초록 ▼

High conductivity interconnection lines are formed of high conductivity material, such as copper, employing barrier layers impervious to the diffusion of copper atoms. Higher operating speeds are obtained with conductive interconnection lines, preferably copper interconnection lines, formed above th

High conductivity interconnection lines are formed of high conductivity material, such as copper, employing barrier layers impervious to the diffusion of copper atoms. Higher operating speeds are obtained with conductive interconnection lines, preferably copper interconnection lines, formed above the wire bonding layer.

대표청구항 ▼

A semiconductor device, comprising: a semiconductor substrate; a plurality of levels of dielectric layers and aluminum conductive layers formed on the semiconductor substrate, wherein an upper aluminum conductive layer constitutes a wire bonding layer for external connection thereto; and a high cond

A semiconductor device, comprising: a semiconductor substrate; a plurality of levels of dielectric layers and aluminum conductive layers formed on the semiconductor substrate, wherein an upper aluminum conductive layer constitutes a wire bonding layer for external connection thereto; and a high conductivity interconnection line formed at a level above the aluminum wire bonding layer with a dielectric layer therebetween, wherein the high conductivity interconnection line consists essentially of a conductive metal selected from the group consisting of copper, copper-base alloys, gold, gold-base alloys, silver, silver-base alloys and superconducting materials.