이 특허를 인용한 특허 (201)

1. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX, Active matrix display device having at least two transistors having LDD region in one pixel.

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2. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Active matrix display in which LDD regions in the driver circuit and the storage capacitor in the pixel section have the same dopant concentration.

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3. Ohtani, Hisashi, Camera having display device utilizing TFT.

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4. Yamazaki, Shunpei; Takayama, Toru; Murakami, Satoshi; Kimura, Hajime, Display device.

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5. Hayakawa, Masahiko; Murakami, Satoshi; Yamazaki, Shunpei; Akimoto, Kengo, Display device and method of fabricating the same.

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6. Yamazaki, Shunpei; Takayama, Toru; Murakami, Satoshi; Kimura, Hajime, Display device including an opening formed in a gate insulating film, a passivation film, and a barrier film.

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7. Yamazaki, Shunpei; Takayama, Toru; Murakami, Satoshi; Kimura, Hajime, Display device with capacitor elements.

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8. Yamazaki,Shunpei; Murakami,Satoshi; Koyama,Jun; Tanaka,Yukio; Kitakado,Hidehito; Ohnumo,Hideto, Display including casing and display unit.

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9. Koyama, Jun; Kawasaki, Yuji, Driver circuit for an active matrix display device.

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10. Ikeda, Takayuki; Yamazaki, Shunpei, Electrooptical device and a method of manufacturing the same.

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11. Ikeda,Takayuki; Yamazaki,Shunpei, Electrooptical device and a method of manufacturing the same.

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12. Ohori Tatsuya,JPX ; Wada Tamotsu,JPX ; Ohgata Kohji,JPX ; Kakehi Tatsuya,JPX ; Yanai Ken-ichi,JPX, Fabrication process of a liquid crystal display device with improved yield.

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13. Yamazaki,Shunpei; Adachi,Hiroki, Ferroelectric liquid crystal and goggle type display devices.

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14. Yamazaki, Shunpei; Adachi, Hiroki, Ferroelectric liquid crystal display device comprising gate-overlapped lightly doped drain structure.

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15. Chowdhury, Murshed; Lin, Andrew; Kai, James; Zhang, Yanli; Alsmeier, Johann, High voltage field effect transistor with laterally extended gate dielectric and method of making thereof.

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16. Yamazaki, Shunpei; Takemura, Yasuhiko; Zhang, Hongyong, Insulated gate field effect semiconductor devices and method of manufacturing the same.

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17. Yamazaki, Shunpei; Takemura, Yasuhiko; Zhang, Hongyong, Insulated gate field effect semiconductor devices and method of manufacturing the same.

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18. Yamazaki,Shunpei; Takemura,Yasuhiko; Zhang,Hongyong, Insulated gate field effect semiconductor devices and method of manufacturing the same.

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19. Koichiro Tanaka JP, Laser irradiation apparatus, laser irradiation method, beam homogenizer, semiconductor device, and method of manufacturing the semiconductor device.

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20. Yamazaki, Shunpei, Light-emitting device.

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21. Koezuka, Junichi; Yamade, Naoto; Sato, Yuhei; Okazaki, Yutaka; Yamazaki, Shunpei, Manufacturing method of semiconductor device.

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22. Koezuka, Junichi; Yamade, Naoto; Sato, Yuhei; Okazaki, Yutaka; Yamazaki, Shunpei, Manufacturing method of semiconductor device.

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23. Koezuka, Junichi; Yamade, Naoto; Sato, Yuhei; Okazaki, Yutaka; Yamazaki, Shunpei, Manufacturing method of semiconductor device.

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24. Koezuka, Junichi; Yamade, Naoto; Sato, Yuhei; Okazaki, Yutaka; Yamazaki, Shunpei, Manufacturing method of semiconductor device.

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25. Koezuka, Junichi; Yamade, Naoto; Sato, Yuhei; Okazaki, Yutaka; Yamazaki, Shunpei, Manufacturing method of semiconductor device comprising oxide semiconductor.

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26. Hongyong Zhang JP; Naoaki Yamaguchi JP; Yasuhiko Takemura JP, Manufacturing of TFT device by backside laser irradiation.

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27. Yamazaki Shunpei (Tokyo JPX) Takemura Yasuhiko (Kanagawa JPX), Method for fabricating MIS semiconductor device.

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28. Ha Yong Min (Kyongki-do KRX), Method for fabricating a thin film transistor using silicide layer.

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29. Yamaguchi Naoaki,JPX, Method for manufacturing semiconductor device.

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30. Takemura Yasuhiko,JPX ; Teramoto Satoshi,JPX, Method for manufacturing semiconductor device with removable spacers.

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31. Yamamoto Mutsuo,JPX, Method for manufacturing thin film transistor.

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32. Yamamoto Mutsuo,JPX, Method for manufacturing thin film transistor.

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33. Tanaka, Koichiro; Ohnuma, Hideto, Method for manufacturing transistor semiconductor devices with step of annealing to getter metal with phosphorous.

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34. Park, Seong-Ju; Kim, Kyoung-Kook, Method for manufacturing zinc oxide semiconductors.

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35. Zhang, Hongyong, Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor.

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36. Kusumoto Naoto,JPX ; Yamazaki Shunpei,JPX, Method for producing insulated gate thin film semiconductor device.

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37. Kusumoto Naoto,JPX ; Yamazaki Shunpei,JPX, Method for producing insulated gate thin film semiconductor device.

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38. Kusumoto, Naoto; Yamazaki, Shunpei, Method for producing insulated gate thin film semiconductor device.

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39. Kusumoto, Naoto; Yamazaki, Shunpei, Method for producing insulated gate thin film semiconductor device.

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40. Kusumoto, Naoto; Yamazaki, Shunpei, Method for producing insulated gate thin film semiconductor device.

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41. Kusumoto,Naoto; Yamazaki,Shunpei, Method for producing insulated gate thin film semiconductor device.

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42. Shunpei Yamazaki JP; Yasuhiko Takemura JP, Method for producing semiconductor device.

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43. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Method for producing semiconductor device.

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44. Yamazaki, Shunpei, Method of fabricating a semiconductor device.

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45. Yamazaki, Shunpei, Method of fabricating a semiconductor device.

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46. Yamazaki, Shunpei, Method of fabricating a semiconductor device.

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47. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.

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48. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.

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49. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.

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50. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.

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51. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.

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52. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.

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53. Yamazaki,Shunpei, Method of fabricating a semiconductor device by doping impurity element into a semiconductor layer through a gate electrode.

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54. Hayakawa, Masahiko; Murakami, Satoshi; Yamazaki, Shunpei; Akimoto, Kengo, Method of fabricating display device.

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55. Konuma Toshimitsu (Kanagawa JPX) Hiroki Masaaki (Kanagawa JPX) Zhang Hongyong (Kanagawa JPX) Yamamoto Mutsuo (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX), Method of fabricating thin film semiconductor integrated circuit.

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56. Zhang,Hongyong; Ohnuma,Hideto; Yamaguchi,Naoaki; Takemura,Yasuhiko, Method of manufacturing a TFT with laser irradiation.

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57. Yamazaki, Shunpei, Method of manufacturing a semiconductor device.

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58. Yamazaki, Shunpei, Method of manufacturing a semiconductor device.

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59. Yamazaki, Shunpei, Method of manufacturing a semiconductor device.

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60. Yamazaki, Shunpei, Method of manufacturing a semiconductor device.

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61. Yamazaki, Shunpei, Method of manufacturing a semiconductor device.

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62. Yamazaki, Shunpei, Method of manufacturing a semiconductor device having a gate electrode formed over a silicon oxide insulating layer.

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63. Yamazaki, Shunpei; Ikeda, Takayuki; Fukunaga, Takeshi, Method of manufacturing a semiconductor device having thin film transistor and capacitor.

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64. Yamazaki, Shunpei, Method of manufacturing a semiconductor device including thermal oxidation to form an insulating film.

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65. Yamazaki, Shunpei, Method of manufacturing semiconductor device having island-like single crystal semiconductor layer.

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66. Shimada,Hiroyuki, Method of manufacturing semiconductor device including etching a conductive layer by using a gas including SiCland NF.

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67. Bin Yu, Method of providing a gate conductor with high dopant activation.

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68. Tanaka Koichiro,JPX ; Ohnuma Hideto,JPX, Method of using phosphorous to getter crystallization catalyst in a p-type device.

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69. Yamazaki, Shunpei; Ohtani, Hisashi; Koyama, Jun; Fukunaga, Takeshi, Nonvolatile memory and electronic apparatus.

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70. Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Shibata Hiroshi,JPX ; Fukunaga Takeshi,JPX, Pixel TFT and driver TFT having different gate insulation width.

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71. Iyer Ravi, Planarization using plasma oxidized amorphous silicon.

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72. Iyer Ravi, Planarization using plasma oxidized amorphous silicon.

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73. Iyer, Ravi, Planarization using plasma oxidized amorphous silicon.

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74. Takei Michiko,JPX ; Ohori Tatsuya,JPX ; Zhang Hongyong,JPX ; Uochi Hideki,JPX, Process for fabricating liquid crystal electro-optical device comprising complementary thin film field effect transistor.

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75. Fukunaga, Takeshi, Process for production of SOI substrate and process for production of semiconductor device.

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76. Fukunaga, Takeshi, Process for production of SOI substrate and process for production of semiconductor device including the selective forming of porous layer.

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77. Rupp, Roland; Gutt, Thomas; Treu, Michael, Production of an integrated circuit including electrical contact on SiC.

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78. Rupp, Roland; Gutt, Thomas; Treu, Michael, Production of an integrated circuit including electrical contact on SiC.

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79. Koyama, Jun; Kawasaki, Yuji, Redundancy shift register circuit for driver circuit in active matrix type liquid crystal display device.

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80. Koyama, Jun; Kawasaki, Yuji, Redundancy shift register circuit for driver circuit in active matrix type liquid crystal display device.

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81. Koyama, Jun; Kawasaki, Yuji, Redundancy shift register circuit for driver circuit in active matrix type liquid crystal display device.

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82. Koyama,Jun; Kawasaki,Yuji, Redundancy shift register circuit for driver circuit in active matrix type liquid crystal display device.

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83. Luning Scott (Menlo Park CA) Alvis Roger (Cupertino CA), Self-aligned implant energy modulation for shallow source drain extension formation.

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84. Koyama, Jun, Semiconductor device.

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85. Koyama, Jun, Semiconductor device.

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86. Takemura,Yasuhiko; Teramoto,Satoshi, Semiconductor device.

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87. Takemura,Yasuhiko; Teramoto,Satoshi, Semiconductor device.

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88. Yamazaki, Shunpei, Semiconductor device.

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89. Yamazaki, Shunpei, Semiconductor device.

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90. Zhang Hongyong,JPX ; Yamaguchi Naoaki,JPX ; Takemura Yasuhiko,JPX, Semiconductor device.

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91. Takemura Yasuhiko,JPX ; Teramoto Satoshi,JPX, Semiconductor device and a manufacturing method for the same.

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92. Yasuhiko Takemura JP; Satoshi Teramoto JP, Semiconductor device and a manufacturing method for the same.

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93. Takemura, Yasuhiko; Teramoto, Satoshi, Semiconductor device and a method for manufacturing the same.

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94. Takemura, Yasuhiko; Teramoto, Satoshi, Semiconductor device and a method for manufacturing the same.

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95. Takemura, Yasuhiko; Teramoto, Satoshi, Semiconductor device and a method for manufacturing the same.

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96. Takemura, Yasuhiko; Teramoto, Satoshi, Semiconductor device and a method for manufacturing the same.

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97. Zhang, Hongyong; Yamaguchi, Naoaki; Takemura, Yasuhiko, Semiconductor device and a semiconductor integrated circuit.

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98. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.

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99. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.

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100. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.

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101. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.

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102. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.

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103. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.

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104. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.

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105. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.

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106. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.

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107. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.

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108. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.

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109. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.

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110. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.

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111. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.

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112. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.

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113. Yamazaki, Shunpei; Suzawa, Hideomi; Ono, Koji; Kusuyama, Yoshihiro, Semiconductor device and fabrication method thereof.

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114. Yamazaki, Shunpei; Suzawa, Hideomi; Ono, Koji; Kusuyama, Yoshihiro, Semiconductor device and fabrication method thereof.

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115. Yamazaki, Shunpei; Suzawa, Hideomi; Ono, Koji; Kusuyama, Yoshihiro, Semiconductor device and fabrication method thereof.

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116. Yamazaki, Shunpei; Suzawa, Hideomi; Ono, Koji; Kusuyama, Yoshihiro, Semiconductor device and fabrication method thereof.

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117. Yamazaki, Shunpei; Suzawa, Hideomi; Ono, Koji; Kusuyama, Yoshihiro, Semiconductor device and fabrication method thereof.

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118. Yamazaki,Shunpei; Murakami,Satoshi; Koyama,Jun; Tanaka,Yukio; Kitakado,Hidehito; Ohnumo,Hideto, Semiconductor device and fabrication method thereof.

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119. Tanaka, Koichiro; Ohnuma, Hideto, Semiconductor device and manufacturing method thereof.

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120. Yamazaki, Shunpei, Semiconductor device and manufacturing method thereof.

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121. Yamazaki, Shunpei, Semiconductor device and manufacturing method thereof.

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122. Yamazaki, Shunpei, Semiconductor device and manufacturing method thereof.

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123. Yamazaki, Shunpei, Semiconductor device and manufacturing method thereof.

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124. Yamazaki, Shunpei, Semiconductor device and manufacturing method thereof.

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125. Yamazaki, Shunpei, Semiconductor device and manufacturing method thereof.

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126. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and manufacturing method thereof.

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127. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and manufacturing method thereof.

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128. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and manufacturing method thereof.

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129. Yamazaki, Shunpei; Koyama, Jun; Shibata, Hiroshi; Fukunaga, Takeshi, Semiconductor device and manufacturing method thereof.

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130. Yamazaki,Shunpei, Semiconductor device and manufacturing method thereof.

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131. Yamazaki,Shunpei; Arai,Yasuyuki; Koyama,Jun, Semiconductor device and manufacturing method thereof.

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132. Yamazaki,Shunpei; Arai,Yasuyuki; Koyama,Jun, Semiconductor device and manufacturing method thereof.

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133. Yamazaki,Shunpei; Suzawa,Hideomi; Ono,Koji; Arai,Yasuyuki, Semiconductor device and manufacturing method thereof.

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134. Zhang Hongyong,JPX ; Ohnuma Hideto,JPX ; Yamaguchi Naoaki,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for fabricating the same.

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135. Zhang, Hongyong; Ohnuma, Hideto; Yamaguchi, Naoaki; Takemura, Yasuhiko, Semiconductor device and method for fabricating the same.

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136. Yamazaki, Shunpei; Hamatani, Toshiji, Semiconductor device and method for forming the same.

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137. Konuma, Toshimitsu; Sugawara, Akira; Uehara, Yukiko; Zhang, Hongyong; Suzuki, Atsunori; Ohnuma, Hideto; Yamaguchi, Naoaki; Suzawa, Hideomi; Uochi, Hideki; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.

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138. Konuma, Toshimitsu; Sugawara, Akira; Uehara, Yukiko; Zhang, Hongyong; Suzuki, Atsunori; Ohnuma, Hideto; Yamaguchi, Naoaki; Suzawa, Hideomi; Uochi, Hideki; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.

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139. Konuma,Toshimitsu; Sugawara,Akira; Uehara,Yukiko; Zhang,Hongyong; Suzuki,Atsunori; Ohnuma,Hideto; Yamaguchi,Naoaki; Suzawa,Hideomi; Uochi,Hideki; Takemura,Yasuhiko, Semiconductor device and method for manufacturing the same.

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140. Ohtani, Hisashi; Fujimoto, Etsuko, Semiconductor device and method of fabricating the same.

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141. Ohtani, Hisashi; Fujimoto, Etsuko, Semiconductor device and method of fabricating the same.

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142. Fujimoto, Etsuko; Murakami, Satoshi; Tsunoda, Akira, Semiconductor device and method of manufacturing the same.

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143. Fujimoto,Etsuko; Murakami,Satoshi; Tsunoda,Akira, Semiconductor device and method of manufacturing the same.

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144. Ohtani, Hisashi; Takano, Tamae; Yamazaki, Shunpei, Semiconductor device and method of manufacturing the same.

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145. Yamazaki, Shunpei; Adachi, Hiroki, Semiconductor device and method of manufacturing the same.

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146. Yamazaki,Shunpei; Adachi,Hiroki, Semiconductor device and method of manufacturing the same.

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147. Yamazaki, Shunpei, Semiconductor device and method of manufacturing thereof.

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148. Yamazaki, Shunpei; Koyama, Jun; Shibata, Hiroshi; Fukunaga, Takeshi, Semiconductor device and process for production thereof.

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149. Yamazaki, Shunpei; Koyama, Jun; Shibata, Hiroshi; Fukunaga, Takeshi, Semiconductor device and process for production thereof.

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150. Yamazaki, Shunpei; Koyama, Jun; Shibata, Hiroshi; Fukunaga, Takeshi, Semiconductor device and process for production thereof.

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151. Yamazaki,Shunpei; Koyama,Jun; Shibata,Hiroshi; Fukunaga,Takeshi, Semiconductor device and process for production thereof.

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152. Yamazaki,Shunpei; Koyama,Jun; Shibata,Hiroshi; Fukunaga,Takeshi, Semiconductor device and process for production thereof.

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153. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device comprising a pixel unit including an auxiliary capacitor.

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154. Yamazaki,Shunpei, Semiconductor device comprising thin film transistor comprising conductive film having tapered edge.

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155. Yamazaki, Shunpei, Semiconductor device having LDD regions.

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156. Yamaguchi Yasuo,JPX ; Maeda Shigenobu,JPX ; Kim Iljong,JPX, Semiconductor device having SOI structure and method of fabricating the same.

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157. Yamaguchi, Yasuo; Maeda, Shigenobu; Kim, Iijong, Semiconductor device having SOI structure and method of fabricating the same.

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158. Yamazaki, Shunpei; Ohtani, Hisashi; Koyama, Jun; Fukunaga, Takeshi, Semiconductor device having buried oxide film.

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159. Ohtani, Hisashi, Semiconductor device having display device.

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160. Ohtani, Hisashi, Semiconductor device having display device.

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161. Ohtani,Hisashi, Semiconductor device having display device.

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162. Ohtani, Hisashi, Semiconductor device having driver circuit and pixel section provided over same substrate.

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163. Konuma, Toshimitsu; Sugawara, Akira; Uehara, Yukiko; Zhang, Hongyong; Suzuki, Atsunori; Ohnuma, Hideto; Yamaguchi, Naoaki; Suzawa, Hideomi; Uochi, Hideki; Takemura, Yasuhiko, Semiconductor device having pixel electrode and peripheral circuit.

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164. Yamazaki, Shunpei; Ikeda, Takayuki; Fukunaga, Takeshi, Semiconductor device having thin film transistors.

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165. Yamazaki,Shunpei; Koyama,Jun; Shibata,Hiroshi; Fukunaga,Takeshi, Semiconductor device including a thin film transistor and a storage capacitor.

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166. Yamazaki, Shunpei; Murakami, Satoshi; Hayakawa, Masahiko; Kato, Kiyoshi; Osame, Mitsuaki; Hirosure, Takashi; Fujikawa, Saishi, Semiconductor device including multiple insulating films.

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167. Yamazaki, Shunpei; Murakami, Satoshi; Hayakawa, Masahiko; Kato, Kiyoshi; Osame, Mitsuaki; Hirosure, Takashi; Fujikawa, Saishi, Semiconductor device including multiple insulating films.

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168. Konuma, Toshimitsu; Sugawara, Akira; Uehara, Yukiko; Zhang, Hongyong; Suzuki, Atsunori; Ohnuma, Hideto; Yamaguchi, Naoaki; Suzawa, Hideomi; Uochi, Hideki; Takemura, Yasuhiko, Semiconductor device including transistors with silicided impurity regions.

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