초록 ▼

A substance containing a catalyst element is formed so as to closely contact with an amorphous silicon film, or a catalyst element is introduced into the amorphous silicon film. The amorphous silicon film is annealed at a temperature which is lower than a crystallization temperature of usual amorpho

A substance containing a catalyst element is formed so as to closely contact with an amorphous silicon film, or a catalyst element is introduced into the amorphous silicon film. The amorphous silicon film is annealed at a temperature which is lower than a crystallization temperature of usual amorphous silicon, thereby selectively crystallizing the amorphous silicon film. The crystallized region is used as a crystalline silicon TFT which can be used in a peripheral driver circuit of an active matrix circuit. The region which remains amorphous is used as an amorphous silicon TFT which can be used in a pixel circuit. A relatively small amount of a catalyst element for promoting crystallization is added to an amorphous silicon film, and an annealing process is conducted at a temperature which is lower than the distortion temperature of a substrate, thereby crystallizing the amorphous silicon film. A gate insulating film, and a gate electrode are then formed, and an impurity is implanted in a self-alignment manner. A film containing a catalyst element for promoting crystallization is closely contacted with the impurity region, or a relatively large amount of a catalyst element is introduced into the impurity region by an ion implantation or the like. Then, an annealing process is conducted at a temperature which is lower than the distortion temperature of the substrate, thereby activating the doping impurity.

대표청구항 ▼

A method of forming a transistor comprising: forming on a substrate a semiconductor film comprising silicon; adding a catalyst element for promoting crystallization, to said semiconductor film; annealing the semiconductor film at a first temperature to crystallize it using the catalyst element; form

A method of forming a transistor comprising: forming on a substrate a semiconductor film comprising silicon; adding a catalyst element for promoting crystallization, to said semiconductor film; annealing the semiconductor film at a first temperature to crystallize it using the catalyst element; forming a gate electrode on said semiconductor film; introducing a doping impurity into a portion of said semiconductor film with said gate electrode as a mask; forming a substance containing a catalyst element in contact with the portion of said semiconductor film; and annealing said semiconductor film at a second temperature lower than the first temperature to crystallize the portion of the semiconductor film and to activate said introduced impurity.