[특허]Semiconductor memory device having thin film transistor and method of producing the same

Semiconductor memory device having thin film transistor and method of producing the same 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	G11C-011/412
출원번호	US-0373502 (1995-01-17)
발명자 / 주소	Ema Taiji (Kawasaki JPX) Itabashi Kazuo (Kawasaki JPX)
출원인 / 주소	Fujitsu Limited (Kawasaki JPX 03)
인용정보	피인용 횟수 : 56 인용 특허 : 0

초록 ▼

A thin film transistor (TFT) load type static random access memory (SRAM) which includes a memory capacitor in addition to the stray capacitance. The SRAM includes a semiconductor substrate and a memory cell provided on the semiconductor substrate. The memory cell includes first and second transfer transistors, first and second driver transistors, first and second thin film transistor loads and first and second memory capacitors. The first and second memory capacitors include a storage electrode, a dielectric layer which covers the storage electrode, and an opposing electrode formed on the dielectric layer. A connection region is provided in which the storage electrode of the first memory capacitor, the drain region of the second thin film transistor load and the gate electrode of the first driver transistor are connected.

대표청구항 ▼

A semiconductor memory device comprising a semiconductor substrate and a memory cell provided on the semiconductor substrate, the memory cell comprising: first and second transfer transistors, each having a source region, a drain region and a gate electrode; first and second driver transistors, each having a source region, a drain region and a gate electrode; first and second thin film transistor loads, each having a source region, a drain region, a channel region and a gate electrode; first and second memory capacitors, each comprising a storage electrode, a dielectric layer which covers the storage electrode, and an opposing electrode formed on the dielectric layer, the storage electrode of the first memory capacitor being elongated over the channel region of the first thin film transistor load; and a connection region in which the storage electrode of the first memory capacitor, the drain region of the second thin film transistor load, the gate electrode of the first thin film transistor load and the gate electrode of the first driver transistor are connected.

이 특허를 인용한 특허 (56)

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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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메일정보	받는사람 (필수) @ 보내는사람 (선택) @ 제목 내용 KISTI 검색결과 이메일 서비스
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연합인증

Semiconductor memory device having thin film transistor and method of producing the same 원문보기

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Semiconductor memory device having thin film transistor and method of producing the same 원문보기

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