이 특허를 인용한 특허 (102)

1. Ootsuka, Fumio, 3D stacked multilayer semiconductor memory using doped select transistor channel.

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2. Hashimoto Makoto,JPX, Apparatus and method for determining whether to load a workpiece into a working device using stored and updated status flags.

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3. Oosterlaken, Theodorus; de Ridder, Chris; Jdira, Lucian, Apparatus and method for manufacturing a semiconductor device.

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4. Kamata, Keisuke; Sato, Hiroyuki; Furukawahara, Kazunori; Suwada, Masaei; Okubo, Kenkichi; Arai, Izumi, Apparatus and method for pre-baking substrate upstream of process chamber.

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5. Kamiya, Tatsuo, Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum.

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6. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Apparatus for supercritical processing of a workpiece.

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7. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Apparatus for supercritical processing of multiple workpieces.

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8. den Hartog Besselink, Edwin; Garssen, Adriaan; Dirkmaat, Marco, Cassette holder assembly for a substrate cassette and holding member for use in such assembly.

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9. Zaitsu, Masaru; Fukazawa, Atsuki; Fukuda, Hideaki, Continuous process incorporating atomic layer etching.

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10. Jones,William Dale, Control of fluid flow in the processing of an object with a fluid.

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11. Raisanen, Petri; Shero, Eric; Haukka, Suvi; Milligan, Robert Brennan; Givens, Michael Eugene, Deposition of metal borides.

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12. Zhu, Chiyu; Shrestha, Kiran; Haukka, Suvi, Deposition of metal borides.

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13. Doche Claude,FRX, Device for transporting flat objects and process for transferring said objects between said device and a processing machine.

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14. Pinches, David Kenneth, Disc for industrial plants.

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15. Miyajima, Toshihiko; Suzuki, Hitoshi; Igarashi, Hiroshi, Enclosed container lid opening/closing system and enclosed container lid opening/closing method.

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16. Milligan, Robert Brennan, Formation of boron-doped titanium metal films with high work function.

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17. Sheydayi,Alexei; Sutton,Thomas, Gate valve for plus-atmospheric pressure semiconductor process vessels.

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18. Aoki, Shigeki; Sakai, Yuichi; Yamashita, Mitsuo; Shinya, Hiroshi, Heat processing apparatus and heat processing method.

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19. Aoki, Shigeki; Sakai, Yuichi; Yamashita, Mitsuo; Shinya, Hiroshi, Heat processing apparatus and heat processing method.

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20. Sutton, Thomas R.; Biberger, Maximilan A., High pressure compatible vacuum chuck for semiconductor wafer including lift mechanism.

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21. Jones, William D., High pressure fourier transform infrared cell.

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22. Biberger, Maximilian A.; Layman, Frederick Paul; Sutton, Thomas Robert, High pressure processing chamber for semiconductor substrate.

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23. Biberger,Maximilian A.; Layman,Frederick Paul; Sutton,Thomas Robert, High pressure processing chamber for semiconductor substrate.

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24. Jones,William Dale, High-pressure processing chamber for a semiconductor wafer.

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25. Jones,William Dale, High-pressure processing chamber for a semiconductor wafer.

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26. Tseronis, James A.; Mortiz, Heiko D.; Chandra, Mohan; Farmer, Robert B.; Jafri, Ijaz H.; Talbott, Jonathan, Inverted pressure vessel with horizontal through loading.

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27. Robert B Farmer ; Jonathan A. Talbott ; Mohan Chandra ; James A. Tseronis ; Heiko D. Moritz, Inverted pressure vessel with shielded closure mechanism.

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28. Jung, Sung-Hoon, Metal oxide protective layer for a semiconductor device.

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29. Sheydayi,Alexei, Method and apparatus for clamping a substrate in a high pressure processing system.

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30. Whigham William A. ; Culp Mark E. ; Nelson Allan T., Method and apparatus for controlling byproduct induced defect density.

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31. Morimoto Toru,JPX, Method and apparatus for controlling substrate processing apparatus.

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32. Goshi,Gentaro, Method and apparatus for cooling motor bearings of a high pressure pump.

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33. Pore, Viljami, Method and apparatus for filling a gap.

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34. Pore, Viljami; Knaepen, Werner; Jongbloed, Bert; Pierreux, Dieter; Van Aerde, Steven R. A.; Haukka, Suvi; Fukuzawa, Atsuki; Fukuda, Hideaki, Method and apparatus for filling a gap.

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35. Pore, Viljami; Knaepen, Werner; Jongbloed, Bert; Pierreux, Dieter; Van Der Star, Gido; Suzuki, Toshiya, Method and apparatus for filling a gap.

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36. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Method and apparatus for supercritical processing of multiple workpieces.

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37. Parent,Wayne M.; Goshi,Gentaro, Method and system for cooling a pump.

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38. Parent,Wayne M., Method and system for determining flow conditions in a high pressure processing system.

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39. Tolle, John; Hill, Eric; Winkler, Jereld Lee, Method and system for in situ formation of gas-phase compounds.

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40. Parent, Wayne M.; Geshell, Dan R., Method and system for passivating a processing chamber.

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41. Hansen,Brandon; Lowe,Marie, Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid.

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42. Jung, Sung-Hoon; Raisanen, Petri; Liu, Eric Jen Cheng; Schmotzer, Mike, Method and system to reduce outgassing in a reaction chamber.

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43. Winkler, Jereld Lee, Method and systems for in-situ formation of intermediate reactive species.

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44. Suemori, Hidemi, Method for depositing dielectric film in trenches by PEALD.

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45. Kang, DongSeok, Method for depositing thin film.

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46. Takamure, Noboru; Okabe, Tatsuhiro, Method for forming Ti-containing film by PEALD using TDMAT or TDEAT.

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47. Shiba, Eiichiro, Method for forming aluminum nitride-based film by PEALD.

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48. Winkler, Jereld Lee, Method for forming conformal carbon films, structures conformal carbon film, and system of forming same.

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49. Fukazawa, Atsuki, Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition.

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50. Fukazawa, Atsuki; Fukuda, Hideaki; Takamure, Noboru; Zaitsu, Masaru, Method for forming dielectric film in trenches by PEALD using H-containing gas.

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51. Kimura, Yosuke; de Roest, David, Method for forming film having low resistance and shallow junction depth.

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52. Ishikawa, Dai; Fukazawa, Atsuki, Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches.

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53. Namba, Kunitoshi, Method for forming silicon oxide cap layer for solid state diffusion process.

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54. Shiba, Eiichiro, Method for performing uniform processing in gas system-sharing multiple reaction chambers.

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55. Yamagishi, Takayuki; Suwada, Masaei; Tanaka, Hiroyuki, Method for positioning wafers in multiple wafer transport.

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56. Kato, Richika; Nakano, Ryu, Method for protecting layer by forming hydrocarbon-based extremely thin film.

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57. Kato, Richika; Okuro, Seiji; Namba, Kunitoshi; Nonaka, Yuya; Nakano, Akinori, Method for protecting layer by forming hydrocarbon-based extremely thin film.

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58. Kawamura,Kohei; Asano,Akira; Miyatani,Koutarou; Hillman,Joseph T.; Palmer,Bentley, Method for supercritical carbon dioxide processing of fluoro-carbon films.

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59. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Method for supercritical processing of multiple workpieces.

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60. Zaitsu, Masaru, Method of atomic layer etching using functional group-containing fluorocarbon.

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61. Zaitsu, Masaru; Kobayashi, Nobuyoshi; Kobayashi, Akiko; Hori, Masaru; Kondo, Hiroki; Tsutsumi, Takayoshi, Method of cyclic dry etching using etchant film.

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62. Knaepen, Werner; Maes, Jan Willem; Jongbloed, Bert; Kachel, Krzysztof Kamil; Pierreux, Dieter; De Roest, David Kurt, Method of forming a structure on a substrate.

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63. Lee, Choong Man; Yoo, Yong Min; Kim, Young Jae; Chun, Seung Ju; Kim, Sun Ja, Method of forming metal interconnection and method of fabricating semiconductor apparatus using the method.

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64. Chun, Seung Ju; Yoo, Yong Min; Choi, Jong Wan; Kim, Young Jae; Kim, Sun Ja; Lim, Wan Gyu; Min, Yoon Ki; Lee, Hae Jin; Yoo, Tae Hee, Method of processing a substrate and a device manufactured by using the method.

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65. Biberger,Maximilian Albert; Layman,Frederick Paul; Sutton,Thomas Robert, Method of supercritical processing of a workpiece.

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66. Kohen, David; Profijt, Harald Benjamin, Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures.

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67. Raisanen, Petri; Givens, Michael Eugene, Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures.

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68. Margetis, Joe; Tolle, John, Methods of forming highly p-type doped germanium tin films and structures and devices including the films.

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69. Margetis, Joe; Tolle, John, Methods of forming silicon germanium tin films and structures and devices including the films.

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70. Zhu, Chiyu; Asikainen, Timo; Milligan, Robert Brennan, NbMC layers.

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71. Sheydayi,Alexei, Non-contact shuttle valve for flow diversion in high pressure systems.

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72. Noriaki Yoshikawa JP; Tadashi Yotsumoto JP; Terumi Muguruma JP; Yoshitaka Hasegawa JP; Yuichi Kuroda JP, Pod and method of cleaning it.

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73. Yoshikawa Noriaki,JPX ; Yotsumoto Tadashi,JPX ; Muguruma Terumi,JPX ; Hasegawa Yoshitaka,JPX ; Kuroda Yuichi,JPX, Pod and method of cleaning it.

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74. Bonora, Anthony C.; Fosnight, William J.; Martin, Raymond S., Port door removal and wafer handling robotic system.

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75. Sheydayi,Alexei, Pressure energized pressure vessel opening and closing device and method of providing therefor.

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76. Wuester,Christopher D., Process flow thermocouple.

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77. Margetis, Joe; Tolle, John; Bartlett, Gregory; Bhargava, Nupur, Process for forming a film on a substrate using multi-port injection assemblies.

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78. Alokozai, Fred; Milligan, Robert Brennan, Process gas management for an inductively-coupled plasma deposition reactor.

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79. Alokozai, Fred; Milligan, Robert Brennan, Process gas management for an inductively-coupled plasma deposition reactor.

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80. Winkler, Jereld Lee, Pulsed remote plasma method and system.

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81. Miyajima,Toshihiko; Kagaya,Takeshi; Suzuki,Hitoshi; Sasaki,Mutsuo, Purging system and purging method for the interior of a portable type hermetically sealed container.

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82. Wang, Song; Wan, Jiyu; Feng, He; Wu, Hongjiang, Reduced pressure drying method and device of a substrate.

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83. Mullee, William H., Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process.

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84. Zhu, Chiyu, Selective film deposition method to form air gaps.

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85. Kim, Young Jae; Choi, Seung Woo; Yoo, Yong Min, Semiconductor device and manufacturing method thereof.

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86. Milligan, Robert Brennan; Alokozai, Fred, Semiconductor reaction chamber with plasma capabilities.

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87. Arai, Izumi, Single-and dual-chamber module-attachable wafer-handling chamber.

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88. Xie, Qi; de Roest, David; Woodruff, Jacob; Givens, Michael Eugene; Maes, Jan Willem; Blanquart, Timothee, Source/drain performance through conformal solid state doping.

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89. Tolle, John, Structures and devices including germanium-tin films and methods of forming same.

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90. Heiko D Moritz ; Jonathan A. Talbott ; Mohan Chandra ; James A. Tseronis ; Ijaz Jafri, Supercritical fluid drying system and method of use.

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91. Jeong, Sang Jin; Han, Jeung Hoon; Choi, Young Seok; Park, Ju Hyuk, Susceptor for semiconductor substrate processing apparatus.

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92. Tang, Fu; Givens, Michael Eugene; Xie, Qi; Raisanen, Petri, System and method for gas-phase sulfur passivation of a semiconductor surface.

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93. Gale,Glenn; Hillman,Joseph T.; Jacobson,Gunilla; Palmer,Bentley, System and method for processing a substrate using supercritical carbon dioxide processing.

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94. Lin, Yu Chih; Tsai, Chih Hsin; Shih, Ming Hua; Pao, Shih Kai, System for sensing position of spin dryer cover.

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95. Lawson, Keith R.; Givens, Michael E., Systems and methods for dynamic semiconductor process scheduling.

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96. Jacobson,Gunilla; Yellowaga,Deborah, Treatment of a dielectric layer using supercritical CO.

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97. Kevwitch, Robert, Treatment of substrate using functionalizing agent in supercritical carbon dioxide.

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98. Sheydayi,Alexei, Vacuum chuck utilizing sintered material and method of providing thereof.

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99. Coomer, Stephen Dale, Variable adjustment for precise matching of multiple chamber cavity housings.

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100. Shugrue, John Kevin, Variable conductance gas distribution apparatus and method.

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101. Schmotzer, Michael; Whaley, Shawn, Variable gap hard stop design.

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102. Mikkelsen Kirk J. ; Adams Michael S. ; Bores Greg ; Wiseman Brian S., Wafer enclosure with door.

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