초록 ▼

An insulating layer in a semiconductor device and a process for forming the insulating layer is described. The insulating layer comprises of a nitride layer over the substrate having a residual stress of between -8×109 dynes/cm-2 and -3×1010 dynes/cm-2. The insulating layer can further comprise a do

An insulating layer in a semiconductor device and a process for forming the insulating layer is described. The insulating layer comprises of a nitride layer over the substrate having a residual stress of between -8×109 dynes/cm-2 and -3×1010 dynes/cm-2. The insulating layer can further comprise a doped oxide layer under the nitride layer and can further comprise an interlevel dielectric layer over the nitride layer. Moreover, the nitride layer can be formed by bringing the temperature in a chemical vapor deposition reactor to below 550 degrees Celsius, placing the substrate into the reactor at the temperature, and forming the nitride layer on the substrate. Alternatively, the nitride layer can be formed by pushing the substrate into a chemical vapor deposition reactor at a speed greater than 300 millimeters per minute, and forming the nitride layer on the substrate.

대표청구항 ▼

A method of forming a semiconductor device, said method comprising the steps of: forming a transistor on said semiconductor substrate, said transistor having at least one silicide region; forming a doped oxide layer on said transistor including said silicide layer; forming a nitride layer having a t

A method of forming a semiconductor device, said method comprising the steps of: forming a transistor on said semiconductor substrate, said transistor having at least one silicide region; forming a doped oxide layer on said transistor including said silicide layer; forming a nitride layer having a tensile stress over said doped oxide layer; and forming an interlayer dielectric on said nitride layer.