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Thin film transistor having crystalline semiconductor layer obtained by irradiation 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/76
  • H01L-027/01
출원번호 US-0487166 (1995-06-07)
우선권정보 JP-0156647 (1994-06-14)
발명자 / 주소
  • Kusumoto Naoto (Kanagawa JPX) Takemura Yasuhiko (Shiga JPX) Ohtani Hisashi (Kanagawa JPX)
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd. (Kanagawa-ken JPX 03)
인용정보 피인용 횟수 : 220  인용 특허 : 0

초록

An amorphous semiconductor film having a thickness of 400Åor more is formed on an insulating surface and is wholly or selectively etched to form a region having a thickness 300Åor less. This is used as a channel-forming region in a TFT.

대표청구항

A thin film transistor having a maximum value of electric field effect mobility of 50 cm2/Vs or more and comprising an active layer of thin fill semiconductor which is present on an insulating surface, and a marker for aligning a mask comprising the same semiconductor with said active layer and prov

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  219. Takayama, Toru; Sato, Keiji; Yamazaki, Shunpei, Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof.
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