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Semiconductor device with bump structure 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-023/48
  • H01L-023/52
  • H01L-029/40
출원번호 US-0544637 (1995-10-18)
우선권정보 JP-0253949 (1994-10-19); JP-0035942 (1995-01-31)
발명자 / 주소
  • Kondo Ichiharu (Nagoya JPX) Noritake Chikage (Ama-gun JPX) Watanabe Yusuke (Obu JPX)
출원인 / 주소
  • Nippondenso Co., Ltd. (Kariya JPX 03)
인용정보 피인용 횟수 : 186  인용 특허 : 0

초록

A semiconductor device, which has a high adhesiveness to the Cu film and the barrier metal at the bump part or LSI wiring part of a flip chip, is disclosed. On a silicon substrate are formed a transistor as a functional element and a bump for making contact with the transistor and an external substr

대표청구항

A semiconductor device comprising: a semiconductor element provided on a semiconductor chip; a metallic film formed on said semiconductor element; a metallic bump structure for making contact with said semiconductor element and a wiring provided on an external substrate, provided on a part of said m

이 특허를 인용한 특허 (186)

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