이 특허를 인용한 특허 (237)

1. Muilenburg, Michael J.; Kim, Chong-Yong J.; Fizel, Jerry J.; Webb, Richard J.; Gagliardi, John J.; Pendergrass, Jr., Daniel B.; Streifel, Robert J.; Bruxvoort, Wesley J., Abrasive article having a window system for polishing wafers, and methods.

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2. Muilenburg, Michael J.; Kim, Chong-Yong J.; Fizel, Jerry J.; Webb, Richard J.; Gagliardi, John J.; Pendergrass, Jr., Daniel B.; Streifel, Robert J.; Bruxvoort, Wesley J., Abrasive article having a window system for polishing wafers, and methods.

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3. Manoocher Birang ; Boguslaw Swedek, Adaptive endpoint detection for chemical mechanical polishing.

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4. Talieh, Homayoun; Basol, Bulent M., Advanced chemical mechanical polishing system with smart endpoint detection.

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5. Talieh,Homayoun; Basol,Bulent M., Advanced chemical mechanical polishing system with smart endpoint detection.

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6. Fishkin Boris ; Brown Kyle A., Aerosol substrate cleaner.

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7. Birang, Manoocher; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.

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8. Birang, Manoocher; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.

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9. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.

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10. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.

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11. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.

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12. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.

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13. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for semiconductor processing operations.

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14. Nikoonahad, Mehrdad; Sethuraman, Anantha R.; Zhao, Guoheng, Apparatus and methods for detecting killer particles during chemical mechanical polishing.

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15. Tang, Wallace T. Y., Apparatus for detection of thin films during chemical/mechanical polishing planarization.

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16. Tietz,James V.; Li,Shijian; Birang,Manoocher; White,John M.; Rosenberg, legal representative,Sandra L.; Scales,Marty; Emami,Ramin; Rosenberg, deceased,Lawrence M., Article for polishing semiconductor substrates.

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17. Scott, Diane B.; Baker, III, Arthur Richard; Zhang, Tao, Base-pad for a polishing pad.

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18. Bajaj, Rajeev; Krishnan, Kasiraman; Orilall, Mahendra C.; Redfield, Daniel; Redeker, Fred C.; Patibandla, Nag B.; Menk, Gregory E.; Fung, Jason G.; Perry, Russell Edward; Davenport, Robert E., CMP pad construction with composite material properties using additive manufacturing processes.

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19. Manning, Monis J., CMP pad with composite transparent window.

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20. Prasad, Abaneshwar, CMP pad with composite transparent window.

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21. Allison, William; Huang, Ping; Scott, Diane; Frentzel, Richard; Kerprich, Robert, CMP pad with local area transparency.

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22. Tolles Robert D. ; Mear Steven T. ; Prabhu Gopalakrishna B. ; Zuniga Steven ; Chen Hung, CMP polishing pad.

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23. Tolles, Robert D.; Mear, Steven T.; Prabhu, Gopalakrishna B.; Zuniga, Steven; Chen, Hung, CMP polishing pad.

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24. Lacy, Michael S.; Boyd, John M., Chemical mechanical planarization belt assembly and method of assembly.

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25. Wang, Yuchun; Frey, Bernard M.; Basol, Bulent M.; Young, Douglas W.; Talieh, Homayoun; Velazquez, Efrain, Chemical mechanical polishing endpoint detection.

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26. Tran,Joe G.; Kaneshige,Chad J.; Kirkpatrick,Brian K., Chemical mechanical polishing method and apparatus.

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27. Redeker, Fred C.; Bajaj, Rajeev, Chemical mechanical polishing of a metal layer with polishing rate monitoring.

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28. Redeker, Fred C.; Bajaj, Rajeev, Chemical mechanical polishing of a metal layer with polishing rate monitoring.

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29. Donohue,Timothy James; Balagani,Venkata R.; Beau de Lomenie,Romain, Chemical mechanical polishing pad for controlling polishing slurry distribution.

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30. Kulp, Mary Jo; Williams, Shannon Holly, Chemical mechanical polishing pad having a low defect integral window.

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31. Kulp, Mary Jo; Williams, Shannon H, Chemical mechanical polishing pad having a low defect window.

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32. Kulp, Mary Jo; String, Darrell, Chemical mechanical polishing pad having integral identification feature.

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33. Kulp, Mary Jo; Simon, Ethan S.; String, Darrell, Chemical mechanical polishing pad having window with integral identification feature.

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34. Loyack, Adam; Nakatani, Alan; Kulp, Mary Jo; Kelly, David G., Chemical mechanical polishing pad with light stable polymeric endpoint detection window and method of polishing therewith.

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35. Lefevre, Paul; Hsu, Oscar K.; Wells, David Adam; Aldeborgh, John Erik; Jin, Marc C., Chemical-mechanical planarization pad having end point detection window.

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36. Johansson, Nils; Swedek, Boguslaw A.; Birang, Manoocher, Combined eddy current sensing and optical monitoring for chemical mechanical polishing.

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37. Johansson,Nils; Swedek,Boguslaw A.; Birang,Manoocher, Combined eddy current sensing and optical monitoring for chemical mechanical polishing.

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38. Loyack, Adam; Nakatani, Alan; Kulp, Mary Jo; Kelly, David G., Creep-resistant polishing pad window.

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39. Misra, Sudhanshu; Roy, Pradip K., Customized polish pads for chemical mechanical planarization.

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40. Roy, Pradip K.; Deopura, Manish; Misra, Sudhanshu, Customized polishing pads for CMP and methods of fabrication and use thereof.

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41. Roy, Pradip K.; Deopura, Manish; Misra, Sudhanshu, Customized polishing pads for CMP and methods of fabrication and use thereof.

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42. Roy, Pradip K.; Deopura, Manish; Misra, Sudhanshu, Customized polishing pads for CMP and methods of fabrication and use thereof.

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43. Roy, Pradip K; Deopura, Manish; Misra, Sudhanshu, Customized polishing pads for CMP and methods of fabrication and use thereof.

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44. David,Jeffrey Drue; Johansson,Nils; Birang,Manoocher; Swedek,Boguslaw A.; Carlsson,Ingemar, Determination of position of sensor measurements during polishing.

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45. Sarfaty,Moshe; Sreenivasan,Ramaswamy; Nulman,Jaim, Eddy-optic sensor for object inspection.

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46. Eppert, Jr., Stanley E.; Manzonie, Adam; Freeman, Peter W.; Langlois, Elizabeth A., Eliminating air pockets under a polished pad.

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47. Desai, Mukesh; Wang, Yuchun; Velazquez, Efrain, Endpoint detection for non-transparent polishing member.

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48. Swedek Boguslaw ; Wiswesser Andreas Norbert,DEX, Endpoint detection with light beams of different wavelengths.

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49. Swedek, Boguslaw; Wiswesser, Andreas Norbert, Endpoint detection with light beams of different wavelengths.

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50. Wiswesser,Andreas Norbert; Schoenleber,Walter, Endpoint detection with multiple light beams.

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51. Tsai Stan ; Redeker Fred C. ; Wijekoon Kapila, Endpoint monitoring with polishing rate change.

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52. Lombardo, Brian, Foam semiconductor polishing belts and pads.

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53. Birang Manoocher ; Gleason Allan ; Guthrie William L., Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus.

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54. Birang Manoocher ; Gleason Allan ; Guthrie William L., Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus.

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55. Birang,Manoocher; Gleason,Allan; Guthrie,William L., Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus.

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56. Lombardo, Brian; Otto, Jeffrey P., Froth and method of producing froth.

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57. Osterheld, Thomas H., Grid relief in CMP polishing pad to accurately measure pad wear, pad profile and pad wear profile.

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58. James, David B.; Vishwanathan, Arun; Cook, Lee Melbourne; Burke, Peter A.; Shidner, David; So, Joseph K.; Roberts, John V. H., Grooved polishing pads for chemical mechanical planarization.

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59. Allison, William C.; Scott, Diane; Huang, Ping; Frentzel, Richard; Simpson, Alexander William, Homogeneous polishing pad for eddy current end-point detection.

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60. James, David B.; Vishwanathan, Arun; Cook, Lee Melbourne; Burke, Peter A.; Shidner, David; So, Joseph K.; Roberts, John V. H., Hydrolytically stable grooved polishing pads for chemical mechanical planarization.

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61. John A. Adams ; Robert A. Eaton ; John C. Ptak, Hydrophobic optical endpoint light pipes for chemical mechanical polishing.

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62. Chen, Haiguang; Lee, Shing, In-situ end point detection for semiconductor wafer polishing.

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63. Redeker Fred C. ; Birang Manoocher ; Li Shijian ; Somekh Sasson, In-situ monitoring of linear substrate polishing operations.

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64. Redeker, Fred C.; Birang, Manoocher; Li, Shijian; Somekh, Sasson, In-situ monitoring of linear substrate polishing operations.

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65. Tang, Wallace T. Y., In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization.

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66. Tang,Wallace T. Y., In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization.

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67. Tang, Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.

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68. Tang,Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.

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69. Huh,Hyun; Lee,Sang Mok; Song,Kee Cheon; Kim,Seung geun; Son,Do Kwon, Integral polishing pad and manufacturing method thereof.

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70. Swedek, Boguslaw A.; Birang, Manoocher; Johansson, Nils, Integrated endpoint detection system with optical and eddy current monitoring.

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71. Swedek, Boguslaw A; Birang, Manoocher; Johansson, Nils, Integrated endpoint detection system with optical and eddy current monitoring.

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72. Swedek,Boguslaw A.; Birang,Manoocher; Johansson,Nils, Integrated endpoint detection system with optical and eddy current monitoring.

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73. Pant Anil K. ; Jairath Rahul ; Mishra Kamal ; Chadda Saket ; Krusell Wilbur C., Integrated pad and belt for chemical mechanical polishing.

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74. Pant, Anil K.; Jairath, Rahul; Mishra, Kamal; Chadda, Saket; Krusell, Wilbur C., Integrated pad and belt for chemical mechanical polishing.

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75. Benvegnu,Dominic J., Iso-reflectance wavelengths.

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76. Dunton Samuel Vance ; Xiong Yizhi, Laser interferometry endpoint detection with windowless polishing pad for chemical mechanical polishing process.

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77. Dunton, Samuel Vance; Xiong, Yizhi, Laser interferometry endpoint detection with windowless polishing pad for chemical mechanical polishing process.

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78. Redeker, Fred C.; Birang, Manoocher; Li, Shijian; Somekh, Sasson, Linear polishing sheet with window.

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79. Redeker,Fred C.; Birang,Manoocher; Li,Shijian; Somekh,Sasson, Linear polishing sheet with window.

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80. Tolles, Robert D., Material for use in carrier and polishing pads.

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81. Osterheld Thomas H. ; Chen Hung Chih ; Rondum Erik, Method and apparatus for chemical mechanical polishing using a patterned pad.

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82. Wiswesser Andreas Norbert,DEX ; Pan Judon Tony ; Swedek Boguslaw, Method and apparatus for detecting an end-point in chemical mechanical polishing of metal layers.

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83. Wiswesser, Andreas Norbert; Pan, Judon Tony; Swedek, Boguslaw, Method and apparatus for detecting an end-point in chemical mechanical polishing of metal layers.

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84. Wiswesser, Andreas Norbert; Pan, Judon Tony; Swedek, Boguslaw, Method and apparatus for detecting an end-point in chemical mechanical polishing of metal layers.

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85. Manoocher Birang ; Boguslaw Swedek ; Nils Johansson, Method and apparatus for detecting polishing endpoint with optical monitoring.

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86. Wiswesser,Andreas Norbert; Schoenleber,Walter; Swedek,Boguslaw; Birang,Manoocher, Method and apparatus for determining polishing endpoint with multiple light sources.

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87. Wiswesser Andreas Norbert,DEX ; Schoenleber Walter,DEX ; Swedek Boguslaw ; Birang Manoocher, Method and apparatus for determining substrate layer thickness during chemical mechanical polishing.

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88. Parikh, Prabodh J., Method and apparatus for endpoint detection during chemical mechanical polishing.

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89. Boyd, John M.; Lacy, Michael S., Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool.

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90. Boyd, John M.; Lacy, Michael S., Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool.

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91. John M. Boyd ; Michael S. Lacy, Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool.

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92. Jairath Rahul ; Pecen Jiri ; Chadda Saket ; Krusell Wilbur C. ; Cutini Jerauld J. ; Engdahl Erik H., Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher.

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93. Jairath Rahul ; Pecen Jiri ; Chadda Saket ; Krusell Wilbur C. ; Cutini Jerauld J. ; Engdahl Erik H., Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher.

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94. Pecen Jiri ; Chadda Saket ; Jairath Rahul ; Krusell Wilbur C., Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing.

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95. Pecen, Jiri; Chadda, Saket; Jairath, Rahul; Krusell, Wilbur C., Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing.

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96. Pecen Jiri ; Fielden John ; Chadda Saket ; LaComb ; Jr. Lloyd J. ; Jairath Rahul ; Krusell Wilbur C., Method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer during chemical-mechanical polishing.

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97. Robinson Karl M., Method and apparatus for increasing chemical-mechanical-polishing selectivity.

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98. Robinson, Karl M., Method and apparatus for increasing chemical-mechanical-polishing selectivity.

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99. Robinson Karl M., Method and apparatus for increasing-chemical-polishing selectivity.

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100. Andreas Norbert Wiswesser DE; Wallter Waiter Schoenleber DE; Boguslaw Swedek, Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing.

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101. Wiswesser Andreas Norbert,DEX ; Schoenleber Walter,DEX ; Swedek Boguslaw, Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing.

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102. Wiswesser, Andreas Norbert; Schoenleber, Walter; Swedek, Boguslaw, Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing.

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103. Wiswesser, Andreas Norbert; Schoenleber, Walter; Swedek, Boguslaw, Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing.

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104. Wiswesser Andreas Norbert,DEX ; Pan Judon Tony ; Swedek Boguslaw ; Birang Manoocher, Method and apparatus for optical monitoring in chemical mechanical polishing.

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105. Wiswesser, Andreas Norbert; Pan, Judon Tony; Swedek, Buguslaw; Birang, Manoocher, Method and apparatus for optical monitoring in chemical mechanical polishing.

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106. Birang, Manoocher; Swedek, Boguslaw A.; Kim, Hyeong Cheol, Method and apparatus of eddy current monitoring for chemical mechanical polishing.

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107. Birang,Manoocher; Swedek,Boguslaw A.; Kim,Hyeong Cheol, Method and apparatus of eddy current monitoring for chemical mechanical polishing.

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108. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Method for in-situ endpoint detection for chemical mechanical polishing operations.

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109. Jones, Jeremy; Sevilla, Roland K., Method for manufacturing a polishing pad having a compressed translucent region.

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110. Prasad,Abaneshwar, Method for manufacturing microporous CMP materials having controlled pore size.

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111. Fukuda, Takeshi; Watanabe, Tsuguo; Hirose, Junji; Nakamura, Kenji; Doura, Masato, Method for manufacturing polishing pad.

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112. Fukuda, Takeshi; Watanabe, Tsuguo; Hirose, Junji; Nakamura, Kenji; Doura, Masato, Method for manufacturing polishing pad.

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113. Wiswesser,Andreas Norbert; Schoenleber,Walter; Swedek,Boguslaw, Method for monitoring a substrate during chemical mechanical polishing.

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114. Shih, Wen-Chang; Chang, Yung-Chung; Chu, Min-Kuei; Wei, Lung-Chen, Method of fabricating polishing pad having detection window thereon.

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115. Shih,Wen Chang; Chang,Yung Chung; Chu,Min Kuei; Wei,Lung Chen, Method of fabricating polishing pad having detection window thereon.

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116. Boldizar,Mark J.; Gamble,Robert T.; Hedrick,Vincent Matthew; Lawhorn,Jason M.; Saikin,Alan H.; Tome,Katherine L., Method of forming a layered polishing pad.

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117. Swedek,Boguslaw A.; Birang,Manoocher, Method of forming a polishing pad for endpoint detection.

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118. David,Kyle W.; Gamble,Robert T.; Haschak,Leslie A.; Lamborn, III,George E.; Lawhorn,Jason M.; Roberts,John V. H., Method of forming a polishing pad with reduced stress window.

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119. Birang Manoocher ; Gleason Allan ; Guthrie William L., Method of forming a transparent window in a polishing pad.

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120. Birang, Manoocher; Gleason, Allan; Guthrie, William L., Method of forming a transparent window in a polishing pad.

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121. Lefevre, Paul; Hsu, Oscar K.; Wells, David Adam; Aldeborgh, John Erik; Jin, Marc C.; Wu, Guangwei; Mathew, Anoop, Method of grooving a chemical-mechanical planarization pad.

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122. Wiswesser, Andreas Norbert; Oshana, Ramiel; Hughes, Kerry F.; Rohde, Jay; Huo, David Datong; Benvegnu, Dominic J., Method of making and apparatus having polishing pad with window.

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123. Lehman,Kurt; Chen,Charles; Allen,Ronald L.; Shinagawa,Robert; Sethuraman,Anantha; Bevis,Christopher F.; Trikas,Thanassis; Chen,Haiguang; Meng,Ching Ling, Methods and systems for detecting a presence of blobs on a specimen during a polishing process.

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124. Lehman,Kurt; Chen,Charles; Allen,Ronald L.; Shinagawa,Robert; Sethuraman,Anantha; Bevis,Christopher F.; Trikas,Thanassis; Chen,Haiguang; Meng,Ching Ling, Methods and systems for determining a characteristic of polishing within a zone on a specimen from combined output signals of an eddy current device.

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125. Levy, Ady; Brown, Kyle A.; Smedt, Rodney; Bultman, Gary; Nikoonahad, Mehrdad; Wack, Dan; Fielden, John; Abdul-Halim, Ibrahim, Methods and systems for determining a critical dimension and overlay of a specimen.

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126. Levy, Ady; Brown, Kyle A.; Smedt, Rodney; Bultman, Gary; Nikoonahad, Mehrdad; Wack, Dan; Fielden, John; Abdul-Halim, Ibrahim, Methods and systems for determining a critical dimension and overlay of a specimen.

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127. Levy, Ady; Brown, Kyle A.; Smedt, Rodney; Bultman, Gary; Nikoonahad, Mehrdad; Wack, Dan; Fielden, John; Abdulhalim, Ibrahim, Methods and systems for determining a critical dimension and overlay of a specimen.

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128. Bultman,Gary; Levy,Ady; Brown,Kyle A.; Nikoonahad,Mehrdad; Wack,Dan; Fielden,John, Methods and systems for determining a presence of macro and micro defects on a specimen.

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129. Wack,Dan; Levy,Ady; Brown,Kyle A.; Bultman,Gary; Nikoonahad,Mehrdad; Fielden,John, Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography.

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130. Levy,Ady; Brown,Kyle A.; Nikoonahad,Mehrdad; Bultman,Gary; Wack,Dan; Fielden,John, Methods and systems for determining overlay and flatness of a specimen.

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131. Lehman, Kurt; Chen, Charles; Allen, Ronald L.; Shinagawa, Robert; Sethuraman, Anantha; Bevis, Christopher F.; Trikas, Thanassis; Chen, Haiguang; Meng, Ching Ling, Methods and systems for generating a two-dimensional map of a characteristic at relative or absolute locations of measurement spots on a specimen during polishing.

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132. Lehman, Kurt; Chen, Charles; Allen, Ronald L.; Shinagawa, Robert; Sethuraman, Anantha; Bevis, Christopher F.; Trikas, Thanassis; Chen, Haiguang; Meng, Ching Ling, Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, or a characteristic of a polishing pad or tool.

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133. Lehman, Kurt; Chen, Charles; Allen, Ronald L.; Shinagawa, Robert; Sethuraman, Anantha; Bevis, Christopher F.; Trikas, Thanassis; Chen, Haiguang; Meng, Ching Ling, Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, or a characteristic of a polishing pad or tool.

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134. Lehman,Kurt; Chen,Charles; Allen,Ronald L.; Shinagawa,Robert; Sethuraman,Anantha; Bevis,Christopher F.; Trikas,Thanassis; Chen,Haiguang; Meng,Ching Ling, Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, or a characteristic of a polishing pad or tool.

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135. Lehman,Kurt; Chen,Charles; Allen,Ronald L.; Shinagawa,Robert; Sethuraman,Anantha; Bevis,Christopher F.; Trikas,Thanassis; Chen,Haiguang; Meng,Ching Ling, Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, or a characteristic of a polishing pad or tool.

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136. Allen Robert F. ; Holzapfel Paul ; Bartels Anthony L. ; Lin Warren, Methods for the in-process detection of workpieces in a CMP environment.

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137. Bartels Anthony L. ; Allen Robert F. ; Holzapfel Paul ; Lin Warren, Methods for the in-process detection of workpieces with a monochromatic light source.

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138. Prasad, Abaneshwar, Microporous polishing pads.

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139. Prasad, Abaneshwar, Microporous polishing pads.

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140. Prasad, Abaneshwar, Microporous polishing pads.

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141. Prasad, Abaneshwar, Microporous polishing pads.

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142. Roberts John V. H. ; Pinheiro Barry Scott ; James David B., Molded polishing pad having integral window.

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143. John V. H. Roberts ; Barry Scott Pinheiro ; David B. James, Molding a polishing pad having integral window.

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144. Shiozawa Hajime,JPX, Mounting member for polishing.

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145. Duboust, Alain; Chang, Shou-Sung; Lu, Wei; Neo, Siew; Wang, Yan; Manens, Antoine P.; Moon, Yongsik, Multi-layer polishing pad for low-pressure polishing.

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146. Prasad, Abaneshwar; Sevilla, Roland K.; Lacy, Michael S., Multi-layer polishing pad material for CMP.

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147. Prasad,Abaneshwar; Lacy,Michael S., Multi-layer polishing pad material for CMP.

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148. Tolles, Robert D., Multilayer polishing pad and method of making.

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149. Adams, Bret W.; Swedek, Boguslaw A.; Bajaj, Rajeev; Nanjangud, Savitha; Wiswesser, Andreas Norbert; Tsai, Stan D.; Chan, David A.; Redeker, Fred C.; Birang, Manoocher, Optical monitoring in a two-step chemical mechanical polishing process.

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150. Adams, Bret W.; Swedek, Boguslaw A.; Bajaj, Rajeev; Nanjangud, Savitha; Wiswesser, Andreas Norbert; Tsai, Stan D.; Chan, David A.; Redeker, Fred C.; Birang, Manoocher, Optical monitoring in a two-step chemical mechanical polishing process.

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151. Randolph E. Treur ; John M. Boyd ; Stephan H. Wolf, Optical view port for chemical mechanical planarization endpoint detection.

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152. Treur Randolph E. ; Boyd John M. ; Wolf Stephan H., Optical view port for chemical mechanical planarization endpoint detection.

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153. Takahashi, Shogo; Shimizu, Hajime, Perforated-transparent polishing pad.

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154. Schultz,Stephen C.; Herb,John D.; Marquardt,Dave, Platen and manifold for polishing workpieces.

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155. Ohta,Shinro; Shimizu,Kazuo, Polishing apparatus and polishing pad.

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156. Bunyan,Michael H.; Clement,Thomas A.; Hannafin,John J.; LaRosee,Marc E.; Young,Kent M., Polishing article for electro-chemical mechanical polishing.

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157. Menk, Gregory E.; McReynolds, Peter; Rondum, Erik S.; Iyer, Anand N.; Prabhu, Gopalakrishna B.; Leung, Garlen C., Polishing article with integrated window stripe.

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158. Menk, Gregory E.; McReynolds, Peter; Rondum, Erik S.; Iyer, Anand N.; Prabhu, Gopalakrishna B.; Leung, Garlen C., Polishing article with integrated window stripe.

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159. Birang,Manoocher; Gleason,Allan; Guthrie,William L., Polishing assembly with a window.

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160. Ishikawa, Akira; Senga, Tatsuya, Polishing body, polisher, polishing method, and method for producing semiconductor device.

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161. Akira Ihsikawa JP; Tatsuya Senga JP; Akira Miyaji JP; Yoshijiro Ushio JP, Polishing body, polishing apparatus, polishing apparatus adjustment method, polished film thickness or polishing endpoint measurement method, and semiconductor device manufacturing method.

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162. Fukuda, Takeshi; Hirose, Junji; Nakai, Yoshiyuki; Kimura, Tsuyoshi, Polishing pad.

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163. Ogawa, Kazuyuki; Kazuno, Atsushi; Kimura, Tsuyoshi; Shimomura, Tetsuo, Polishing pad.

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164. Vangsness, Jean; Hsu, Oscar Kai Chi; Potnis, Alaka, Polishing pad.

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165. Vangsness,Jean; Hsu,Oscar Kai Chi; Potnis,Alaka, Polishing pad.

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166. Vangsness,Jean; Hsu,Oscar Kai Chi; Potnis,Alaka, Polishing pad.

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167. Ohno,Hisatomo; Izumi,Toshihiro; Saito,Mitsuru; Nagamine,Takuya; Miller,Claughton; Kodaka,Ichiro, Polishing pad and method of producing same.

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168. Koike, Hisao; Arai, Takeshi; Ikeda, Akihiko, Polishing pad and polisher.

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169. Shiro, Kuniyasu; Honda, Tomoyuki; Hanamoto, Miyuki, Polishing pad and polishing apparatus.

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170. Newell, Kelly J., Polishing pad comprising a filled translucent region.

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171. Prasad,Abaneshwar, Polishing pad comprising hydrophobic region and endpoint detection port.

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172. Anjur Sriram P. ; Downing William C., Polishing pad for a semiconductor substrate.

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173. Allison, William C.; Scott, Diane; Huang, Ping; Frentzel, Richard; Simpson, Alexander William, Polishing pad for eddy current end-point detection.

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174. Swedek, Boguslaw A.; Birang, Manoocher, Polishing pad for endpoint detection and related methods.

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175. Swedek, Boguslaw A.; Birang, Manoocher, Polishing pad for endpoint detection and related methods.

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176. Birang, Manoocher; Gleason, Allan, Polishing pad for in-situ endpoint detection.

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177. Cooper, Richard D.; Fathauer, Paul; Mroczek-Petroski, Angela; Perry, David; Petroski, James J., Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same.

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178. Petroski,Angela; Cooper,Richard D.; Fathauer,Paul; Yesnik,Marc Andrew, Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same.

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179. Petroski, Angela; Cooper, Richard D.; Fathauer, Paul; Yesnik, Marc Andrew, Polishing pad for use in chemical?mechanical planarization of semiconductor wafers and method of making same.

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180. Crkvenac,T. Todd; Gamble,Robert T.; Lawhorn,Jason M., Polishing pad having a pressure relief channel.

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181. Doura, Masato; Hirose, Junji; Nakamura, Kenji; Fukuda, Takeshi; Sato, Akinori, Polishing pad manufacturing method.

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182. Aiyer Arun A., Polishing pad thinning to optically access a semiconductor wafer surface.

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183. Qian, Bainian; Simon, Ethan Scott; Jacob, George C., Polishing pad window.

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184. Fruitman, Clinton O.; Meloni, Mark A.; Gopalan, Periya; Yednak, III, Andrew, Polishing pad window for a chemical mechanical polishing tool.

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185. Yang, Charles Chiun-Chieh; Herb, John D.; Schultz, Stephen C., Polishing pad window for a chemical-mechanical polishing tool.

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186. Budinger, William D.; Roberts, John V. H., Polishing pad with a transparent portion.

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187. Prasad, Abaneshwar, Polishing pad with light-stable light-transmitting region.

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188. Prasad, Abaneshwar, Polishing pad with microporous regions.

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189. Turner,Kyle A.; Beeler,Jeffrey L.; Newell,Kelly J., Polishing pad with recessed window.

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190. Wiswesser, Andreas Norbert; Swedek, Boguslaw A., Polishing pad with transparent window.

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191. Tolles, Robert D., Polishing pad with transparent window having reduced window leakage for a chemical mechanical polishing apparatus.

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192. Tolles, Robert D., Polishing pad with transparent window having reduced window leakage for a chemical mechanical polishing apparatus.

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193. Tolles,Robert D., Polishing pad with transparent window having reduced window leakage for a chemical mechanical polishing apparatus.

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194. Swedek, Boguslaw A.; Birang, Manoocher, Polishing pad with two-section window having recess.

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195. Wiswesser,Andreas Norbert, Polishing pad with window.

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196. Wiswesser,Andreas Norbert, Polishing pad with window.

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197. Wiswesser,Andreas Norbert; Oshana,Ramiel; Hughes,Kerry F.; Rohde,Jay; Huo,David Datong; Benvegnu,Dominic J., Polishing pad with window.

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198. Birang,Manoocher; Gleason,Allan; Guthrie,William L., Polishing pad with window and method of fabricating a window in a polishing pad.

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199. John V. H. Roberts ; David B. James ; Lee Melbourne Cook ; Charles W. Jenkins, Polishing pads and methods relating thereto.

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200. Roberts John V. H. ; James David B. ; Cook Lee Melbourne ; Jenkins Charles W., Polishing pads and methods relating thereto.

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201. Roberts, John H. V.; James, David B.; Cook, Lee Melbourne, Polishing pads and methods relating thereto.

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202. Roberts, John H. V.; James, David B.; Cook, Lee Melbourne, Polishing pads and methods relating thereto.

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203. Roberts, John H. V; James, David B.; Cook, Lee Melbourne, Polishing pads and methods relating thereto.

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204. Roberts, John V. H.; James, David B.; Cook, Lee Melbourne; Jenkins, Charles W., Polishing pads and methods relating thereto.

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205. Sevilla Roland K. ; Kaufman Frank B. ; Anjur Sriram P., Polishing pads for a semiconductor substrate.

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206. Birang,Manoocher; Swedek,Boguslaw A., Polishing pads useful for endpoint detection in chemical mechanical polishing.

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207. Dudovicz, Walter, Polishing silicon wafers.

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208. Dudovicz, Walter, Polishing silicon wafers.

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209. Sato, Akinori; Hirose, Junji; Nakamura, Kenji; Fukuda, Takeshi; Doura, Masato, Process for manufacturing polishing pad.

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210. Swedek,Bogdan; Lischka,David J.; David,Jeffrey Drue; Benvegnu,Dominic J., Sealed polishing pad methods.

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211. Swedek,Bogdan; Lischka,David J.; David,Jeffrey Drue; Benvegnu,Dominic J., Sealed polishing pad, system and methods.

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212. Miyaji Akira,JPX ; Arai Takashi,JPX ; Yagi Takeshi,JPX, Semiconductor wafer polishing apparatus.

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213. Allison, William; Scott, Diane; Kerprich, Robert; Huang, Ping; Frentzel, Richard, Soft polishing pad for polishing a semiconductor substrate.

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214. Birang,Manoocher; David,Jeffrey Drue; Swedek,Boguslaw A., Substrate edge detection.

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215. Wiswesser,Andreas Norbert; Birang,Manoocher; Swedek,Boguslaw A., Substrate monitoring during chemical mechanical polishing.

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216. Tolles, Robert D., Substrate polishing apparatus.

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217. Tolles Robert D., Substrate polishing article.

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218. Tolles, Robert D., Substrate polishing article.

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219. Tolles, Robert D., Substrate polishing article.

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220. Yokley, Edward M.; Obeng, Yaw S., Substrate polishing device and method.

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221. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.

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222. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.

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223. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.

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224. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.

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225. Swedek,Boguslaw A; Johansson,Nils; Wiswesser,Andreas Norbert; Birang,Manoocher, System and method for in-line metal profile measurement.

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226. Swedek,Boguslaw A.; Birang,Manoocher, System for endpoint detection with polishing pad.

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227. Swedek,Bogdan; Lischka,David J.; David,Jeffrey Drue; Benvegnu,Dominic J., System with sealed polishing pad.

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228. Taylor, Theodore M.; Carswell, Andrew, Systems and pads for planarizing microelectronic workpieces and associated methods of use and manufacture.

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229. Prasad,Abaneshwar, Transparent microporous materials for CMP.

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230. Prasad,Abaneshwar, Transparent microporous materials for CMP.

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231. Newell,Kelly J., Ultrasonic welding method for the manufacture of a polishing pad comprising an optically transmissive region.

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232. Cangshan Xu ; Brian S. Lombardo, Unsupported chemical mechanical polishing belt.

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233. Palou-Rivera, Ignasi; Swedek, Boguslaw A.; Karuppiah, Lakshmanan, Wafer edge characterization by successive radius measurements.

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234. Bajaj Rajeev ; Litvak Herbert E. ; Surana Rahul K. ; Jew Stephen C. ; Pecen Jiri, Wafer polishing device with movable window.

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235. Bajaj Rajeev ; Litvak Herbert E. ; Surana Rahul K. ; Jew Stephen C. ; Pecen Jiri, Wafer polishing device with movable window.

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236. Budinger, William D.; Kubo, Naoto, Window portion with an adjusted rate of wear.

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237. Lehman, Kurt; Chen, Charles; Allen, Ronald L.; Shinagawa, Robert; Sethuraman, Anantha; Bevis, Christopher F.; Trikas, Thanassis; Chen, Haiguang; Meng, Ching Ling, Windows configurable to be coupled to a process tool or to be disposed within an opening in a polishing pad.

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