[특허]Monolithic-hybrid radiation detector/readout

Monolithic-hybrid radiation detector/readout 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-031/00
출원번호	US-0397818 (1995-03-03)
발명자 / 주소	Robinson David A. (Oceanside CA)
출원인 / 주소	Santa Barbara Research Center (Goleta CA 02)
인용정보	피인용 횟수 : 34 인용 특허 : 0

초록 ▼

Methods are disclosed for fabricating a monolithic array of radiation detectors and associated readout circuits, as are monolithic arrays fabricated by the methods. One method includes the steps of (a) providing a first substrate (10) having a first major surface (10a) and an oppositely disposed second major surface (10b); (b) doping the first major surface with a dopant having a first type of electrical conductivity to form a first doped region (12) adjacent to the first major surface; (c) forming an electrically insulating dielectric layer (14) on the first major surface; (d) thermally bonding a second substrate to the dielectric layer and thinning the second substrate to provide a semiconductor layer (16) having a predetermined thickness; (e) delineating the semiconductor layer into a plurality of adjacently disposed electrically isolated regions each of which corresponds to a radiation detector unit cell; (f) fabricating a readout integrated circuit (17) within a portion of the semiconductor layer within each of the unit cells; (g) conductively coupling (22, 23) each of the readout integrated circuits to an underlying portion of the first doped region; and (h) doping the second major surface with a dopant having a second type of electrical conductivity to form a second doped region (24) adjacent to the second major surface. The second major surface is a radiation receiving surface of the monolithic array.

대표청구항 ▼

A monolithic array of photodiodes and readout integrated circuits, comprising: a substrate comprised of a semiconductor material, said substrate having a first major surface and an oppositely disposed radiation receiving second major surface, said substrate having a first doped region adjacent to said first major surface that is doped with a dopant having a first type of electrical conductivity, said substrate having a second doped region adjacent to said second major surface that is doped with a dopant having a second type of electrical conductivity; means for partitioning said first doped region of said substrate into a plurality of adjacently disposed and electrically isolated areas each of which corresponds to one photodiode unit cell; wherein each of said unit cells includes, an electrically insulating dielectric layer disposed on said first major surface; a semiconductor layer disposed on said electrically insulating dielectric layer, said semiconductor layer comprising a unit cell readout integrated circuit; and an electrode directly connecting said readout integrated circuit to an underlying portion of said first doped region; said monolithic array further comprising a common electrode disposed over said second major surface.

이 특허를 인용한 특허 (34)

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Dries, J. Christopher; Lange, Michael, Method for combined fabrication of indium gallium arsenide/indium phosphide avalanche photodiodes and P-I-N photodiodes.
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Anderson, Todd J.; McCarten, John P.; Summa, Joseph R.; Tivarus, Cristian A.; Compton, John T., Stacked image sensor with shared diffusion regions in respective dropped pixel positions of a pixel array.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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Monolithic-hybrid radiation detector/readout 원문보기

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