이 특허를 인용한 특허 (54)

1. Gurtej Sandhu ; Garo J. Derderian, ALD method to improve surface coverage.

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2. Sandhu, Gurtej; Derderian, Garo J., ALD method to improve surface coverage.

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3. Lane,Richard H., Capacitor with noble metal pattern.

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4. Kirlin Peter S. ; Van Buskirk Peter C., Chemical mechanical polishing of FeRAM capacitors.

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5. Josef Willer DE, Circuit arrangement with at least one capacitor.

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6. Jigish D. Trivedi ; Ravi Iyer, Conductive structure in an integrated circuit.

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7. Trivedi, Jigish D.; Iyer, Ravi, Conductive structure in an integrated circuit.

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8. Hidekazu Oda JP; Tomohiro Yamashita JP; Shuichi Ueno JP, Field effect transistor and method of manufacturing same.

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9. Oda Hidekazu,JPX ; Yamashita Tomohiro,JPX ; Ueno Shuichi,JPX, Field effect transistor and method of manufacturing same.

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10. Dennison, Charles H., Field effect transistors and integrated circuitry.

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11. Sandhu, Gurtej; Derderian, Garo J., Film composition.

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12. Harshfield Steven T., Hemispherical grained silicon on conductive nitride.

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13. Steven T. Harshfield, Hemispherical grained silicon on conductive nitride.

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14. Zahurak John K. ; Lane Richard H., Increased interior volume for integrated memory cell.

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15. Sandhu Gurtej S. ; Rolfson J. Brett, Integrated capacitor bottom electrode for use with conformal dielectric.

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16. Sandhu, Gurtej S.; Rolfson, J. Brett, Integrated capacitor bottom electrode for use with conformal dielectric.

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17. Sandhu, Gurtej S.; Rolfson, J. Brett, Integrated capacitor bottom electrode for use with conformal dielectric.

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18. Prall, Kirk; Rhodes, Howard E.; Sharan, Sujit; Sandhu, Gurtel; Ireland, Philip J., Integrated circuit having self-aligned CVD-tungsten/titanium contact plugs strapped with metal interconnect and method of manufacture.

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19. Prall, Kirk; Rhodes, Howard E.; Sharan, Sujit; Sandhu, Gurtel; Ireland, Philip J., Integrated circuit having self-aligned CVD-tungsten/titanium contact plugs strapped with metal interconnect and method of manufacture.

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20. Kim,Min Seok, MIM capacitor of semiconductor device and manufacturing method thereof.

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21. Huang Kuo-Tai,TWX ; Hsieh Wen-Yi,TWX ; Yew Tri-Rung,TWX, Method for fabricating a capacitor in a semiconductor device.

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22. Hsu, Sheng Teng; Evans, David Russell, Method for forming a damascene FeRAM cell structure.

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23. Peter Zurcher ; Robert E. Jones, Jr. ; Papu D. Maniar ; Peir Chu, Method for forming a semiconductor device.

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24. Asahina, Michio; Suzuki, Eiji; Matsumoto, Kazuki; Moriya, Naohiro, Method for manufacturing semiconductor devices.

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25. Kinugasa, Akinori, Method of fabricating a semiconductor device and the semiconductor device with a capacitor structure having increased capacitance.

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26. Salman Akram ; Y. Jeff Hu, Method of fabricating silicide pattern structures.

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27. Trivedi Jigish D. ; Iyer Ravi, Method of forming a local interconnect including selectively etched conductive layers and recess formation.

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28. Michaelis Alexander, Method of forming a trench capacitor using a rutile dielectric material.

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29. Lane, Richard H., Method of forming noble metal pattern.

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30. Richard H. Lane, Method of forming noble metal pattern.

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31. Agarwal, Vishnu K.; Derderian, Garo; Sandhu, Gurtej S.; Li, Weimin M.; Visokay, Mark; Basceri, Cem; Yang, Sam, Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers.

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32. Agarwal, Vishnu K.; Derderian, Garo; Sandhu, Gurtej S.; Li, Weimin M.; Visokay, Mark; Basceri, Cem; Yang, Sam, Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers.

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33. Agarwal, Vishnu K.; Derderian, Garo; Sandhu, Gurtej S.; Li, Weimin M.; Visokay, Mark; Basceri, Cem; Yang, Sam, Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers.

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34. Agarwal,Vishnu K.; Derderian,Garo; Sandhu,Gurtej S.; Li,Weimin M.; Visokay,Mark; Basceri,Cem; Yang,Sam, Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers.

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35. Akram, Salman; Hu, Y. Jeff, Methods of fabricating silicide pattern structures.

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36. Yun, Ju-young; Choi, Gil-heyun; Kim, Byung-hee; Lee, Jong-myeong; Yang, Seung-gil; Seo, Jung-hun, Methods of forming metal interconnections of semiconductor devices by treating a barrier metal layer.

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37. Yun,Ju young; Choi,Gil heyun; Kim,Byung hee; Lee,Jong myeong; Yang,Seung gil; Seo,Jung hun, Methods of forming metal interconnections of semiconductor devices by treating a barrier metal layer.

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38. Li Weimin ; Sandhu Gurtej S., Multiple step methods for forming conformal layers.

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39. Weimin Li ; Gurtej S. Sandhu, Multiple step methods for forming conformal layers.

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40. Hsieh, Chun-I; Damjanovic, Daniel, Process for forming a capacitor structure with rutile titanium oxide dielectric film.

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41. Fazan Pierre C. ; Schuele Paul, Scalable high dielectric constant capacitor.

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42. Fazan Pierre C. ; Schuele Paul, Scalable high dielectric constant capacitor.

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43. Michio Asahina JP; Eiji Suzuki JP; Kazuki Matsumoto JP; Naohiro Moriya JP, Semiconductor device and method for manufacturing semiconductor device.

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44. Asahina Michio,JPX ; Takeuchi Junichi,JPX ; Moriya Naohiro,JPX ; Matsumoto Kazuki,JPX, Semiconductor device and method of fabricating the same.

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45. Chittipeddi Sailesh ; Pearce Charles Walter, Semiconductor device structure including a tantalum pentoxide layer sandwiched between silicon nitride layers.

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46. Sailesh Chittipeddi ; Charles Walter Pearce, Semiconductor device structure including a tantalum pentoxide layer sandwiched between silicon nitride layers.

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47. Sandhu, Gurtej; Derderian, Garo J., Semiconductor device with novel film composition.

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48. Sandhu, Gurtej; Derderian, Garo J., Semiconductor device with novel film composition.

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49. Akram Salman ; Hu Y. Jeff, Silicide pattern structures and methods of fabricating the same.

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50. Akram, Salman; Hu, Y. Jeff, Silicide pattern structures and methods of fabricating the same.

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51. Akram, Salman; Hu, Y. Jeff, Silicide pattern structures and methods of fabricating the same.

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52. Duenas Salvador ; Kola Ratnaji Rao ; Kumagai Henry Y. ; Lau Maureen Yee ; Sullivan Paul A. ; Tai King Lien, Thin film capacitors and process for making them.

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53. Kola Ratnaji Rao ; Tai King Lien, Thin film tantalum oxide capacitors and resulting product.

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54. Isik C. Kizilyalli ; Sailesh M. Merchant ; Joseph R. Radosevich, Tungsten silicide nitride as a barrier for high temperature anneals to improve hot carrier reliability.

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