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Method of bonding wafers having vias including conductive material 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/28
출원번호 US-0461951 (1995-06-05)
발명자 / 주소
  • Gaul Stephen Joseph (Melbourne FL)
출원인 / 주소
  • Harris Corporation (Palm Bay FL 02)
인용정보 피인용 횟수 : 291  인용 특허 : 0

초록 ▼

A surface mountable integrated circuit and a method of manufacture are disclosed. A wafer 110 has a die with an integrated circuit 119 in one surface of the wafer. A via 130 extends to the opposite surface. The via has a sidewall oxide 131 and is filled with a conductive material such as metal or do

대표청구항 ▼

A method for fabricating surface mountable integrated circuits comprising the steps of: providing a device wafer of monocrystalline silicon material with first and second surfaces and with integrated circuits formed on the first surface of said device wafer; forming an oxide layer between the second

이 특허를 인용한 특허 (291)

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