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Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/336
출원번호 US-0280461 (1994-07-26)
우선권정보 JP-0204773 (1993-07-27); JP-0235463 (1993-08-27)
발명자 / 주소
  • Adachi Hiroki (Kanagawa JPX) Takenouchi Akira (Kanagawa JPX) Fukada Takeshi (Kanagawa JPX) Uehara Hiroshi (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX)
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd. (Kanagawa JPX 03)
인용정보 피인용 횟수 : 291  인용 특허 : 7

초록

A method for manufacturing a semiconductor device comprises the steps of forming a semiconductor film on a substrate, oxidizing a surface of said semiconductor film in an oxidizing atmosphere with said semiconductor film heated or irradiated with light, and further depositing an oxide film on the ox

대표청구항

A method for manufacturing a semiconductor device comprising the steps of: forming a semiconductor film on a substrate having an insulating surface; oxidizing a surface of said semiconductor film to form an oxide film by irradiating said surface with light having a wavelength of 0.5 m4 m

이 특허에 인용된 특허 (7)

  1. Radosevich Joseph R. (Bethlehem PA) Roy Pradip K. (Allentown PA), Forming a device dielectric on a deposited semiconductor having sub-layers.
  2. Kunii Masafumi (Kanagawa JPX) Hayashi Yuji (Kanagawa JPX), Liquid crystal display device having LDD structure type thin film transistors connected in series.
  3. Swartz George A. (North Brunswick NJ), Method for fabricating a radiation hardened oxide having two portions.
  4. Tsukamoto Katsuhiro (Hyogo JPX) Tokui Akira (Hyogo JPX), Method for forming a thin layer on a semiconductor substrate.
  5. Chen Min-Liang (Hsin PA TWX) Roy Pradip K. (Allentown PA), Method of making thin film transistors including recrystallization and high pressure oxidation.
  6. Fujishiro Felix (San Antonio TX) Lee Chang-Ou (San Antonio TX) Vines Landon (Boise ID), Rapid thermal oxidation of silicon in an ozone ambient.
  7. So Hoe S. (Kyungki KRX), Thin film transistor and process for producing the same.

이 특허를 인용한 특허 (291)

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  53. Tanaka, Koichiro; Ohnuma, Hideto, Method for manufacturing transistor semiconductor devices with step of annealing to getter metal with phosphorous.
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  167. Tanaka, Koichiro; Ohnuma, Hideto, Semiconductor device and manufacturing method thereof.
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  173. Yamazaki Shunpei,JPX ; Zhang Hongyong,JPX, Semiconductor device and method for forming the same.
  174. Yamazaki,Shunpei; Zhang,Hongyong, Semiconductor device and method for forming the same.
  175. Yamazaki,Shunpei; Zhang,Hongyong, Semiconductor device and method for forming the same.
  176. Adachi Hiroki,JPX ; Takenouchi Akira,JPX ; Fukada Takeshi,JPX ; Uehara Hiroshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
  177. Adachi Hiroki,JPX ; Takenouchi Akira,JPX ; Fukada Takeshi,JPX ; Uehara Hiroshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
  178. Hiroki Adachi JP; Akira Takenouchi JP; Takeshi Fukada JP; Hiroshi Uehara JP; Yasuhiko Takemura JP, Semiconductor device and method for manufacturing the same.
  179. Hongyong Zhang JP; Hideki Uochi JP; Toru Takayama JP; Takeshi Fukunaga JP; Yasuhiko Takemura JP, Semiconductor device and method for manufacturing the same.
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