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Semiconductor device having built-in high frequency bypass capacitor 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-023/52
  • H01L-023/48
  • H01L-023/58
출원번호 US-0460338 (1995-06-02)
발명자 / 주소
  • Wenzel James F. (Austin TX) Chopra Mona A. (Austin TX) Foster Stephen W. (Dripping Springs TX)
출원인 / 주소
  • Motorola, Inc. (Schaumburg IL 02)
인용정보 피인용 횟수 : 153  인용 특허 : 0

초록 ▼

A high frequency bypass capacitor (36, 36′) is built into a thin-film portion (16, 16′) of a polymer carrier substrate (15) of a PBGA (10). The carrier substrate (15) has both a stiffener (18) and a thin-film portion (16, 16′) which has multiple metal layers (24, 28, 30, 32). The power supply planes

대표청구항 ▼

A semiconductor device comprising: a thin-film substrate having a plurality of substantially parallel conductive layers, wherein every two adjacent conductive layers of the plurality of conductive layers are separated by an insulative layer and wherein the plurality of conductive layers comprises: a

이 특허를 인용한 특허 (153)

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