초록 ▼

A magneto-resistance effect thin-film magnetic head with a flux guide for efficiently guiding the signal magnetic flux from the magnetic recording medium to a magneto-resistance effect film. The flux guide is made up of a laminated structure of alternate layers of permalloy and Ti so that the number

A magneto-resistance effect thin-film magnetic head with a flux guide for efficiently guiding the signal magnetic flux from the magnetic recording medium to a magneto-resistance effect film. The flux guide is made up of a laminated structure of alternate layers of permalloy and Ti so that the number of the permalloy films is two or more. The flux guide may be formed by an underlying layer and the laminated structure formed on the underlying layer. The film thickness T1 of the permalloy film and the film thickness T2 of the Ti film preferably are such that 0 nm12<6 nm. The flux guide of the MR head may be formed easily and is excellent in magnetic characteristics. The playback signal output of the MR head may be improved without complicating the production process of the MR head.

대표청구항 ▼

A magneto-resistance effect thin-film magnetic head comprising: a magneto-resistance effect device interposed between a pair of magnetic shield cores, a bias conductor operatively disposed in overlapping relationship with said magneto-resistance effect device to allow a magnetic bias to be imparted

A magneto-resistance effect thin-film magnetic head comprising: a magneto-resistance effect device interposed between a pair of magnetic shield cores, a bias conductor operatively disposed in overlapping relationship with said magneto-resistance effect device to allow a magnetic bias to be imparted thereto; and a flux guide interposed between an upper insulation layer and a lower nonmagnetic gap forming layer for efficiently guiding a signal magnetic flux from a magnetic recording medium to a magneto-resistance effect film, wherein: said flux guide has a laminated film structure composed of permalloy and Ti films alternated with each other, the number of the permalloy films being two, three, or more, said flux guide, said upper insulation layer and lower gap forming layer are disposed between said shield cores at a rear end of said head, said magneto-resistance effect device is interposed between said lower nonmagnetic gap forming layer and an upper nonmagnetic gap forming layer, which in turn are interposed between said shield cores at a forward end of said head, said flux guide has a layer of Ta underlying the laminated film structure, each permalloy film having a film thickness T1 such that 0 nm50 nm and each Ti film has a film thickness T2 such that 0 nm6 nm, and said flux guide has a sole magnetic domain.