이 특허를 인용한 특허 (123)

1. Finder, Jeffrey M.; Eisenbeiser, Kurt; Ramdani, Jamal; Droopad, Ravindranath; Ooms, William Jay, Acoustic wave device and process for forming the same.

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2. Gordon, Roy Gerald; Lim, Booyong S., Atomic layer deposition using metal amidinates.

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3. Johnson, Ralph Herbert, Band offset in AlInGaP based light emitters to improve temperature performance.

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4. Jamal Ramdani ; Lyndee Hilt ; Ravindranath Droopad ; William Jay Ooms, Electro-optic structure and process for fabricating same.

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5. Terry Gilton, Etching methods.

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6. Jewell, Jack L.; Temkin, Henryk, Extended wavelength strained layer lasers having nitrogen disposed therein.

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7. Jewell, Jack L.; Temkin, Henryk, Extended wavelength strained layer lasers having nitrogen disposed therein.

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8. Vieira,Amarildo J. C.; Barenburg,Barbara F.; Brophy,Timothy J., Fabrication of a wavelength locker within a semiconductor structure.

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9. Liang, Yong; Droopad, Ravindranath; Li, Hao; Yu, Zhiyi, Ferromagnetic semiconductor structure and method for forming the same.

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10. Gambin, Vincent; Ha, Wonill; Harris, James S., GaInNAsSb quantum well semiconductor devices.

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11. Yukio Shakuda JP, GaN semiconductor light emitting device having a group II-VI substrate.

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12. Shakuda Yukio,JPX, GaN semiconductor light emitting device having a group III-V substrate.

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13. Wang, Tao, GaN structures having low dislocation density and methods of manufacture.

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14. Takahashi,Koji, Gain-coupled distributed feedback semiconductor laser device and production method therefor.

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15. Oku Yasunari,JPX ; Takeishi Hidemi,JPX ; Kamei Hidenori,JPX ; Shinagawa Shuuichi,JPX, Gallium nitride compound-based semiconductor light emitting device and process for producing gallium nitride compound-based semiconductor thin film.

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16. Nido Masaaki,JPX, Gallium nitride type compound semiconductor light emitting element.

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17. Ito, Jun; Chiyo, Toshiaki; Shibata, Naoki; Watanabe, Hiroshi; Asami, Shizuyo; Asami, Shinya, Group III nitride compound semiconductor device.

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18. Shibata, Naoki; Kozawa, Takahiro; Tomita, Kazuyoshi; Kachi, Tetsu, Group III nitride compound semiconductor light-emitting element.

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19. Droopad, Ravindranath, Growth of compound semiconductor structures on patterned oxide films and process for fabricating same.

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20. Nuyen, Linh T., Heterojunction III-V transistor, in particular HEMT field effect transistor or heterojunction bipolar transistor.

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21. Chen, Tze-Chiang; Hekmatshoartabari, Bahman; Sadana, Devendra K.; Shahidi, Ghavam G.; Shahrjerdi, Davood, Heterojunction light emitting diode.

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22. Chen, Tze-Chiang; Hekmatshoartabari, Bahman; Sadana, Devendra K.; Shahidi, Ghavam G.; Shahrjerdi, Davood, Heterojunction light emitting diode.

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23. El Zein,Nada; Ramdani,Jamal; Eisenbeiser,Kurt; Droopad,Ravindranath, Heterojunction tunneling diodes and process for fabricating same.

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24. Jones-Albertus, Rebecca Elizabeth; Misra, Pranob; Sheldon, Michael J.; Yuen, Homan B.; Liu, Ting; Derkacs, Daniel; Sabnis, Vijit; Wiemer, Micahel West; Suarez, Ferran, High efficiency multijunction solar cells.

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25. Jones-Albertus, Rebecca Elizabeth; Misra, Pranob; Sheldon, Michael J.; Yuen, Homan B.; Liu, Ting; Derkacs, Daniel; Sabnis, Vijit; Wiemer, Michael West; Suarez, Ferran, High efficiency multijunction solar cells.

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26. Hou Hong Q. ; Reinhardt Kitt C., High-efficiency solar cell and method for fabrication.

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27. Ruden P. Paul ; Krishnankutty Subash, Hybrid ultraviolet detector.

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28. Chen, Tze-Chiang; Hekmatshoartabari, Bahman; Sadana, Devendra K.; Shahidi, Ghavam G.; Shahrjerdi, Davood, III-V heterojunction light emitting diode.

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29. Kurtz Steven R. ; Allerman Andrew A. ; Klem John F. ; Jones Eric D., InGaAsN/GaAs heterojunction for multi-junction solar cells.

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30. Lu, Yicheng; Emanetoglu, Nuri W., Integrated tunable surface acoustic wave technology and sensors provided thereby.

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31. Jones, Rebecca Elizabeth; Yuen, Homan Bernard; Liu, Ting; Misra, Pranob, Lattice matchable alloy for solar cells.

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32. Jones, Rebecca Elizabeth; Yuen, Homan Bernard; Liu, Ting; Misra, Pranob, Lattice matchable alloy for solar cells.

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33. Jones-Albertus, Rebecca Elizabeth; Yuen, Homan Bernard; Liu, Ting; Misra, Pranob, Lattice matchable alloy for solar cells.

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34. Jones-Albertus, Rebecca Elizabeth; Yuen, Homan Bernard; Liu, Ting; Misra, Pranob, Lattice matchable alloy for solar cells.

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35. Jones-Albertus, Rebecca Elizabeth; Yuen, Homan Bernard; Liu, Ting; Misra, Pranob, Lattice matchable alloy for solar cells.

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36. Curless, Jay A., Method and apparatus for controlling anti-phase domains in semiconductor structures and devices.

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37. Ooms,William J.; Hallmark,Jerald A., Method and apparatus utilizing monocrystalline insulator.

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38. Trosper, Scott T., Method and system for RFID communication.

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39. Ramdani, Jamal; Droopad, Ravindranath; Yu, Zhiyi, Method for fabricating a semiconductor structure including a metal oxide interface with silicon.

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40. Liang,Yong; Droopad,Ravindranath; Hu,Xiaoming; Wang,Jun; Wei,Yi; Yu,Zhiyi, Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process.

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41. Takahashi, Koji; Kawanishi, Hidenori, Method for forming compound semiconductor layer and compound semiconductor apparatus.

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42. Li, Hao; Droopad, Ravindranath; Marshall, Daniel S.; Wei, Yi; Hu, Xiao M.; Liang, Yong, Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate.

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43. Masahiro Ishida JP; Masaaki Yuri JP; Osamu Imafuji JP; Tadao Hashimoto JP; Kenji Orita JP, Method for growing nitride compound semiconductor.

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44. Gorrell, Jonathan F.; Cornett, Kenneth D., Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials.

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45. Yu, Zhiyi; Droopad, Ravindranath; Overgaard, Corey, Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method.

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46. Wang Shih-Yuan ; Chen Yong, Method for relieving stress in GaN devices.

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47. Keller Stacia ; Kozodoy Peter ; Mishra Umesh K. ; Denbaars Steven P., Method for the growth of P-type gallium nitride and its alloys.

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48. Yoshitaka Tomomura JP, Method of epitaxially growing III-V compound semiconductor containing nitrogen and at least another group V element utilizing MBE.

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49. Ouchi Toshihiko,JPX, Method of fabricating a device including compound semiconductor crystal and method of fabricating a compound semiconductor layer structure.

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50. Udagawa Takashi,JPX ; Terashima Kazutaka,JPX ; Nishimura Suzuka,JPX ; Tsuzaki Takuji,JPX, Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer.

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51. Kaneko Yawara,JPX, Method of making P-type group III-nitride semiconductor device having improved P contact.

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52. Morita,Etsuo, Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device.

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53. Barber, Greg D.; Kurtz, Sarah R., Method of preparing nitrogen containing semiconductor material.

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54. Edwards, Jr., John L.; Wei, Yi; Jordan, Dirk C.; Hu, Xiaoming; Craigo, James Bradley; Droopad, Ravindranath; Yu, Zhiyi; Demkov, Alexander A., Method of removing an amorphous oxide from a monocrystalline surface.

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55. Terry Gilton, Methods incorporating detectable atoms into etching processes.

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56. Arena, Chantal; Scott, Robin; Canizares, Claudio, Methods of fabricating dilute nitride semiconductor materials for use in photoactive devices and related structures.

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57. Arena, Chantal; Scott, Robin; Canizares, Claudio, Methods of forming dilute nitride materials for use in photoactive devices and related structures.

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58. Misra, Pranob; Jones, Rebecca Elizabeth; Liu, Ting; Fushman, Ilya; Yuen, Homan Bernard, Multi-junction solar cell with dilute nitride sub-cell having graded doping.

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59. Uchida Mamoru,JPX, Multi-layer, mirror of compound semiconductors including nitrogen and surface light-emitting device with the same.

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60. Walukiewicz, Wladyslaw; Yu, Kin Man; Wu, Junqiao, Multiband semiconductor compositions for photovoltaic devices.

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61. Fetzer, Christopher M.; King, Richard R.; Colter, Peter C., Multijunction solar cell having a lattice mismatched GrIII-GrV-X layer and a composition-graded buffer layer.

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62. Ha, Wonill; Gambin, Vincent; Harris, James S., Multiple GaInNAs quantum wells for high power applications.

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63. Kondou, Masahumi; Kamikawa, Takeshi; Kawaguchi, Yoshinobu, Nitride semiconductor light-emitting device and method for fabrication thereof.

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64. Kondou, Masahumi; Kamikawa, Takeshi; Kawaguchi, Yoshinobu, Nitride semiconductor light-emitting device and method for fabrication thereof.

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65. Nakamura, Shuji; Nagahama, Shinichi; Iwasa, Naruhito, Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor.

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66. Nakamura,Shuji; Nagahama,Shinichi; Iwasa,Naruhito, Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor.

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67. Nakamura,Shuji; Nagahama,Shinichi; Iwasa,Naruhito, Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor.

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68. Johnson,Ralph H.; Kim,Jin K.; Guenter,James K., Nitrogen sources for molecular beam epitaxy.

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69. Chang, Ping-Chih; Baca, Albert G.; Li, Nein-Yi; Hou, Hong Q.; Ashby, Carol I. H., Npn double heterostructure bipolar transistor with ingaasn base region.

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70. Bugge, Renato, Optical devices using a penternary III-V material system.

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71. Sato Shunichi,JPX, Optical semiconductor device having an active layer containing N.

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72. Sato, Shunichi, Optical semiconductor device having an active layer containing N.

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73. Shunichi Sato JP, Optical semiconductor device having an active layer containing N.

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74. Atanackovic, Petar, Optical tuning of light emitting semiconductor junctions.

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75. Atanackovic, Petar, Optical tuning of light emitting semiconductor junctions.

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76. Talin,Albert Alec; Voight,Steven A., Optical waveguide structure and method for fabricating the same.

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77. Kaneko Yawara,JPX, P-type group III-nitride semiconductor device.

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78. White,Henry W.; Zhu,Shen; Ryu,Yungryel, Process for preparing p-n junctions having a p-type ZnO film.

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79. Henry W. White ; Shen Zhu ; Yungryel Ryu, Process for preparing zinc oxide films containing p-type dopant.

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80. Wegleiter, Walter; Nirschl, Ernst; Fischer, Helmut, Process for producing a light-emitting and/or a light-receiving semiconductor body.

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81. Jones-Albertus, Rebecca Elizabeth; Arias, Ferran Suarez; Wiemer, Michael West; Sheldon, Michael J.; Yuen, Homan B., Pseudomorphic window layer for multijunction solar cells.

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82. Jaeger, Arndt; Stauβ, Peter; Windisch, Reiner, Radiation detector.

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83. Trosper, Scott T., Radio frequency identification devices, remote communication devices, identification systems, communication methods, and identification methods.

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84. Trosper, Scott T., Radio frequency identification devices, remote communication devices, identification systems, communication methods, and identification methods.

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85. Trosper, Scott T., Radio frequency identification devices, remote communication devices, identification systems, communication methods, and identification methods.

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86. Jones-Albertus, Rebecca E.; Sheldon, Michael J., Reverse heterojunctions for solar cells.

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87. Eisenbeiser,Kurt; Wang,Jun; Droopad,Ravindranath, Semiconductor device and method.

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88. Sawaki, Nobuhiko; Honda, Yoshio; Kameshiro, Norifumi; Yamaguchi, Masahito; Koide, Norikatsu; Ito, Shigetoshi; Ono, Tomoki; Furukawa, Katsuki, Semiconductor laser device and fabrication method thereof.

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89. Shimizu, Hitoshi; Kumada, Koji, Semiconductor laser device having lower threshold current.

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90. Riechert,Henning; Egorov,Anton Yurevitch, Semiconductor laser structure.

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91. Shakuda, Yukio, Semiconductor light emitting device and manufacturing method therefor.

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92. Shakuda, Yukio, Semiconductor light emitting device and manufacturing method therefor.

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93. Shakuda,Yukio, Semiconductor light emitting device and manufacturing method therefor.

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94. Shakuda, Yukio, Semiconductor light emitting device and method for producing the same.

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95. Shakuda,Yukio, Semiconductor light emitting device and method for producing the same.

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96. Shakuda Yukio,JPX, Semiconductor light-emitting device and method of fabricating the same.

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97. Zhiyi Yu ; Jamal Ramdani ; Ravindranath Droopad, Semiconductor structure.

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98. Yu,Zhiyi; Droopad,Ravindranath, Semiconductor structure exhibiting reduced leakage current and method of fabricating same.

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99. Eisenbeiser, Kurt; Foley, Barbara M.; Finder, Jeffrey M.; Thompson, Danny L., Semiconductor structure including a partially annealed layer and method of forming the same.

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100. Ramdani,Jamal; Droopad,Ravindranath; Hilt,Lyndee L.; Eisenbeiser,Kurt Williamson, Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same.

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101. Toru Takayama ; Takaaki Baba ; James S. Harris, Jr., Semiconductor structures using a group III-nitride quaternary material system with reduced phase separation.

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102. Takayama Toru ; Baba Takaaki ; Harris ; Jr. James S., Semiconductor structures using a group III-nitride quaternary material system with reduced phase separation and method of fabrication.

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103. Gilton Terry, Semiconductor wafer assemblies.

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104. Cotal, Hector L.; Sherif, Raed A., Solar cell having front grid metallization that does not contact the active layers.

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105. King, Richard R.; Fetzer, Christopher M.; Colter, Peter C., Solar cells having a transparent composition-graded buffer layer.

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106. King, Richard R.; Fetzer, Christopher M.; Colter, Peter C., Solar cells having a transparent composition-graded buffer layer.

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107. Ramdani,Jamal; Hilt,Lyndee L., Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate.

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108. Emrick, Rudy M.; Bosco, Bruce Allen; Holmes, John E.; Franson, Steven James; Rockwell, Stephen Kent, Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same.

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109. Eisenbeiser, Kurt W.; Yu, Zhiyi; Droopad, Ravindranath, Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same.

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110. Holm, Paige M.; Barenburg, Barbara Foley; Yamamoto, Joyce K.; Richard, Fred V., Structure and method for fabricating semiconductor microresonator devices.

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111. Lempkowski,Robert; Chason,Marc, Structure and method for fabricating semiconductor structures and devices for detecting an object.

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112. Tungare,Aroon; Klosowiak,Tomasz L., Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials.

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113. Valliath, George, Structure and method for fabrication for a solid-state lighting device.

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114. Emrick, Rudy M.; Rockwell, Stephen Kent; Holmes, John E., Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates.

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115. Takeuchi, Tetsuya; Chang, Ying-Ian, System and method for increasing nitrogen incorporation into a semiconductor material layer using an additional element.

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116. Tuttle, John R., Tracking systems, passive RFIDs, methods of locating and identifying RFIDs, and methods of tracking items.

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117. Leary,Michael Howard; Mars,Danny E.; Roh,Sungwon David; Chamberlin,Danielle R.; Chang,Ying Lan, Tunnel-junction structure incorporating N-type layer comprising nitrogen and a group VI dopant.

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118. Mawst,Luke J.; Tansu,Nelson; Meyer,Jerry R.; Vurgaftman,Igor, Type II quantum well mid-infrared optoelectronic devices.

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119. Augusto,Carlos J. R. P., Wavelength selective photonics device.

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120. Augusto, Carlos J. R. P., Wavelength-selective photonics device.

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121. Jones-Albertus, Rebecca Elizabeth; Suarez-Arias, Ferran; Wiemer, Michael West; Sheldon, Michael J.; Yuen, Homan, Window structure for solar cell.

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122. White Henry W. ; Zhu Shen ; Ryu Yungryel, Zinc oxide films containing P-type dopant and process for preparing same.

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123. White, Henry W.; Zhu, Shen; Ryu, Yungryel, Zinc oxide films containing p-type dopant and process for preparing same.

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