.
  16. Tsuneharu Masuda JP; Takahiko Ishii JP; Yutaka Narukawa JP, High-temperature and high-pressure treatment device.
  17. Kikuchi, Hiroshi, Loading unit and processing system.
  18. Toba, Katsuya, Loading unit and processing system.
  19. Sheydayi,Alexei, Method and apparatus for clamping a substrate in a high pressure processing system.
  20. Goshi,Gentaro, Method and apparatus for cooling motor bearings of a high pressure pump.
  21. Matsunaga, Tatsuhisa; Teramoto, Masahiro; Akutsu, Norio; Noto, Kouichi, Method and apparatus for processing substrates and method for manufacturing a semiconductor device.
  22. Matsunaga, Tatsuhisa; Teramoto, Masahiro; Akutsu, Norio; Noto, Kouichi, Method and apparatus for processing substrates and method for manufacturing a semiconductor device.
  23. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Method and apparatus for supercritical processing of multiple workpieces.
  24. Parent,Wayne M.; Goshi,Gentaro, Method and system for cooling a pump.
  25. Parent,Wayne M., Method and system for determining flow conditions in a high pressure processing system.
  26. Parent, Wayne M.; Geshell, Dan R., Method and system for passivating a processing chamber.
  27. Hansen,Brandon; Lowe,Marie, Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid.
  28. Kawamura,Kohei; Asano,Akira; Miyatani,Koutarou; Hillman,Joseph T.; Palmer,Bentley, Method for supercritical carbon dioxide processing of fluoro-carbon films.
  29. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Method for supercritical processing of multiple workpieces.
  30. Biberger,Maximilian Albert; Layman,Frederick Paul; Sutton,Thomas Robert, Method of supercritical processing of a workpiece.
  31. Surthi, Shyam; Moore, Scott E., Methods and apparatuses for heating semiconductor wafers.
  32. Sheydayi,Alexei, Non-contact shuttle valve for flow diversion in high pressure systems.
  33. Sheydayi,Alexei, Pressure energized pressure vessel opening and closing device and method of providing therefor.
  34. Wuester,Christopher D., Process flow thermocouple.
  35. Mastroianni Sal, Process for forming a semiconductor device.
  36. Hishiya, Katsuyuki; Takahashi, Kiichi, Processing system for process object and thermal processing method for process object.
  37. Suzaki, Kenichi; Wang, Jie, Producing method of semiconductor device and substrate processing apparatus.
  38. Mullee, William H., Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process.
  39. Weaver Robert A. ; McEntire William ; Peck Kevin, Semiconductor processing furnace heating subassembly.
  40. Yamada Yoshiaki,JPX ; Watanabe Hiroshi,JPX, Semiconductor wafer storage apparatus and semiconductor device fabricating apparatus using said apparatus.
  41. Suzaki, Kenichi; Wang, Jie, Substrate processing apparatus.
  42. Gale,Glenn; Hillman,Joseph T.; Jacobson,Gunilla; Palmer,Bentley, System and method for processing a substrate using supercritical carbon dioxide processing.
  43. Jacobson,Gunilla; Yellowaga,Deborah, Treatment of a dielectric layer using supercritical CO.
  44. Kevwitch, Robert, Treatment of substrate using functionalizing agent in supercritical carbon dioxide.
  45. Sheydayi,Alexei, Vacuum chuck utilizing sintered material and method of providing thereof.
  46. Maeda Kiyohiko,JPX ; Kakizaki Satoshi,JPX ; Taniyama Tomoshi,JPX ; Yanagawa Hidehiro,JPX ; Suzaki Ken-ichi,JPX, Vertical furnace of a semiconductor manufacturing apparatus and a boat cover thereof.
  47. Kobayashi, Makoto, Vertical heat treatment apparatus and method for cooling the apparatus.
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