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Chemical vapor deposition reactor system and integrated circuit 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B32B-009/00
  • B05C-011/00
출원번호 US-0601558 (1996-02-14)
발명자 / 주소
  • Russell Kathleen (Santa Clara CA) Robles Stuardo (Sunnyvale CA) Nguyen Bang C. (Fremont CA) Sivaramakrishnan Visweswaren (Cupertino CA)
출원인 / 주소
  • Applied Materials, Inc. (Santa Clara CA 02)
인용정보 피인용 횟수 : 199  인용 특허 : 0

초록 ▼

A method of and apparatus for depositing a silicon oxide layer onto a wafer or substrate is provided. The present method includes introducing into a processing chamber a process gas including silicon, oxygen, boron, phosphorus and germanium to form a germanium doped BPSG oxide layer having a reflow

대표청구항 ▼

A chemical vapor deposition reactor system comprising: a housing for forming a vacuum chamber; a substrate holder, located within said housing, for holding a substrate; a gas distributor for introducing a process gas into said vacuum chamber to deposit a layer over said substrate; a gas mixing area,

이 특허를 인용한 특허 (199)

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