초록 ▼

A gaseous process for removing and vaporizing at least a portion of a silicon oxide film from between a substrate and a superstructure leaving a space between the substrate and the superstructure. The silicon oxide layer is removed in two steps. In the first step the bulk of the silicon oxide layer

A gaseous process for removing and vaporizing at least a portion of a silicon oxide film from between a substrate and a superstructure leaving a space between the substrate and the superstructure. The silicon oxide layer is removed in two steps. In the first step the bulk of the silicon oxide layer is removed by a rapid liquid or gaseous etching process, leaving at least a portion of the silicon oxide layer directly underlying the superstructure in place so as to support the superstructure during a wash cycle. In the second silicon oxide removal step the substrate is introduced to a high flow rate gaseous environment containing a relatively high concentration of anhydrous HF to which no, or only a relatively very low amount of, additional water vapor is provided until the silicon oxide directly underlying the superstructure has been removed.

대표청구항 ▼

A manufacturing process for producing a three dimensional structure on a substrate, in which said structure has been built up of silicon on the substrate, with at least a portion of the structure overlying and supported by a layer of a silicon oxide on the substrate, the process comprising removing

A manufacturing process for producing a three dimensional structure on a substrate, in which said structure has been built up of silicon on the substrate, with at least a portion of the structure overlying and supported by a layer of a silicon oxide on the substrate, the process comprising removing the silicon oxide layer in two steps, the first step comprising removing the bulk of the silicon oxide layer by a rapid liquid or gaseous etching process, leaving at least a portion of the silicon oxide layer directly underlying the structure in place so as to support the structure during a wash cycle, and the second silicon oxide removal step comprising introducing the substrate to a high flow rate gaseous environment containing anhydrous HF, said flow rate being at least about 20 liters/min, to which substantially no water is provided until the silicon oxide directly underlying the structure has been removed.