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Directed vapor deposition of electron beam evaporant 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-008/00
출원번호 US-0298614 (1994-08-31)
발명자 / 주소
  • Wadley Haydn N. G. (Keswick VA) Groves James F. (Charlottesville VA)
출원인 / 주소
  • University of Virginia Patent Foundation (Charlottesville VA 02)
인용정보 피인용 횟수 : 59  인용 특허 : 0

초록 ▼

A process for vapor depositing an evaporant onto a substrate is provided which involves: presenting the substrate to a deposition chamber, wherein the deposition chamber has an operating pressure of from 0.001 Torr to atmospheric pressure and has coupled thereto a carrier gas stream generator and an

대표청구항 ▼

A process for vapor depositing an evaporant onto a substrate comprising: presenting the substrate to a deposition chamber, wherein said deposition chamber has an operating pressure of from 0.001 Torr to atmospheric pressure and has coupled thereto a means for providing a carrier gas stream and a mea

이 특허를 인용한 특허 (59)

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  6. Furukawa, Toshiharu; Hakey, Mark C.; Holmes, Steven J.; Horak, David V., Deliberate semiconductor film variation to compensate for radial processing differences, determine optimal device characteristics, or produce small productions.
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  7. Toshiharu Furukawa ; Mark C. Hakey ; Steven J. Holmes ; David V. Horak, Deliberate semiconductor film variation to compensate for radial processing differences, determine optimal device characteristics, or produce small productions.
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  8. Furukawa, Toshiharu; Hakey, Mark C.; Holmes, Steven J.; Horak, David C., Deliberate semiconductor film variation to compensate for radial processing differences, determine optimal device characteristics, or produce small productions runs.
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  9. Neal, James W.; Maloney, Michael J.; Litton, David A.; Masucci, Christopher, Deposition apparatus having thermal hood.
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  10. Stecker, Scott, Electron beam layer manufacturing.
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  23. Forrest, Stephen R.; Burrows, Paul E.; Ban, Vladimir S., Low pressure vapor phase deposition of organic thin films.
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