초록 ▼

The present invention provides a novel sensor preferably used for non-destructive measurement of the electrical characteristics of semiconductors. The sensor is easily manufactured and has a sufficiently high dielectric breakdown strength. The sensor includes an electrode mount 64 having a an electr

The present invention provides a novel sensor preferably used for non-destructive measurement of the electrical characteristics of semiconductors. The sensor is easily manufactured and has a sufficiently high dielectric breakdown strength. The sensor includes an electrode mount 64 having a an electrode pattern 200 formed on a bottom surface 66a of a cone glass 66. The bottom surface 66a has a reflecting plane 66c for reflecting a laser beam, a test electrode 201, and three parallelism adjustor electrodes 111 through 113 formed around the reflecting plane 66c. The bottom surface 66a also has a guard ring 120 disposed between the test electrode 201 and the parallelism adjustor electrodes 111 through 113. An insulating film 68 covers a lower surface of the cone glass 66. Wiring formed on a inclined face 66b of the cone glass 66 is connected to external lead wires at the upper end of the wiring. Since the cone glass 66 has two flat surfaces parallel to each other, the electrode pattern 200 is easily formed on the bottom surface 66a by photo lithography. The insulating film 68 effectively works to improve the dielectric breakdown strength.

대표청구항 ▼

A sensor for use in non-destructive measurement of electrical characteristics of a semiconductor wafer, comprising: a transparent member having a first flat surface and a second flat surface substantially parallel with each other, said first flat surface adapted to be spaced substantially parallel f

A sensor for use in non-destructive measurement of electrical characteristics of a semiconductor wafer, comprising: a transparent member having a first flat surface and a second flat surface substantially parallel with each other, said first flat surface adapted to be spaced substantially parallel from a surface of the semiconductor wafer, said first flat surface having a reflecting plane to reflect a light beam introduced into said transparent member under geometric optical total reflection conditions, said geometric optical total reflection conditions being defined by a non-perpendicular incident angle of said light beam on said reflecting plane and a refractive index of said transparent member, said geometric optical total reflection conditions allowing a part of said light beam incident on said reflecting plane to pass through said reflecting plane by a tunnel effect when said reflecting plane and a surface of said semiconductor wafer are sufficiently close to each other to cause said tunnel effect, said reflected light beam reflected by said reflecting plane being measured to determine a gap between said reflecting plane and said surface of said semiconductor wafer spaced from said reflecting plane; a test electrode formed on said first flat surface; and an insulating film of a predetermined thickness formed at least on said test electrode so that said insulating film enhances electrical breakdown characteristics of said test electrode, said predetermined thickness allowing said part of said light beam incident on said reflecting plane under said geometric optical reflection conditions to pass through said insulating film.