초록 ▼

Extended cutoff wavelengths of PtSi Schottky infrared detectors in the long wavelength infrared (LWIR) regime have been demonstrated for the first time. This result was achieved by incorporating a 1-nm-thick p+doping spike at the PtSi/Si interface. The extended cutoff wavelengths resulted from the c

Extended cutoff wavelengths of PtSi Schottky infrared detectors in the long wavelength infrared (LWIR) regime have been demonstrated for the first time. This result was achieved by incorporating a 1-nm-thick p+doping spike at the PtSi/Si interface. The extended cutoff wavelengths resulted from the combined effects of an increased electric field near the silicide/Si interface due to the p+doping spike and the Schottky image force. The p+doping spikes were grown by molecular beam epitaxy at 450 degrees Celsius using elemental boron as the dopant source, with doping concentrations ranging from 1×1019 to 1×1021 cm-3. The cutoff wavelengths were shown to increase with increasing doping concentrations of the p+spikes.

대표청구항 ▼

A method of fabricating a PtSi Schottky infrared detector comprising the steps of: a) providing a Si substrate; b) depositing less than 2 nm thick layer of p-doped Si onto said substrate; and c) depositing a layer of PtSi on said p-doped Si layer by co-evaporating Pt and Si in a 1:1 ratio while the

A method of fabricating a PtSi Schottky infrared detector comprising the steps of: a) providing a Si substrate; b) depositing less than 2 nm thick layer of p-doped Si onto said substrate; and c) depositing a layer of PtSi on said p-doped Si layer by co-evaporating Pt and Si in a 1:1 ratio while the substrate is held at a temperature of about 450 degrees C.