로그인시 본인확인과정이 필요할 수 있습니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
DataON 바로가기
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Edison 바로가기
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Kafe 바로가기
| 국가/구분 | United States(US) Patent 등록 |
|---|---|
| 국제특허분류(IPC7판) |
|
| 출원번호 | US-0277746 (1994-07-20) |
| 우선권정보 | JP-0204774 (1993-07-27); JP-0208996 (1993-07-30) |
| 발명자 / 주소 |
|
| 출원인 / 주소 |
|
| 인용정보 | 피인용 횟수 : 421 인용 특허 : 0 |
After a pattern is transferred on silicon film crystallized by annealing, the silicon film is annealed by radiation of intense rays for a short time. Especially, in the crystallizing process by annealing, an element which promotes crystallization such as nickel is doped therein. The area not crystal
After a pattern is transferred on silicon film crystallized by annealing, the silicon film is annealed by radiation of intense rays for a short time. Especially, in the crystallizing process by annealing, an element which promotes crystallization such as nickel is doped therein. The area not crystallized by annealing is also crystallized by radiation of intense rays and a condensed silicon film is formed. After a metal element which promotes crystallization is doped, annealing by light for a short time is performed by radiating intense rays onto the silicon film crystallized by annealing in an atmosphere containing halide. After the surface of the silicon film is oxidized by heating or by radiating intense rays in a halogenated atmosphere and an oxide film is formed on the silicon film, the oxide film is then etched. As a result, nickel in the silicon film is removed.
A method of fabricating a semiconductor device comprising: forming a non-monocrystal silicon film above a substrate; forming a catalyst element for promoting a crystallization of silicon in contact therewith; crystallizing the non-monocrystal silicon film by thermal annealing after forming said cata
A method of fabricating a semiconductor device comprising: forming a non-monocrystal silicon film above a substrate; forming a catalyst element for promoting a crystallization of silicon in contact therewith; crystallizing the non-monocrystal silicon film by thermal annealing after forming said catalyst element wherein amorphous areas are left between crystals formed in the silicon film; and increasing the crystallinity of the thermally annealed non-monocrystal silicon film by irradiating said silicon film with light to crystallize said amorphous areas remaining after said crystallizing step.
Copyright KISTI. All Rights Reserved.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.