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Method for forming a film and method for manufacturing a thin film transistor 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/86
출원번호 US-0015512 (1993-02-09)
우선권정보 JP-0023986 (1992-02-10)
발명자 / 주소
  • Matsumoto Tomotaka (Kawasaki JPX) Inoue Jun (Kawasaki JPX) Ichimura Teruhiko (Kawasaki JPX) Murata Yuji (Kawasaki JPX) Watanabe Junichi (Kawasaki JPX) Nagahiro Yoshio (Kawasaki JPX) Hodate Mari (Kawa
출원인 / 주소
  • Fujitsu Limited (Kawasaki JPX 03)
인용정보 피인용 횟수 : 221  인용 특허 : 0

초록

A crystal silicon film deposited on an insulating film made of a binary system material or a binary system semiconductor film formed by an atomic layer deposition method has a grain as large as approximately 200 nm. Thus, the mobility of carriers is increased. The crystal silicon thereof is grown wi

대표청구항

A method for forming a film comprising the steps of: a) depositing a film formed of a binary system material on a base substance by an atomic layer deposition method in which the base substance on which the film is formed is exposed separately to two or more ambiences, one of which contains a first

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