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High resistivity silicon carbide substrates for high power microwave devices 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C04B-035/565
출원번호 US-0138566 (1993-10-18)
발명자 / 주소
  • Barrett Donovan L. (Penn Hills Twp. PA) Hobgood Hudson M. (Murrysville PA) McHugh James P. (Wilkins Twp. PA) Hopkins Richard H. (Murrysville PA)
출원인 / 주소
  • Northrop Grumman Corp. (Los Angeles CA 02)
인용정보 피인용 횟수 : 58  인용 특허 : 5

초록 ▼

A substrate for use in semiconductor devices, fabricated of silicon carbide and having a resistivity of greater than 1500 Ohm-cm. The substrate being characterized as having deep level impurities incorporated therein, wherein the deep level elemental impurity comprises one of a selected heavy metal,

대표청구항 ▼

A composition of matter for use in semiconductor devices, fabricated of single polytype silicon carbide and having a resistivity of at least 1500W300 meV and include a selected heavy metal; and wherein the selected heavy metal is an element found in periodic groups IIIB, IVB, VB, VIB, VIIB, VIIIB, I

이 특허에 인용된 특허 (5)

  1. Vodakov Jury A. (prospekt Engelsa ; 69/1 ; kv. 35 Leningrad SU) Mokhov Evgeny N. (prospekt Energetikov ; 54 ; korpus 2 ; kv. 59 Leningrad SU), Method for epitaxial production of semiconductor silicon carbide utilizing a close-space sublimation deposition techniqu.
    상세보기
  2. Stein Ren (Rttenbach DEX), Method for manufacturing single-crystal silicon carbide.
    상세보기
  3. Powell J. Anthony (N. Olmsted OH) Will Herbert A. (N. Olmsted OH), Process for fabricating SiC semiconductor devices.
    상세보기
  4. Parsons James D. (Newbury Park CA) Stafsudd Oscar (Los Angeles CA), Silicon carbide:metal carbide alloy semiconductor and method of making the same.
    상세보기
  5. Davis Robert F. (Raleigh NC) Carter ; Jr. Calvin H. (Raleigh NC) Hunter Charles E. (Durham NC), Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide.
    상세보기

이 특허를 인용한 특허 (58)

  1. Snyder, David W.; Everson, William J., Axial gradient transport apparatus and process.
    상세보기
  2. Rengarajan, Varatharajan; Brouhard, Bryan K.; Nolan, Michael C.; Zwieback, Ilya, Axial gradient transport growth process and apparatus utilizing resistive heating.
    상세보기
  3. Thomas E. Wicker ; Alan M. Schoepp ; Robert A. Maraschin, Contamination controlling method and apparatus for a plasma processing chamber.
    상세보기
  4. Hanser, Andrew D.; Liu, Lianghong; Preble, Edward; Tsvetkov, Denis; Williams, N. Mark; Xu, Xueping, Group III nitride articles and methods for making same.
    상세보기
  5. Hanser, Andrew D.; Liu, Lianghong; Preble, Edward; Tsvetkov, Denis; Williams, N. Mark; Xu, Xueping, Group III nitride articles having nucleation layers, transitional layers, and bulk layers.
    상세보기
  6. Malta,David Phillip; Jenny,Jason Ronald; Hobgood,Hudson McDonald; Tsvetkov,Valeri F., Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen.
    상세보기
  7. Zwieback, Ilya; Gupta, Avinash K.; Semenas, Edward; Anderson, Thomas E., Guided diameter SiC sublimation growth with multi-layer growth guide.
    상세보기
  8. Zwieback, Ilya; Anderson, Thomas E.; Gupta, Avinash K., Halosilane assisted PVT growth of SiC.
    상세보기
  9. Ellison,Alexandre; Son,Nguyen Tien; Magnusson,Bj철rn; Janz챕n,Erik, High resistivity silicon carbide single crystal.
    상세보기
  10. Mueller, Stephan, High-resistivity silicon carbide substrate for semiconductor devices with high break down voltage.
    상세보기
  11. Preble, Edward A.; Tsvetkov, Denis; Hanser, Andrew D.; Williams, N. Mark; Xu, Xueping, Inclusion-free uniform semi-insulating group III nitride substrate and methods for making same.
    상세보기
  12. Preble, Edward A.; Tsvetkov, Denis; Hanser, Andrew D.; Williams, N. Mark; Xu, Xueping, Inclusion-free uniform semi-insulating group III nitride substrates and methods for making same.
    상세보기
  13. Zwieback, Ilya; Anderson, Thomas E.; Souzis, Andrew E.; Ruland, Gary E.; Gupta, Avinash K.; Rengarajan, Varatharajan; Wu, Ping; Xu, Xueping, Large diameter, high quality SiC single crystals, method and apparatus.
    상세보기
  14. Zwieback, Ilya; Anderson, Thomas E.; Souzis, Andrew E.; Ruland, Gary E.; Gupta, Avinash K.; Rengarajan, Varatharajan; Wu, Ping; Xu, Xueping, Large diameter, high quality SiC single crystals, method and apparatus.
    상세보기
  15. Snyder, David W.; Everson, William J., Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals.
    상세보기
  16. Powell,Adrian; Brady,Mark; Tsvetkov,Valeri F., Low basal plane dislocation bulk grown SiC wafers.
    상세보기
  17. Leonard, Robert Tyler; Hobgood, Hudson M.; Thore, William A., Method for controlled growth of silicon carbide and structures produced by same.
    상세보기
  18. Leonard, Robert Tyler; Hobgood, Hudson M.; Thore, William A., Method for controlled growth of silicon carbide and structures produced by same.
    상세보기
  19. Hanser, Andrew D.; Liu, Lianghong; Preble, Edward A.; Tsvetkov, Denis; Williams, Nathaniel Mark; Xu, Xueping, Method for making group III nitride articles.
    상세보기
  20. Mueller, Ralf; Stockmeier, Matthias; Vogel, Michael, Method for producing a vanadium-doped silicon carbide volume monocrystal, and vanadium-doped silicon carbide substrate.
    상세보기
  21. Jenny, Jason Ronald; Malta, David Phillip; Hobgood, Hudson McDonald; Mueller, Stephan; Tsvetkov, Valeri F., Method for producing semi-insulating resistivity in high purity silicon carbide crystals.
    상세보기
  22. Jenny, Jason Ronald; Malta, David Phillip; Hobgood, Hudson McDonald; Mueller, Stephan; Tsvetokov, Valeri F., Method for producing semi-insulating resistivity in high purity silicon carbide crystals.
    상세보기
  23. Gupta, Avinash K.; Semenas, Edward; Zwieback, Ilya; Barrett, Donovan L.; Souzis, Andrew E., Method of and system for forming SiC crystals having spatially uniform doping impurities.
    상세보기
  24. Gupta, Avinash K.; Zwieback, Ilya; Chen, Jihong; Getkin, Marcus; Stepko, Walter R. M.; Semenas, Edward, Method of annealing a sublimation grown crystal.
    상세보기
  25. Basceri,Cem; Yushin,Nikolay; Balkas,Cengiz M., Method of forming semi-insulating silicon carbide single crystal.
    상세보기
  26. Leonard, Robert Tyler; Powell, Adrian; Tsvetkov, Valeri F., Method of producing high quality silicon carbide crystal in a seeded growth system.
    상세보기
  27. Wang, Shaoping; Kopec, Aneta; Ware, Rodd Mitchell; Holmes, Sonia, Method of silicon carbide monocrystalline boule growth.
    상세보기
  28. King, Sean, Microelectronic transistor having an epitaxial graphene channel layer.
    상세보기
  29. Teraguchi Nobuaki,JPX ; Suzuki Akira,JPX, Nitride-type III-V HEMT having an InN 2DEG channel layer.
    상세보기
  30. Jenny, Jason Ronald; Malta, David Phillip; Hobgood, Hudson McDonald; Mueller, Stephan Georg; Brady, Mark; Leonard, Robert Tyler; Powell, Adrian; Tsvetkov, Valerl F., One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer.
    상세보기
  31. Hobgood,Hudson M.; Jenny,Jason R.; Malta,David Phillip; Tsvetkov,Valeri F.; Carter, Jr.,Calvin H.; Leonard,Robert Tyler; Fechko, Jr.,George J., One hundred millimeter single crystal silicon carbide wafer.
    상세보기
  32. Jenny, Jason Ronald; Malta, David Phillip; Hobgood, Hudson McDonald; Mueller, Stephan Georg; Brady, Mark; Leonard, Robert Tyler; Powell, Adrian; Tsvetkov, Valeri F., One hundred millimeter single crystal silicon carbide wafer.
    상세보기
  33. Leonard,Robert Tyler; Powell,Adrian; Mueller,Stephan Georg; Tsvetkov,Valeri F., One hundred millimeter single crystal silicon carbide wafer.
    상세보기
  34. Shu Nakajima JP, Plasma treatment apparatus and method of semiconductor processing.
    상세보기
  35. Cooper, Jr., James Albert; Melloch, Michael R.; Shenoy, Jayarama; Spitz, Jan, Power devices in wide bandgap semiconductor.
    상세보기
  36. Powell, Adrian; Tsvetkov, Valeri F.; Brady, Mark; Leonard, Robert T., Process for producing high quality large size silicon carbide crystals.
    상세보기
  37. Leonard, Robert Tyler; Powell, Adrian; Tsvetkov, Valeri F., Producing high quality bulk silicon carbide single crystal by managing thermal stresses at a seed interface.
    상세보기
  38. Fechko, Jr.,George J.; Jenny,Jason R.; Hobgood,Hudson M.; Tsvetkov,Valeri F.; Carter, Jr.,Calvin H., Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient.
    상세보기
  39. Jenny,Jason Ronald; Malta,David Phillip; Hobgood,Hudson McDonald; Mueller,Stephan Georg; Brady,Mark; Leonard,Robert Tyler; Powell,Adrian; Tsvetkov,Valeri F.; Fechko, Jr.,George J.; Carter, Jr.,Calvin H., Seeded single crystal silicon carbide growth and resulting crystals.
    상세보기
  40. Tsvetkov, Valeri F.; Hobgood, Hudson M.; Carter, Jr., Calvin H.; Jenny, Jason R., Semi-insulating silicon carbide produced by Neutron transmutation doping.
    상세보기
  41. Calvin H. Carter, Jr. ; Mark Brady ; Valeri F. Tsvetkov, Semi-insulating silicon carbide without vanadium domination.
    상세보기
  42. Calvin H. Carter, Jr. ; Mark Brady ; Valeri F. Tsvetkov, Semi-insulating silicon carbide without vanadium domination.
    상세보기
  43. Carter ; Jr. Calvin H. ; Brady Mark ; Tsvetkov Valeri F., Semi-insulating silicon carbide without vanadium domination.
    상세보기
  44. Carter, Jr., Calvin H.; Brady, Mark; Tsvetkov, Valeri F., Semi-insulating silicon carbide without vanadium domination.
    상세보기
  45. Casady,Jeffrey B.; Mazzola,Michael, Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications.
    상세보기
  46. Casady,Jeffrey B.; Mazzola,Michael, Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications.
    상세보기
  47. Nakabayashi, Masashi; Fujimoto, Tatsuo; Sawamura, Mitsuru; Ohtani, Noboru, Silicon carbide single crystal, silicon carbide single crystal wafer, and method of production of same.
    상세보기
  48. Shiomi, Hiromu; Kinoshita, Hiroyuki, Silicon carbide single crystal, silicon carbide substrate and manufacturing method for silicon carbide single crystal.
    상세보기
  49. Zwieback, Ilya; Anderson, Thomas E.; Gupta, Avinash K., Silicon carbide single crystals with low boron content.
    상세보기
  50. Zwieback, Ilya; Gupta, Avinash K., Silicon carbide with low nitrogen content and method for preparation.
    상세보기
  51. Preble, Edward A.; Liu, Lianghong; Hanser, Andrew D.; Williams, N. Mark; Xu, Xueping, Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement.
    상세보기
  52. Preble, Edward A.; Liu, Lianghong; Hanser, Andrew D.; Williams, N. Mark; Xu, Xueping, Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement.
    상세보기
  53. Preble, Edward; Liu, Lianghong; Hanser, Andrew D.; Williams, N. Mark; Xu, Xueping, Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement.
    상세보기
  54. Preble, Edward; Liu, Lianghong; Hanser, Andrew D.; Williams, N. Mark; Xu, Xueping, Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement.
    상세보기
  55. Gupta, Avinash K.; Semenas, Edward; Zwieback, Ilya; Barrett, Donovan L.; Souzis, Andrew E., System for forming SiC crystals having spatially uniform doping impurities.
    상세보기
  56. Powell,Adrian; Brixius,William H.; Leonard,Robert Tyler; McClure,Davis Andrew; Laughner,Michael, Three inch silicon carbide wafer with low warp, bow, and TTV.
    상세보기
  57. Zwieback, Ilya; Wu, Ping; Rengarajan, Varatharajan; Gupta, Avinash K.; Anderson, Thomas E.; Ruland, Gary E.; Souzis, Andrew E.; Xu, Xueping, Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof.
    상세보기
  58. Zwieback, Ilya; Anderson, Thomas E.; Gupta, Avinash K.; Nolan, Michael C.; Brouhard, Bryan K.; Ruland, Gary E., Vanadium doped SiC single crystals and method thereof.
    상세보기

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