초록 ▼

A micro-bolometric infrared (IR) staring array is described. The active element in each pixel within a two-dimensional array is a device having a selectively forward-biased p-n junction, e.g. a selectively biased diode. Each diode in the array serves as both an IR energy detecting element and a swit

A micro-bolometric infrared (IR) staring array is described. The active element in each pixel within a two-dimensional array is a device having a selectively forward-biased p-n junction, e.g. a selectively biased diode. Each diode in the array serves as both an IR energy detecting element and a switching element. Each diode in a given row of the IR pixel array to be sensed, or read, is driven at a constant voltage, rendering its IR response highly controllable in the forward biased operating curve of the diodes in the addressed row. Diodes not being driven are, due to their reverse bias, in their off state producing minute leakage current and thus make no significant contribution to the sensed current representing a given pixel\s IR exposure. The row-addressed driven or active diodes are sensed column by column by sample and hold techniques to produce a two-dimensional IR pixel image of a target. This simplifies the geometries as well as the cell structures while increasing the fill ratio to greater than approximately fifty percent. Moreover, manufacturing yields are greatly improved because of the topologic and process simplicities and compatibility with standard integrated circuit processes.

대표청구항 ▼

A two-dimensional bolometric array comprising: plural bolometer devices arranged in a generally planar two-dimensional array across a semiconductor substrate, each bolometer device in said array being characterized as a semiconductor junction that is, by external drive means, normally reverse biased

A two-dimensional bolometric array comprising: plural bolometer devices arranged in a generally planar two-dimensional array across a semiconductor substrate, each bolometer device in said array being characterized as a semiconductor junction that is, by external drive means, normally reverse biased and that is selectively forward biasable at a substantially fixed forward bias voltage produced by external means, said device being exposable to infrared energy incident on said device and said device exhibiting a determinedly variable response to a varying amount of absorbed infrared energy incident upon said device, said device being thermally isolated from said substrate that forms a part of said device, said device having on one side of the junction a drive line for applying a bias thereto and having on another side of the junction a sense line for measuring said device\s response to the amount of infrared energy incident on said device, wherein plural ones of said plural devices share one or more common drive or one or more common sense lines controllable by associated bolometric array drive and sense circuitry.