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A method for making a nonvolatile memory device having a field effect transistor for storing information, and a Schottky diode in series with the field effect transistor. The field effect transistor includes source and drain regions in a semiconductor substrate, with a channel region interposed betw

A method for making a nonvolatile memory device having a field effect transistor for storing information, and a Schottky diode in series with the field effect transistor. The field effect transistor includes source and drain regions in a semiconductor substrate, with a channel region interposed between them and a gate electrode above the channel region. A ferroelectric gate film is sandwiched between the channel region and the gate electrode. In the method, a conductive barrier meterial is deposited in contact with the source region of the field effect transistor to make the Schottky diode. In reading information from the memory device, voltage is applied to a serial circuit consisting of the field effect transistor and the Schottky diode to turn the Schottky diode on.

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A method of manufacturing a nonvolatile memory device, comprising the steps of: forming a ferroelectric gate insulating film on a semiconductor substrate; forming a gate electrode on said ferroelectric gate insulating film; forming first and second impurity regions in said semiconductor substrate wi

A method of manufacturing a nonvolatile memory device, comprising the steps of: forming a ferroelectric gate insulating film on a semiconductor substrate; forming a gate electrode on said ferroelectric gate insulating film; forming first and second impurity regions in said semiconductor substrate with said gate electrode interposed therebetween to define a region between the first and second impurity regions as a channel region; and forming conductive barrier material in contact with the first impurity region so as to make a Schottky diode.