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Single substrate vacuum processing apparatus having improved exhaust system 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/00
출원번호 US-0277865 (1994-04-14)
발명자 / 주소
  • White John M. (Hayward CA)
출원인 / 주소
  • Applied Materials, Inc. (Santa Clara CA 02)
인용정보 피인용 횟수 : 83  인용 특허 : 0

초록

In a single substrate vacuum processing chamber for processing large glass substrates, a novel vacuum exhaust system is built into the lid of the chamber. A plenum chamber which is connected to a continuous vacuum pump is mounted around a gas dispersion plate, also built into the lid, and has contin

대표청구항

A vacuum processing chamber comprising a) a lid portion having a gas dispersion plate and a vacuum exhaust system therein; b) a chamber body comprising a support for a substrate to be processed; and c) a processing region formed between said gas dispersion plate and said support when said lid portio

이 특허를 인용한 특허 (83)

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  77. Keller, Ernst; Shang, Quanyuan, Suspended gas distribution manifold for plasma chamber.
  78. White,John M.; Keller,Ernst; Blonigan,Wendell T., Suspended gas distribution plate.
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