초록 ▼

This is a method for fabricating a structure useful in semiconductor circuitry. The method comprises: growing a buffer layer of non-Pb/Bi-containing high-dielectric constant oxide layer directly or indirectly on a semiconductor substrate; and depositing a Pb/Bi-containing high-dielectric constant ox

This is a method for fabricating a structure useful in semiconductor circuitry. The method comprises: growing a buffer layer of non-Pb/Bi-containing high-dielectric constant oxide layer directly or indirectly on a semiconductor substrate; and depositing a Pb/Bi-containing high-dielectric constant oxide on the buffer layer. Alternately this may be a structure useful in semiconductor circuitry, comprising: a buffer layer 26 of non-lead-containing high-dielectric constant oxide layer directly or indirectly on a semiconductor substrate 10; and a lead-containing high-dielectric constant oxide 28 on the buffer layer. Preferably a germanium layer 12 is epitaxially grown on the semiconductor substrate and the buffer layer is grown on the germanium layer. When the substrate is silicon, the non-Pb/Bi-containing high-dielectric constant oxide layer is preferably less than about 10 nm thick. A second non-Pb/Bi-containing high-dielectric constant oxide layer 30 may be grown on top of the Pb/Bi-containing high-dielectric constant oxide and a conducting layer (top electrode 32) may also be grown on the second non-Pb/Bi-containing high-dielectric constant oxide layer.

대표청구항 ▼

A structure useful in semiconductor circuitry, comprising: a germanium layer overlying a semiconductor substrate; a first buffer layer of substantially Pb and Bi free, high-dielectric constant oxide on said germanium layer; and a second high-dielectric constant oxide layer comprising an element sele

A structure useful in semiconductor circuitry, comprising: a germanium layer overlying a semiconductor substrate; a first buffer layer of substantially Pb and Bi free, high-dielectric constant oxide on said germanium layer; and a second high-dielectric constant oxide layer comprising an element selected from the group consisting of: Pb, Bi, and combinations thereof, on said buffer layer.