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Method of making a semiconductor device using a low dielectric constant material 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/02
출원번호 US-0247195 (1994-05-20)
발명자 / 주소
  • Gnade Bruce E. (Dallas TX) Cho Chih-Chen (Richardson TX) Smith Douglas M. (Albuquerque NM)
출원인 / 주소
  • Texas Instruments Incorporated (Dallas TX 02)
인용정보 피인용 횟수 : 126  인용 특허 : 0

초록

This invention provides a process for making a semiconductor device with reduced capacitance between adjacent conductors. This process can include applying a solution between conductors 24, and then gelling, surface modifying, and drying the solution to form an extremely porous dielectric layer 28.

대표청구항

A method of forming a porous dielectric on a semiconductor device comprising: (a) providing a first conductor and a horizontally adjacent second conductor, formed on a substrate wherein a gap is formed between said first and said second conductors; (b) providing a solution capable of forming a wet g

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