초록 ▼

A buffer layer having crystal orientation in a (111) face is formed on a semiconductor single-crystal (100) substrate and a ferroelectric thin film having crystal orientation in a (111) or (0001) face is then formed over the buffer layer. The buffer layer is preferably formed of MgO at a temperature

A buffer layer having crystal orientation in a (111) face is formed on a semiconductor single-crystal (100) substrate and a ferroelectric thin film having crystal orientation in a (111) or (0001) face is then formed over the buffer layer. The buffer layer is preferably formed of MgO at a temperature ranging from 20 to 600°C. and at a rate ranging from 0.5 to 50 Å/sec. The thus formed ferroelectric thin film has its axes of polarization aligned in one direction. Using the oriented ferroelectric thin-film device, highly functional nonvolatile memories, capacitors or optical modulators can be fabricated on semiconductor substrates.

대표청구항 ▼

An oriented ferroelectric thin film element comprising: a semiconductor single crystal (100) substrate; a buffer layer having a crystal orientation of (111) and random in-plane directions, said buffer layer being provided on said semiconductor single-crystal substrate; and a ferroelectric thin film

An oriented ferroelectric thin film element comprising: a semiconductor single crystal (100) substrate; a buffer layer having a crystal orientation of (111) and random in-plane directions, said buffer layer being provided on said semiconductor single-crystal substrate; and a ferroelectric thin film having a crystal orientation of one of (111) and (0001), said ferroelectric thin film being provided on said buffer layer.