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Physical vapor deposition employing ion extraction from a plasma 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-014/35
출원번호 US-0133595 (1993-10-08)
발명자 / 주소
  • Helmer John C. (260 S. Balsamina Way Palo Alto CA 94028) Lai Kwok F. (959 Van Auken Cir. Palo Alto CA 94303) Anderson Robert L. (3169 Emerson Palo Alto CA 94306)
인용정보 피인용 횟수 : 196  인용 특허 : 0

초록 ▼

A sputter magnetron ion source for producing an intense plasma in a cathode container which ionizes a high and substantial percentage of the sputter cathode material and means for extracting the ions of the cathode material in a beam. The ion extraction means is implemented by a magnetic field cusp

대표청구항 ▼

A sputter magnetron comprising: a. high intensity plasma inducing means, said high intensity plasma inducing means including, i) a sputter cathode, said sputter cathode being a particle confining container having walls and one open side to permit extraction of ions from said container, said walls ha

이 특허를 인용한 특허 (196)

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