로그인시 본인확인과정이 필요할 수 있습니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
DataON 바로가기
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Edison 바로가기
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Kafe 바로가기
| 국가/구분 | United States(US) Patent 등록 |
|---|---|
| 국제특허분류(IPC7판) |
|
| 출원번호 | US-0216107 (1994-03-21) |
| 우선권정보 | JP-0086744 (1993-03-22); JP-0086745 (1993-03-22); JP-0086746 (1993-03-22); JP-0086747 (1993-03-22) |
| 발명자 / 주소 |
|
| 출원인 / 주소 |
|
| 인용정보 | 피인용 횟수 : 292 인용 특허 : 0 |
Amorphous silicon in impurity regions (source and drain regions or N-type or p-type regions) of TFT and TFD are crystallized and activated to lower electric resistance, by depositing film having a catalyst element such as nickel (Ni), iron (Fe), cobalt (Co) or platinum (Pt) on or beneath an amorphou
Amorphous silicon in impurity regions (source and drain regions or N-type or p-type regions) of TFT and TFD are crystallized and activated to lower electric resistance, by depositing film having a catalyst element such as nickel (Ni), iron (Fe), cobalt (Co) or platinum (Pt) on or beneath an amorphous silicon film, or introducing such a catalyst element into the amorphous silicon film by ion implantation and subsequently crystallizing the same by applying heat annealing at an appropriate temperature.
A method of manufacturing a semiconductor circuit comprising: a first step of forming a semiconductor film substantially in an amorphous state on a substrate, a second step of introducing a catalyst element for promoting crystallization to said semiconductor film at a concentration of 1×1017 to 2×10
A method of manufacturing a semiconductor circuit comprising: a first step of forming a semiconductor film substantially in an amorphous state on a substrate, a second step of introducing a catalyst element for promoting crystallization to said semiconductor film at a concentration of 1×1017 to 2×1020 atoms/cm3, a third step of forming an insulation film, a gate electrode of a thin film transistor and a mask material for a thin film diode on said semiconductor film, a fourth step of adding a doping impurity to the semiconductor film using said gate electrode and said mask material as a mask and a fifth step of activating the introduced impurity by applying heat annealing to said semiconductor film.
Copyright KISTI. All Rights Reserved.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.