이 특허에 인용된 특허 (7) 인용/피인용 타임라인 분석

1. Salugsugan Isi (Fremont CA), Audio end point detector for chemical-mechanical polishing and method therefor.

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2. Yu Chris C. (Boise ID) Sandhu Gurtej S. (Boise ID), Chemical mechanical planarization (CMP) of a semiconductor wafer using acoustical waves for in-situ end point detection.

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3. Burke Peter A. (Austin TX) Freeman Eric H. (Underhill Center VT) Ross Gilbert H. (Burlington VT), Chemical-mechanical polishing tool with end point measurement station.

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4. Leach Michael A. (South Burlington VT) Machesney Brian J. (Burlington VT) Nowak Edward J. (Essex Junction VT), Device for detecting an end point in polishing operations.

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5. Datta Madhav (Yorktown Heights NY) Romankiw Lubomyr T. (Briarcliff Manor NY), Electrochemical tool for uniform metal removal during electropolishing.

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6. Cote William J. (Poughquag NY) Cronin John E. (Milton VT) Hill William R. (Underhill VT) Hoffman Cheryl A. (Colchester VT), Endpoint detection apparatus and method for chemical/mechanical polishing.

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7. Sandhu Gurtej S. (Boise) Doan Trung T. (Boise ID), Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image o.

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이 특허를 인용한 특허 (85) 인용/피인용 타임라인 분석

1. Sun,Lizhong; Tsai,Stan; Redeker,Fritz, Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus.

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2. Obeng Yaw S. ; Schultz Laurence D., Apparatus and method for continuous delivery and conditioning of a polishing slurry.

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3. Boggs Karl E. ; Davis Kenneth M. ; Landers William F. ; Merkling ; Jr. Robert M. ; Passow Michael L. ; Stephens Jeremy K., Apparatus and method for controlling polishing of integrated circuit substrates.

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4. Daniel David W. ; Gregory John W. ; Allman Derryl D. J., Apparatus and method of detecting a polishing endpoint layer of a semiconductor wafer which includes a metallic reporting substance.

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5. Taravade Kunal N., Apparatus for detecting an endpoint polishing layer of a semiconductor wafer having a wafer carrier with independent concentric sub-carriers and associated method.

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6. Hirabayashi, Hideaki; Sakurai, Naoaki; Cho, Toshitsura; Shimizu, Shumpei; Kato, Katsuhiro; Saito, Akiko, COPPER-BASED METAL POLISHING COMPOSITION, METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE, POLISHING COMPOSITION, ALUMINUM-BASED METAL POLISHING COMPOSITION, AND TUNGSTEN-BASED METAL POLISHING COMPOS.

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7. Simon, Joseph P., Chemical mechanical planarization (CMP) system and method for determining an endpoint in a CMP operation.

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8. Willis, Stephen L., Chemical mechanical planarization of conductive material.

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9. Willis,Stephen L., Chemical mechanical planarization of conductive material.

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10. Merchant, Sailesh Mansinh; Misra, Sudhanshu; Roy, Pradip Kumar, Chemical mechanical polishing composition and method of polishing metal layers using same.

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11. Easter William Graham ; Misra Sudhanshu ; Roy Pradip Kumar ; Vitkavage Susan Clay, Chemical mechanical polishing endpoint apparatus using component activity in effluent slurry.

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12. Feeney Paul M. ; Krywanczyk Timothy C. ; David Lawrence D. ; Tiersch Matthew T. ; White Eric J., Chemical mechanical polishing slurry and method for polishing metal/oxide layers.

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13. Krywanczyk Timothy C. ; David Lawrence D., Chemical mechanical polishing slurry for tungsten.

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14. Kevin J. Lee, Chemical-mechanical polishing slurry.

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15. Lee Kevin J., Chemical-mechanical polishing slurry.

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16. Lee Kevin J., Chemical-mechanical polishing slurry.

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17. Paul M. Feeney ; Timothy C. Krywanczyk ; Lawrence D. David ; Matthew T. Tiersch ; Eric J. White, Chemical-mechanical-polishing slurry and method for polishing metal/oxide layers.

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18. Cossaboon David ; Wang Jiun-Fang ; Cook Lee Melbourne, Compositions and methods for polishing silica, silicates, and silicon nitride.

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19. Small Robert J. ; Cheng Jun ; Maw Taishih, Compositions for cleaning organic and plasma etched residues for semiconductors devices.

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20. Berman, Michael J., Determination of film thickness during chemical mechanical polishing.

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21. Racanelli,Marco; Hu,Chun; Sherman,Phil N., Double-implant high performance varactor and method for manufacturing same.

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22. Weihs Timothy P. ; Mann Adrian B. ; Searson Peter C., Electrochemical-control of abrasive polishing and machining rates.

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23. Uzoh Cyprian E., Electroplating workpiece fixture having liquid gap spacer.

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24. Uzoh Cyprian Emeka, Electroplating workpiece fixture having liquid gap spacer.

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25. Gail D. Shelton ; Gayle W. Miller, Endpoint detection method and apparatus which utilize a chelating agent to detect a polishing endpoint.

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26. Shelton Gail D. ; Miller Gayle W., Endpoint detection method and apparatus which utilize a chelating agent to detect a polishing endpoint.

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27. Chisholm Brynne K. ; Miller Gayle W. ; Shelton Gail D., Endpoint detection method and apparatus which utilize an endpoint polishing layer of catalyst material.

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28. Chisholm Brynne K. ; Miller Gayle W. ; Shelton Gail D., Endpoint detection method and apparatus which utilize an endpoint polishing layer of catalyst material.

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29. Gonzales David B. ; Bartlett Aaron T., Endpoint stabilization for polishing process.

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30. Gonzales, David B.; Bartlett, Aaron T., Endpoint stabilization for polishing process.

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31. Jeremy S. Lansford, Feedback control of strip time to reduce post strip critical dimension variation in a transistor gate electrode.

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32. Osugi Richard S. ; Nagahara Ronald J. ; Lee Dawn M., In-situ chemical-mechanical polishing slurry formulation for compensation of polish pad degradation.

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33. Seliskar John J. ; Allman Derryl D. J. ; Gregory John W. ; Yakura James P. ; Kwong Dim Lee, Integrated circuit device having a capacitor with the dielectric peripheral region being greater than the dielectric central region.

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34. Hayden Daniel B., Membrane-like filter element for chemical mechanical polishing slurries.

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35. Charles F. Drill ; Milind Weling, Method and apparatus for a gaseous environment providing improved control of CMP process.

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36. Hiroshi Mizuno JP; Osamu Kinoshita JP; Tetsuaki Murohashi JP; Akihisa Ueno JP; Yoshifumi Sakuma JP; Kostas Amberiadis, Method and apparatus for chemical-mechanical polishing.

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37. Berman Michael J. ; Holland Karey L., Method and apparatus for concurrent pad conditioning and wafer buff in chemical mechanical polishing.

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38. Allman Derryl D. J. ; Daniel David W. ; Gregory John W., Method and apparatus for detecting a planarized outer layer of a semiconductor wafer with a confocal optical system.

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39. Derryl D. J. Allman ; David W. Daniel ; John W. Gregory, Method and apparatus for detecting a planarized outer layer of a semiconductor wafer with a confocal optical system.

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40. Allman Derryl D. J. ; Daniel David W. ; Chisholm Michael F., Method and apparatus for detecting a polishing endpoint based upon heat conducted through a semiconductor wafer.

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41. Allman Derryl D. J. ; Daniel David W. ; Gregory John W., Method and apparatus for detecting a polishing endpoint based upon infrared signals.

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42. Taravade Kunal N., Method and apparatus for detecting an endpoint polishing layer by transmitting infrared light signals through a semiconductor wafer.

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43. Miller Gayle W. ; Chisholm Michael F., Method and apparatus for detecting an ion-implanted polishing endpoint layer within a semiconductor wafer.

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44. Newell E. Chiesl, III ; Gregory L. Burns ; Theodore C. Moore, Method and apparatus for detecting presence of residual polishing slurry subsequent to polishing of a semiconductor wafer.

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45. Lizhong Sun ; Stan D. Tsai ; Fred C. Redeker, Method and apparatus for electrochemical-mechanical planarization.

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46. Sun, Lizhong; Tsai, Stan D.; Redeker, Fred C., Method and apparatus for electrochemical-mechanical planarization.

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47. Jose L. Cruz ; Cuc K. Huynh ; David L. Walker, Method and apparatus for multiphase chemical mechanical polishing.

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48. Gregory, John, Method and apparatus for planarizing a wafer surface of a semiconductor wafer having an elevated portion extending therefrom.

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49. Nagahara Ronald J. ; Lee Dawn M., Method and apparatus for using across wafer back pressure differentials to influence the performance of chemical mechanical polishing.

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50. Nagahara, Ronald J.; Lee, Dawn M., Method and apparatus for using across wafer back pressure differentials to influence the performance of chemical mechanical polishing.

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51. Ang,Boon Yong; Chen,Cinti Xiaohua; Chan,Simon S.; Kang,Inkuk, Method for achieving increased control over interconnect line thickness across a wafer and between wafers.

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52. Zhou Mei Sheng,SGX ; Ron-Fu Chu,SGX, Method for chemical-mechanical polish (CMP) planarizing of cooper containing conductor layers.

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53. Lee Fu-Sheng,TWX ; Chen Chien-Chen,TWX ; Lee Jiun-Chung,TWX ; Huang Hsin-Chieh,TWX, Method for endpoint detection for copper CMP.

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54. Lee, Fu-Sheng; Chen, Chien-Chen; Lee, Jiun-Chung; Huang, Hsin-Chieh, Method for endpoint detection for copper CMP.

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55. Hsia Shouli Steve ; Wang Yanhua ; Pallinti Jayanthi, Method for shallow trench isolations with chemical-mechanical polishing.

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56. Miller Gayle W. ; Shelton Gail D. ; Chisholm Brynne K., Method of detecting a polishing endpoint layer of a semiconductor wafer which includes a non-reactive reporting specie.

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57. Hasegawa Mieko,JPX, Method of fabricating a semiconductor device.

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58. Tomoko Wake JP; Yasuaki Tsuchiya JP, Method of forming a copper-containing metal interconnect using a chemical mechanical planarization (CMP) slurry.

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59. Torek Kevin J., Method of making an oxide structure having a finely calibrated thickness.

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60. Mingming Fang, Method of polishing a memory or rigid disk with an ammonia-and/or halide-containing composition.

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61. Zhang,Jian; Sun,Fred; Wang,Shumin; Cherian,Isaac K.; Klingenberg,Eric H., Method of polishing a substrate with a polishing system containing conducting polymer.

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62. Lee, Chou-Feng, Method of reworking tungsten particle contaminated semiconductor wafers.

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63. Cruz, Jose L.; Huynh, Cuc K.; Krywanczyk, Timothy C.; Sturtevant, Douglas K., Method to prevent leaving residual metal in CMP process of metal interconnect.

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64. Li Xu ; Zhao Yuexing ; Hymes Diane J. ; de Larios John M., Methods and apparatus for cleaning semiconductor substrates after polishing of copper film.

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65. McClain, James B.; DeSimone, Joseph M., Methods, apparatus and slurries for chemical mechanical planarization.

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66. McClain, James B.; DeSimone, Joseph M., Methods, apparatus and slurries for chemical mechanical planarization.

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67. Bernstein, Kerry; Bryant, Andres; Howell, Wayne J.; Klaasen, William A.; Pricer, Wilbur D.; Stamper, Anthony K., On chip alpha-particle detector.

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68. Kevin J. Torek, Oxide structure having a finely calibrated thickness.

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69. Doi,Toshiro; Philipossian,Ara; DeNardis,Darren, Polishing apparatus and method of polishing work piece.

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70. Doi,Toshiro; Philipossian,Ara; DeNardis,Darren, Polishing apparatus and method of polishing work piece.

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71. Aiyer Arun A., Polishing pad thinning to optically access a semiconductor wafer surface.

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72. Gambino Jeffrey P. ; Jaso Mark A., Process to reduce localized polish stop erosion.

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73. Thomas, Terence M., Semiconductor wafer with a resistant film.

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74. Shouli Steve Hsia ; Yanhua Wang ; Jayanthi Pallinti, Shallow trench isolation chemical-mechanical polishing process.

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75. Allman, Derryl D. J.; Gregory, John W., Substrate planarization with a chemical mechanical polishing stop layer.

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76. Lee, Chih-Cheng, Substrate structure and method for manufacturing the same.

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77. Lubomirsky,Dmitry, Substrate support with fluid retention band.

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78. Meloni Mark, System and method for detecting CMP endpoint via direct chemical monitoring of reactions.

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79. Sakai, Katsuhisa, System for manufacturing a semiconductor device, polishing slurry feeder and method for manufacturing a semiconductor device.

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80. Pasch Nicholas F., Use of corrosion inhibiting compounds in post-etch cleaning processes of an integrated circuit.

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81. Nicholas F. Pasch, Use of corrosion inhibiting compounds to inhibit corrosion of metal plugs in chemical-mechanical polishing.

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82. Pasch Nicholas F., Use of corrosion inhibiting compounds to inhibit corrosion of metal plugs in chemical-mechanical polishing.

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83. Oey Hewett, Joyce S.; Pasadyn, Alexander J., Use of slurry waste composition to determine the amount of metal removed during chemical mechanical polishing, and system for accomplishing same.

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84. Glass Thomas R., Wafer surface treatment methods and systems using electrocapillarity.

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85. Glass Thomas R., Wafer surface treatment methods and systems using electrocapillarity.

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