초록 ▼

A process for creating a polysilicon contact stud, to connect overlying metallizations, to underlying active device regions in a semiconductor substrate, has been developed. After filling a contact hole with insitu doped polysilicon, and overlying with a titanium film, an anneal cycle is performed t

A process for creating a polysilicon contact stud, to connect overlying metallizations, to underlying active device regions in a semiconductor substrate, has been developed. After filling a contact hole with insitu doped polysilicon, and overlying with a titanium film, an anneal cycle is performed to convert the unwanted portions of polysilicon to titanium silicide. The silicide is then selectively removed, leaving polysilicon only in the contact hole, thus resulting in the desired stud configuration.

대표청구항 ▼

A method for fabricating a MOSFET device on a semiconductor substrate, using a conductive stud to provide electrical contact between active device elements in the substrate, and an overlying interconnect metallization, comprising the steps of: providing the active device elements in the said semicon

A method for fabricating a MOSFET device on a semiconductor substrate, using a conductive stud to provide electrical contact between active device elements in the substrate, and an overlying interconnect metallization, comprising the steps of: providing the active device elements in the said semiconductor substrate; depositing a first dielectric layer on said semiconductor substrate, that includes said active device elements; depositing a second dielectric layer on said first dielectric layer, to form composite dielectric layer; photolithographic processing to open a region in a photoresist layer, exposing an area of said composite dielectric layer, directly overlying said active device element; anisotropic removal of said composite dielectric layer, in said exposed region of said photoresist layer, to create contact hole opening to said active device element; cleaning the surface of said active device element, in said contact hole opening; depositing an insitu doped polysilicon layer on the surface of said active device element, in said contact hole opening, and on the surface of said second dielectric layer; depositing a layer of titanium on said insitu doped polysilicon layer; annealing to completely convert a portion of said insitu doped polysilicon layer to a titanium silicide layer, on the surface of said second dielectric layer, while converting only a top portion of said insitu doped polysilicon layer, in said contact hole opening, to titanium silicide; removal of said titanium silicide from the surface of said second dielectric layer, and from the surface of said unconverted insitu doped polysilicon, in said contact hole; and removal of said second dielectric layer from the surface of said first dielectric layer.