초록 ▼

A silicon oxide film is formed on a silicon substrate with a diffusion layer, and a contact hole is formed in the silicon oxide film. A protective film made of an oxide film and a nitride film is formed over the whole surface of the substrate, and the contact hole is buried with a BPSG film. Another

A silicon oxide film is formed on a silicon substrate with a diffusion layer, and a contact hole is formed in the silicon oxide film. A protective film made of an oxide film and a nitride film is formed over the whole surface of the substrate, and the contact hole is buried with a BPSG film. Another silicon oxide film is deposited over the substrate and an interconnection trench is formed in this silicon oxide film. After the BPSG film is removed, a TiN/Ti film is formed over the whole surface of the substrate. A Cu film is grown by MO-CVD, and thereafter the Cu film and TiN/Ti film on the surface of the substrate are partially removed by CMP. A highly reliable contact plug and a trench burying higher level interconnection are formed even where contacts are margin-less or where alignment errors are present.

대표청구항 ▼

A method for fabricating a semiconductor device comprising the steps of: a) forming a first insulating film covering one of a diffusion layer formed in a surface region of a semiconductor substrate and a lower level interconnection layer formed over the semiconductor substrate; b) forming an opening

A method for fabricating a semiconductor device comprising the steps of: a) forming a first insulating film covering one of a diffusion layer formed in a surface region of a semiconductor substrate and a lower level interconnection layer formed over the semiconductor substrate; b) forming an opening in said first insulating film, one of said opening exposing a surface of said diffusion layer and said lower level interconnection layer; c) forming a protective film covering an inside of said opening and a surface of said first insulating film; d) forming a planar film by burying a material in said opening, said material capable of being selectively removed relative to said protective film; e) forming a second insulating film covering said planar film and said first insulating film; f) forming an interconnection trench by selectively etching said second insulating film, said interconnection trench exposing a surface of said planar film; g) removing said planar film; h) exposing the surface of one of said diffusion layer and said lower level interconnection by removing said protective film at least at a bottom area of said opening; and i) forming a conductive film burying said opening and said interconnection trench.