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Landing pad technology doubled up as local interconnect and borderless contact for deep sub-half micrometer IC applicati 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-023/48
  • H01L-023/52
  • H01L-029/40
출원번호 US-0466649 (1995-06-06)
발명자 / 주소
  • Huang Richard J. (Milpitas CA) Cheung Robin W. (Cupertino CA) Rakkhit Rajat (Milpitas CA) Lee Raymond T. (Sunnyvale CA)
출원인 / 주소
  • Advanced Micro Devices, Incorporated (Sunnyvale CA 02)
인용정보 피인용 횟수 : 68  인용 특허 : 0

초록

The present invention is directed to a technology that simplifies the process of fabricating multilayer interconnects and reduces capacitance in integrated circuits employing multilayer interconnects. The novel landing pad technology of the present invention simplifies the current process steps invo

대표청구항

A multilayer interconnect structure for connecting conductive regions to conductive regions separated by insulating regions supported on a semiconductor substrate, said multilayer interconnect structure comprising: (a) at least one Ti/TiN stack interconnect structure comprising a layer of Ti and a f

이 특허를 인용한 특허 (68)

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