초록 ▼

A disposable post process for contact openings to interconnect material of reduced geometry and no enlarged landing pads is disclosed. A layer of material is formed over interconnect regions on a semiconductor wafer and subsequently patterned into posts which define the location and shape of opening

A disposable post process for contact openings to interconnect material of reduced geometry and no enlarged landing pads is disclosed. A layer of material is formed over interconnect regions on a semiconductor wafer and subsequently patterned into posts which define the location and shape of openings to be formed in a subsequently formed planar layer. After a layer is formed to surround the posts, the posts are removed to create openings in the layer above underlying interconnect regions. These openings may then be used to form suitable contacts to the interconnect regions.

대표청구항 ▼

A method for forming an opening over an interconnect on a semiconductor wafer, comprising the steps of: (a) forming an interconnect without an enlarged landing pad; (b) forming a first layer having a first material over the interconnect; (c) patterning the layer of first material to form a post over

A method for forming an opening over an interconnect on a semiconductor wafer, comprising the steps of: (a) forming an interconnect without an enlarged landing pad; (b) forming a first layer having a first material over the interconnect; (c) patterning the layer of first material to form a post over the interconnect; (d) forming a second layer having a second material over the semiconductor wafer and around the post; and (e) removing the post to form an opening in the layer of second material over the interconnect.