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Guard ring electrostatic chuck 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H02N-013/00
출원번호 US-0169932 (1993-12-20)
발명자 / 주소
  • Barnes Michael S. (San Francisco CA) Keller John H. (Newburgh NY) Logan Joseph S. (Jamestown RI) Tompkins Robert E. (Pleasant Valley NY) Westerfield
  • Jr. Robert P. (Montgomery NY)
출원인 / 주소
  • International Business Machines Corporation (Armonk NY 02)
인용정보 피인용 횟수 : 64  인용 특허 : 0

초록

An electrostatic chuck suppresses the formation of vacuum arcs between the back of the wafer being processed and the body of the chuck by the interposition of a guard ring that floats close to the self-bias potential induced by the plasma on the wafer, thereby capacitively dividing the voltage betwe

대표청구항

An electrostatic chuck system for holding, in a vacuum ambient, by electrostatic attraction of a DC potential a workpiece having a workpiece radius comprising: at least two circularly symmetric, concentric aluminum electrodes having a hard-coat alumina coating and together providing a planar clampin

이 특허를 인용한 특허 (64)

  1. Hoi Cheong Sun ; Dominic Stephen Rosati ; Eugene Samuel Puliniak ; Bawa Singh ; Nitin Vithalbhai Desai, AC waveforms biasing for bead manipulating chucks.
  2. Sun Hoi Cheong Steve ; Poliniak Eugene Samuel ; Rosati Dominic Stephen ; Singh Bawa ; Desai Nitin Vithalbhai, AC waveforms biasing for bead manipulating chucks.
  3. Parkhe Vijay, Apparatus for igniting a plasma in a plasma processing chamber.
  4. Grosshart Paul F. ; Kerns Ralph C. ; Laquidara Peter P., Bias-tracking D.C. power circuit for an electrostatic chuck.
  5. Hoffman, Daniel J.; Miller, Matthew L.; Yang, Jang Gyoo; Chae, Heeyeop; Barnes, Michael; Ishikawa, Tetsuya; Ye, Yan, Capacitively coupled plasma reactor with magnetic plasma control.
  6. Yang, Jang Gyoo; Hoffman, Daniel J.; Carducci, James D.; Buchberger, Jr., Douglas A.; Hagen, Melissa; Miller, Matthew L.; Chiang, Kang-Lie; Delgadino, Gerardo A., Capacitively coupled plasma reactor with uniform radial distribution of plasma.
  7. Reynolds, Glyn J., Conductive seal ring electrostatic chuck.
  8. Thomas E. Wicker ; Alan M. Schoepp ; Robert A. Maraschin, Contamination controlling method and apparatus for a plasma processing chamber.
  9. Howald, Arthur M.; Holland, John P., Dechucking method and apparatus for workpieces in vacuum processors.
  10. Howald,Arthur; Holland,John P., Dechucking method and apparatus for workpieces in vacuum processors.
  11. Poliniak Eugene Samuel ; Sun Hoi Cheong Steve ; Desai Nitin Vithalbhai ; Kumar Nalin ; Roach William Ronald ; Hammer Lawrence Harrison ; Southgate Peter David ; Singh Bawa ; Rivenburg Howard Christop, Dry powder deposition apparatus.
  12. Yang,Jang Gyoo; Hoffman,Daniel J.; Shannon,Steven C.; Burns,Douglas H.; Lee,Wonseok; Kim,Kwang Soo, Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output.
  13. Jones Phillip Lawrence ; Jafarian-Tehrani Seyed Jafar ; Atlas Boris V. ; Liu David R-Chen ; Tokunaga Ken Edward ; Chen Ching-Hwa, Dynamic feedback electrostatic wafer chuck.
  14. Goto, Yoshinobu, Electrostatic chuck.
  15. Yamada Naohito,JPX ; Ohno Masashi,JPX ; Ushikoshi Ryusuke,JPX, Electrostatic chuck.
  16. Yamada Naohito,JPX ; Ohno Masashi,JPX ; Ushikoshi Ryusuke,JPX, Electrostatic chuck.
  17. Krishnaraj Padmanabhan ; Lue Brian ; Lingampalli Ramkishan Rao ; Wu Shun Jackson, Electrostatic chuck and method for fabricating the same.
  18. Michael Scott Barnes ; John Howard Keller ; Joseph S. Logan ; Robert E. Tompkins ; Robert Peter Westerfield, Jr., Electrostatic chuck with reference electrode.
  19. Sun Hoi Cheong Steve ; Pletcher Timothy Allen, Electrostatic chucks and a particle deposition apparatus therefor.
  20. Sun Hoi Cheong Steve ; Pletcher Timothy Allen, Electrostatic chucks and a particle deposition apparatus therefor.
  21. Howald Arthur M. ; Holland John P., Electrostatic dechucking method and apparatus for dielectric workpieces in vacuum processors.
  22. Buchberger, Jr.,Douglas A.; Hoffman,Daniel J.; Ramaswamy,Kartik; Nguyen,Andrew; Hanawa,Hiorji; Collins,Kenneth S.; Al Bayati,Amir, Gasless high voltage high contact force wafer contact-cooling electrostatic chuck.
  23. Zheng, Hui; Tsai, Kenneth; Wang, Hong; He, Yongxiang; Garcia, III, Jesus G.; Deyo, Daniel M., Guard for electrostatic chuck.
  24. Barnes Michael S. (San Francisco CA) Keller John H. (Newburgh NY) Logan Joseph S. (Jamestown RI) Tompkins Robert E. (Pleasant Valley NY) Westerfield ; Jr. Robert P. (Montgomery NY), Guard ring electrostatic chuck.
  25. Michael Scott Barnes ; John Howard Keller ; Joseph S. Logan ; Robert E. Tompkins ; Robert Peter Westerfield, Jr., Guard ring electrostatic chuck.
  26. Hoffman,Daniel J.; Ye,Yan; Katz,Dan; Buchberger, Jr.,Douglas A.; Zhao,Xiaoye; Chiang,Kang Lie; Hagen,Robert B.; Miller,Matthew L., MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression.
  27. Hoffman,Daniel J.; Ye,Yan; Katz,Dan; Buchberger, Jr.,Douglas A.; Zhao,Xiaoye; Chiang,Kang Lie; Hagen,Robert B.; Miller,Matthew L., MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression.
  28. Hoffman, Daniel J.; Ye, Yan; Katz, Dan; Buchberger, Jr., Douglas A.; Zhao, Xiaoye; Chiang, Kang-Lie; Hagen, Robert B.; Miller, Matthew L., Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression.
  29. Graven Andrew J. ; Schmidt Melvin ; McCuen Kenneth A. ; Ra Yunju, Method and apparatus for clamping a substrate.
  30. Fotland, Richard; Bowers, John; Jameson, William, Method and apparatus for producing uniform small portions of fine powders and articles thereof.
  31. Fotland, Richard; Bowers, John; Jameson, William, Method for depositing particles onto a substrate using an alternating electric field.
  32. Parkhe Vijay, Method for igniting a plasma in a plasma processing chamber.
  33. Hoffman,Daniel J.; Gold,Ezra Robert, Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of plural chamber parameters.
  34. Hoffman,Daniel J.; Gold,Ezra Robert, Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure.
  35. Hoffman, Daniel J.; Gold, Ezra Robert, Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of selected chamber parameters.
  36. Hoi Cheong Steve Sun ; Timothy Allen Pletcher, Method of depositing particles with an electrostatic chuck.
  37. Sun, Hoi Cheong Steve; Pletcher, Timothy Allen, Method of depositing particles with an electrostatic chuck.
  38. Hoffman, Daniel J., Method of determining plasma ion density, wafer voltage, etch rate and wafer current from applied bias voltage and current.
  39. Hoffman, Daniel J., Method of determining wafer voltage in a plasma reactor from applied bias voltage and current and a pair of constants.
  40. Yang,Jang Gyoo; Hoffman,Daniel J.; Shannon,Steven C.; Burns,Douglas H.; Lee,Wonseok; Kim,Kwang Soo, Method of feedback control of ESC voltage using wafer voltage measurement at the bias supply output.
  41. Hoffman, Daniel J., Method of operating a plasma reactor chamber with respect to two plasma parameters selected from a group comprising ion density, wafer voltage, etch rate and wafer current, by controlling chamber parameters of source power and bias power.
  42. Mashiro Supika (Saitama-Prefecture JPX) Sakamoto Kiyotaka (Tokyo JPX), Method of removing substrate and apparatus for controlling applied voltage.
  43. Kutney, Michael C.; Hoffman, Daniel J.; Delgadino, Gerardo A.; Gold, Ezra R.; Sinha, Ashok; Zhao, Xiaoye; Burns, Douglas H.; Ma, Shawming, Methods to avoid unstable plasma states during a process transition.
  44. Poliniak, Eugene Samuel; Steve Sun, Hoi Cheong; Desai, Nitin Vithalbhai; Kumar, Nalin; Roach, William Ronald; Hammer, Lawrence Harrison; Southgate, Peter David; Singh, Bawa; Rivenburg, Howard Christo, Methods using dry powder deposition apparatuses.
  45. Poliniak, Eugene Samuel; Sun, Hoi Cheong Steve; Desai, Nitin Vithalbhai; Kumar, Nalin; Roach, William Ronald; Hammer, Lawrence Harrison; Southgate, Peter David; Singh, Bawa; Rivenburg, Howard Christo, Methods using dry powder deposition apparatuses.
  46. Fairbairn Kevin ; Sinha Ashok, Multideck wafer processing system.
  47. Husain Anwar, Multilayered electrostatic chuck and method of manufacture thereof.
  48. Sivaramakrishnan Visweswaren ; Ravi Tirunelveli S. ; Ravi Kramadhati V., Multiple substrate processing apparatus for enhanced throughput.
  49. Castro Edward Ross ; Tokunaga Ken Edwin ; Atlas Boris V. ; Liu David Ru-Chen, Negative offset bipolar electrostatic chucks.
  50. Hoffman,Daniel J., Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power.
  51. Buchberger, Jr.,Douglas A.; Hoffman,Daniel J.; Regelman,Olga; Carducci,James; Horioka,Keiji; Yang,Jang Gyoo, Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface.
  52. Hoffman, Daniel J.; Lindley, Roger A.; Kutney, Michael C.; Salinas, Martin J.; Tavassoli, Hamid F.; Horioka, Keiji; Buchberger, Jr., Douglas A., Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction.
  53. Hoffman, Daniel J.; Yin, Gerald Zheyao, Plasma reactor with overhead RF electrode tuned to the plasma.
  54. Hoffman,Daniel J.; Yin,Gerald Zheyao; Ye,Yan; Katz,Dan; Buchberger, Jr.,Douglas A.; Zhao,Xiaoye; Chiang,Kang Lie; Hagen,Robert B.; Miller,Matthew L., Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression.
  55. Hoffman,Daniel; Yang,Jang Gyoo; Buchberger, Jr.,Douglas A.; Burns,Douglas, Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independent.
  56. Hofman,Daniel J.; Sun,Jennifer Y.; Thach,Senh; Ye,Yan, Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination.
  57. Dible Robert D. ; Lenz Eric H. ; Lambson Albert M., Power segmented electrode.
  58. Dible Robert D. ; Lenz Eric H. ; Lambson Albert M., Power segmented electrode.
  59. Wicker, Thomas E., Semiconductor processing equipment having improved process drift control.
  60. Wicker, Thomas E., Semiconductor processing equipment having improved process drift control.
  61. Rossman Kent ; Lue Brian ; Redeker Fred C., Shield for an electrostatic chuck.
  62. Howald, Arthur M., System and method for dechucking a workpiece from an electrostatic chuck.
  63. Ross Charles P. ; Lai Canfeng, Unbalanced bipolar electrostatic chuck power supplies and methods thereof.
  64. Dhindsa Rajinder ; Franchuk Steven ; Manzanilla Carlos ; Tokunaga Ken E., Wafer electrical discharge control by wafer lifter system.
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