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Light emitting diode and process for fabricating the same 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-033/00
  • H01L-027/15
  • H01L-031/12
출원번호 US-0268644 (1994-06-30)
우선권정보 JP-0160610 (1993-06-30); JP-0287987 (1993-11-17)
발명자 / 주소
  • Unno Tsunehiro (Ibaraki JPX) Konno Taichiro (Ibaraki JPX)
출원인 / 주소
  • Hitachi Cable Ltd. (Tokyo JPX 03)
인용정보 피인용 횟수 : 152  인용 특허 : 0

초록 ▼

Disclosed is a light emitting diode in which double hetero-structure epitaxial layers defining a light emitting portion are connected with a substrate by a mesa portion, and a cavity layer is formed by providing a mesa portion between the substrate and an adjoining layer of the epitaxial layers. Res

대표청구항 ▼

A light emitting diode which is formed with a plurality of epitaxial layers defining a light emitting portion on a substrate, comprising: a column-shaped mesa portion providing cavities on a surface of said substrate, said epitaxial layers being partially connected with said substrate by said column

이 특허를 인용한 특허 (152)

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