이 특허를 인용한 특허 (312)

1. Zhang Hongyong,JPX, Active matrix device utilizing light shielding means for thin film transistors.

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2. Zhang, Hongyong, Active matrix type liquid crystal display device.

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3. Yamazaki,Shunpei; Ohtani,Hisashi; Takano,Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device and method of fabricating the same.

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4. Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.

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5. Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.

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6. Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.

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7. Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.

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8. Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.

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9. Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.

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10. Yamazaki,Shunpei; Ohtani,Hisashi; Takano,Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.

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11. Yamazaki,Shunpei; Ohtani,Hisashi; Takano,Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.

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12. Yamazaki,Shunpei; Ohtani,Hisashi; Takano,Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.

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13. Yamazaki,Shunpei; Ohtani,Hisashi; Takano,Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.

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14. Yamazaki Shunpei,JPX, Display device.

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15. Yamazaki, Shunpei, Display device.

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16. Yamazaki, Shunpei, Display device.

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17. Yamazaki, Shunpei; Murakami, Satoshi; Osame, Mitsuaki, Display device.

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18. Yamazaki, Shunpei; Murakami, Satoshi; Osame, Mitsuaki, Display device.

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19. Yamazaki, Shunpei; Murakami, Satoshi; Osame, Mitsuaki, Display device.

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20. Yamazaki, Shunpei; Murakami, Satoshi; Osame, Mitsuaki, Display device.

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21. Yamazaki, Shunpei; Murakami, Satoshi; Osame, Mitsuaki, Display device.

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22. Yamazaki, Shunpei; Murakami, Satoshi; Osame, Mitsuaki, Display device.

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23. Yamazaki, Shunpei; Murakami, Satoshi; Osame, Mitsuaki, Display device.

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24. Yamazaki, Shunpei; Murakami, Satoshi; Osame, Mitsuaki, Display device.

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25. Yamazaki, Shunpei; Murakami, Satoshi; Osame, Mitsuaki, Display device.

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26. Yamazaki, Shunpei; Takayama, Toru; Murakami, Satoshi; Kimura, Hajime, Display device.

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27. Yamazaki,Shunpei, Display device.

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28. Yamazaki,Shunpei, Display device.

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29. Yamazaki, Shunpei; Murakami, Satoshi; Osame, Mitsuaki, Display device and electronic apparatus.

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30. Takemura, Yasuhiko, Display device and glass member and substrate member having film comprising aluminum, nitrogen and oxygen.

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31. Hayakawa, Masahiko; Murakami, Satoshi; Yamazaki, Shunpei; Akimoto, Kengo, Display device and method of fabricating the same.

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32. Hayakawa,Masahiko; Murakami,Satoshi; Yamazaki,Shunpei; Akimoto,Kengo, Display device and method of fabricating the same.

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33. Yamazaki, Shunpei; Takayama, Toru; Murakami, Satoshi; Kimura, Hajime, Display device including an opening formed in a gate insulating film, a passivation film, and a barrier film.

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34. Yamazaki, Shunpei; Takayama, Toru; Murakami, Satoshi; Kimura, Hajime, Display device with capacitor elements.

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35. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Display switch with double layered gate insulation and resinous interlayer dielectric.

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36. Hongyong Zhang JP, Electro-optical device.

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37. Takemura Yasuhiko,JPX, Electro-optical device.

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38. Ohtani,Hisashi; Koyama,Jun; Yamazaki,Shunpei, Electro-optical device and semiconductor circuit.

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39. Ohtani,Hisashi; Koyama,Jun; Yamazaki,Shunpei, Electro-optical device and semiconductor circuit.

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40. Ohtani, Hisashi; Koyama, Jun; Yamazaki, Shunpei, Electro-optical device and semiconductor device.

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41. Yamazaki,Shunpei; Murakami,Satoshi; Hayakawa,Masahiko; Kato,Kiyoshi; Osame,Mitsuaki; Hirosue,Takashi; Fujikawa,Saishi, Electronic apparatus having a protective circuit.

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42. Roy, Sudipto Ranendra, Embedded metal scheme for liquid crystal display (LCD) application.

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43. Mitsutoshi Miyasaka JP, Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device.

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44. Miyasaka, Mitsutoshi, Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device.

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45. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Fabrication method of semiconductor device.

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46. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Fabrication method of semiconductor device.

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47. Fukada, Takeshi; Sakama, Mitsunori; Teramoto, Satoshi, Glass substrate assembly, semiconductor device and method of heat-treating glass substrate.

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48. Fukada,Takeshi; Sakama,Mitsunori; Teramoto,Satoshi, Glass substrate assembly, semiconductor device and method of heat-treating glass substrate.

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49. Yamazaki, Shunpei; Teramoto, Satoshi, Hybrid circuit and electronic device using same.

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50. Yamazaki,Shunpei; Teramoto,Satoshi, Hybrid circuit and electronic device using same.

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51. Sandhu Gurtej S. ; Iyer Ravi, Integrated circuitry.

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52. Sandhu Gurtej S. ; Iyer Ravi, Integrated circuitry comprising electrically insulative material over interconnect line tops, sidewalls and bottoms.

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53. Yamazaki, Shunpei; Arai, Yasuyuki, Light emitting device.

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54. Yamazaki, Shunpei; Arai, Yasuyuki, Light emitting device.

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55. Yamazaki, Shunpei; Arai, Yasuyuki, Light emitting device.

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56. Yamazaki, Shunpei; Arai, Yasuyuki, Light emitting device.

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57. Yamazaki, Shunpei; Takayama, Toru; Akiba, Mai, Light emitting device.

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58. Yamazaki,Shunpei; Arai,Yasuyuki, Light emitting device.

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59. Yamazaki,Shunpei; Ohnuma,Hideto; Anzai,Aya; Sakakura,Masayuki; Godo,Hiromichi, Light emitting device.

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60. Yamazaki, Shunpei; Takayama, Toru, Light emitting device and electronic apparatus.

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61. Yamazaki, Shunpei; Takayama, Toru, Light emitting device and electronic apparatus.

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62. Yamazaki, Shunpei; Takayama, Toru, Light emitting device and electronic apparatus.

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63. Yamazaki,Shunpei; Takayama,Toru, Light emitting device and electronic apparatus.

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64. Yamazaki, Shunpei; Murakami, Satoshi; Osame, Mitsuaki, Light emitting device and method for manufacturing the same.

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65. Yamazaki,Shunpei; Murakami,Satoshi; Osame,Mitsuaki, Light emitting device and method for manufacturing the same.

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66. Yamazaki,Shunpei; Takayama,Toru; Akiba,Mai, Light emitting device and method of manufacturing the same.

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67. Yamazaki, Shunpei; Takayama, Toru; Akiba, Mai, Light emitting device having an organic light emitting diode that emits white light.

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68. Yamazaki, Shunpei; Takayama, Toru; Akiba, Mai, Light emitting device having an organic light emitting diode that emits white light.

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69. Yamazaki, Shunpei; Arai, Yasuyuki, Light emitting device including a lamination layer.

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70. Yamazaki, Shunepi; Takayama, Toru, Light emitting device, electronic equipment, and organic polarizing film.

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71. Yamazaki,Shunepi; Takayama,Toru, Light emitting device, electronic equipment, and organic polarizing film.

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72. Yamazaki, Shunpei; Takayama, Toru; Maruyama, Junya; Mizukami, Mayumi, Light emitting device, semiconductor device, and method of fabricating the devices.

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73. Yamazaki,Shunpei, Light-emitting device, method of manufacturing a light-emitting device, and electronic equipment.

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74. Yamazaki,Shunpei, Light-emitting device, method of manufacturing a light-emitting device, and electronic equipment.

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75. Yamazaki,Shunpei, Light-emitting device, method of manufacturing a light-emitting device, and electronic equipment.

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76. Yamazaki, Shunpei; Arai, Yasuyuki, Manufacturing method for top-gate type and bottom-gate type thin film transistors.

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77. Ohtani, Hisashi, Metal-gettering method used in the manufacture of crystalline-Si TFT.

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78. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Method for fabricating a semiconductor device.

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79. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Method for fabricating a semiconductor device.

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80. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Method for fabricating a semiconductor device.

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81. Shunpei Yamazaki JP; Satoshi Teramoto JP; Jun Koyama JP; Yasushi Ogata JP; Masahiko Hayakawa JP; Mitsuaki Osame JP, Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization.

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82. Maekawa,Shinji; Akimoto,Kengo, Method for fabricating thin film transistor.

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83. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Fukunaga Takeshi,JPX ; Takemura Yasuhiko,JPX, Method for forming a semiconductor device.

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84. Goo, Ju Seon; Hong, Eun Kee; Kim, Hong Gun; Na, Kyu Tae, Method for forming a silicon oxide layer using spin-on glass.

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85. Yamazaki Shunpei,JPX ; Komaya Jun,JPX ; Miyanaga Akiharu,JPX ; Fukunaga Takeshi,JPX, Method for forming semiconductor thin film.

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86. Hisashi Ohtani JP; Hiroki Adachi JP; Akiharu Miyanaga JP; Toru Takayama JP, Method for manufacturing a semiconductor device.

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87. Ohtani,Hisashi; Adachi,Hiroki; Miyanaga,Akiharu; Takayama,Toru, Method for manufacturing a semiconductor device.

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88. Yamazaki,Shunpei; Yamaguchi,Naoaki; Nakajima,Setsuo, Method for manufacturing a semiconductor device.

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89. Yasuhiko Takemura JP, Method for manufacturing a semiconductor device.

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90. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Method for manufacturing a thin film transistor device.

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91. Yamazaki, Shunpei; Ohnuma, Hideto; Osame, Mitsuaki; Anzai, Aya; Godo, Hiromichi; Futamura, Tomoya, Method for manufacturing display device.

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92. Ohtani, Hisashi; Miyanaga, Akiharu; Teramoto, Satoshi; Yamazaki, Shunpei, Method for manufacturing semiconductor device.

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93. Ohtani, Hisashi; Miyanaga, Akiharu; Teramoto, Satoshi; Yamazaki, Shunpei, Method for manufacturing semiconductor device.

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94. Wada, Takayuki; Terahara, Masanori; Oh, Junji, Method for manufacturing semiconductor device.

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95. Tanaka, Koichiro; Ohnuma, Hideto, Method for manufacturing transistor semiconductor devices with step of annealing to getter metal with phosphorous.

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96. Liao Hung-Che,TWX ; Chin Hsien-Wei,TWX ; Chen Chih-Ming,TWX, Method for preventing backside polysilicon peeling in a 4T+2R SRAM process.

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97. Ohtani Hisashi,JPX, Method for producing a semiconductor device.

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98. Zhang, Hongyong, Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor.

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99. Aiba, Toshiaki; Nojiri, Hidetoshi; Motoi, Taiko; Den, Tohru; Iwasaki, Tatsuya, Method for producing a structure with narrow pores.

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100. Aiba Toshiaki,JPX ; Nojiri Hidetoshi,JPX ; Motoi Taiko,JPX ; Den Tohru,JPX ; Iwasaki Tatsuya,JPX, Method for producing narrow pores and structure having the narrow pores, and narrow pores and structure produced by the method.

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101. Hongyong Zhang JP; Yasuhiko Takemura JP; Toru Takayama JP, Method for producing semiconductor device.

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102. Ohtani, Hisashi; Takemura, Yasuhiko; Miyanaga, Akiharu; Yamazaki, Shunpei, Method for producing semiconductor device.

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103. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Ohnuma Hideto,JPX, Method for producing semiconductor device.

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104. Yamazaki, Shunpei; Ohtani, Hisashi; Ohnuma, Hideto, Method for producing semiconductor device.

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105. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Method for producing semiconductor device.

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106. Zhang, Hongyong; Takemura, Yasuhiko; Takayama, Toru, Method for producing semiconductor device.

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107. Yasuhiko Takemura JP, Method of fabricating a semiconductor device.

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108. Fukunaga,Takeshi; Ohtani,Hisashi; Miyanaga,Akiharu, Method of fabricating a semiconductor device utilizing a catalyst material solution.

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109. Hayakawa, Masahiko; Murakami, Satoshi; Yamazaki, Shunpei; Akimoto, Kengo, Method of fabricating display device.

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110. Nakajima,Setsuo; Ohtani,Hisashi, Method of fabricating semiconductor device.

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111. Yamazaki Shunpei,JPX ; Kusumoto Naoto,JPX ; Teramoto Satoshi,JPX, Method of fabricating semiconductor device.

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112. Nakajima, Setsuo; Ohtani, Hisashi, Method of forming a semiconductor device using a group XV element for gettering by means of infrared light.

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113. Ohtani, Hisashi, Method of forming crystalline silicon film.

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114. Shunpei Yamazaki JP; Mitsunori Sakama JP; Yasuhiko Takemura JP, Method of making crystal silicon semiconductor and thin film transistor.

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115. Isobe,Atsuo; Arao,Tatsuya, Method of manufacturing a semiconductor device.

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116. Ohnuma, Hideto; Yamazaki, Shunpei; Nakajima, Setsuo; Ohtani, Hisashi, Method of manufacturing a semiconductor device.

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117. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Hamatani Toshiji,JPX, Method of manufacturing a semiconductor device.

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118. Yamazaki, Shunpei; Nakamura, Osama; Kajiwara, Masayuki; Koezuka, Junichi; Dairiki, Koji; Mitsuki, Toru; Takayama, Toru; Ohnuma, Hideto; Asami, Taketomi; Ichijo, Mitsuhiro, Method of manufacturing a semiconductor device.

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119. Yamazaki, Shunpei; Nakamura, Osamu; Kajiwara, Masayuki; Koezuka, Junichi; Dairiki, Koji; Mitsuki, Toru; Takayama, Toru; Ohnuma, Hideto; Asami, Taketomi; Ichijo, Mitsuhiro, Method of manufacturing a semiconductor device.

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120. Yamazaki,Shunpei; Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Dairiki,Koji; Mitsuki,Toru; Takayama,Toru; Ohnuma,Hideto; Asami,Taketomi; Ichijo,Mitsuhiro, Method of manufacturing a semiconductor device.

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121. Yamazaki,Shunpei; Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Dairiki,Koji; Mitsuki,Toru; Takayama,Toru; Ohnuma,Hideto; Asami,Taketomi; Ichijo,Mitsuhiro, Method of manufacturing a semiconductor device.

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122. Yamazaki,Shunpei; Ohnuma,Hideto; Dairiki,Koji; Mitsuki,Toru; Takayama,Toru; Akimoto,Kengo, Method of manufacturing a semiconductor device.

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123. Yamazaki,Shunpei; Ohtani,Hisashi; Hamatani,Toshiji, Method of manufacturing a semiconductor device.

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124. Yamazaki, Shunpei; Teramoto, Satoshi; Kusumoto, Naoto; Ohnuma, Hideto, Method of manufacturing a semiconductor device and manufacturing system thereof.

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125. Yamazaki, Shunpei; Teramoto, Satoshi; Kusumoto, Naoto; Ohnuma, Hideto, Method of manufacturing a semiconductor device and manufacturing system thereof.

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126. Hamada,Takashi; Murakami,Satoshi; Yamazaki,Shunpei; Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Takayama,Toru, Method of manufacturing a semiconductor device comprising doping steps using gate electrodes and resists as masks.

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127. Ohtani,Hisashi; Koyama,Jun; Ogata,Yasushi; Yamazaki,Shunpei, Method of manufacturing a semiconductor device having TFTs with uniform characteristics.

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128. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Method of manufacturing a semiconductor device including reduction of a catalyst.

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129. Isobe, Atsuo; Arao, Tatsuya, Method of manufacturing a semiconductor device, utilizing a laser beam for crystallization.

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130. Shunpei Yamazaki JP, Method of manufacturing a semiconductor film and method of manufacturing a semiconductor device.

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131. Yamazaki, Shunpei, Method of manufacturing a semiconductor film and method of manufacturing a semiconductor device.

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132. Yamazaki,Shunpei, Method of manufacturing a semiconductor film and method of manufacturing a semiconductor device by transferring crystallization promoting material in the first semiconductor film to the second semico.

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133. Gyoo Chul Jo KR, Method of manufacturing a substrate for an electronic device by using etchant and electronic device having the substrate.

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134. Jo,Gyoo Chul, Method of manufacturing a substrate for an electronic device by using etchant and electronic device having the substrate.

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135. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Method of manufacturing a thin film transistor device.

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136. Ohtani Hisashi,JPX, Method of manufacturing a thin film transistor involving laser treatment.

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137. Nakamura, Osamu; Yamazaki, Shunpei; Dairiki, Koji; Kajiwara, Masayuki; Koezuka, Junichi; Murakami, Satoshi, Method of manufacturing semiconductor device.

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138. Nakamura, Osamu; Yamazaki, Shunpei; Dairiki, Koji; Kajiwara, Masayuki; Koezuka, Junichi; Murakami, Satoshi, Method of manufacturing semiconductor device.

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139. Nakamura,Osamu; Yamazaki,Shunpei; Dairiki,Koji; Kajiwara,Masayuki; Koezuka,Junichi; Murakami,Satoshi, Method of manufacturing semiconductor device.

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140. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Miyanaga Akiharu,JPX, Method of manufacturing semiconductor device.

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141. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Miyanaga Akiharu,JPX, Method of manufacturing semiconductor device.

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142. Yamazaki,Shunpei; Mitsuki,Toru, Method of manufacturing semiconductor device.

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143. Yamazaki, Shunpei; Nakamura, Osamu; Kajiwara, Masayuki; Koezuka, Junichi, Method of manufacturing semiconductor device and semiconductor device.

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144. Yamazaki,Shunpei; Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi, Method of manufacturing semiconductor device that includes selectively adding a noble gas element.

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145. Yieh Ellie ; Xia Li-Qun ; Nemani Srinivas, Methods for shallow trench isolation.

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146. Yamazaki Shunpei,JPX ; Arai Yasuyuki,JPX, Microcrystal silicon film and its manufacturing method, and photoelectric conversion device and its manufacturing method.

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147. Yamazaki, Shunpei; Takayama, Toru; Akiba, Mai, Organic light emitting device.

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148. Yamazaki, Shunpei; Takayama, Toru; Akiba, Mai, Organic light emitting device having dual flexible substrates.

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149. Roy Sudipto Ranendra,SGX, Passivation scheme for LCD and other applications.

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150. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Process for fabricating a thin film transistor semiconductor device.

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151. Yamazaki,Shunpei; Ohtani,Hisashi; Mitsuki,Toru; Ohnuma,Hideto; Takano,Tamae; Kasahara,Kenji; Dairiki,Koji, Process for manufacturing a semiconductor device.

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152. Yamazaki,Shunpei; Ohtani,Hisashi; Mitsuki,Toru; Ohnuma,Hideto; Takano,Tamae; Kasahara,Kenji; Dairiki,Koji, Process for manufacturing a semiconductor device.

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153. Yamazaki,Shunpei; Arai,Yasuyuki, Process for producing a photoelectric conversion device that includes using a gettering process.

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154. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor active region of TFTs having radial crystal grains through the whole area of the region.

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155. Hongyong Zhang JP; Hideki Uochi JP; Toru Takayama JP; Shunpei Yamazaki JP; Yasuhiko Takemura JP, Semiconductor and process for fabricating the same.

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156. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Semiconductor and process for fabricating the same.

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157. Kasahara, Kenji, Semiconductor apparatus having semiconductor circuits made of semiconductor devices, and method of manufacture thereof.

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158. Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko, Semiconductor circuit and method of fabricating the same.

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159. Yamazaki, Shunpei; Yamaguchi, Naoaki; Nakajima, Setsuo, Semiconductor device.

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160. Takemura, Yasuhiko; Teramoto, Satoshi, Semiconductor device and a method for manufacturing the same.

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161. Takemura, Yasuhiko; Teramoto, Satoshi, Semiconductor device and a method for manufacturing the same.

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162. Takemura, Yasuhiko; Teramoto, Satoshi, Semiconductor device and a method for manufacturing the same.

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163. Yamazaki,Shunpei; Murakami,Satoshi; Monoe,Shigeharu, Semiconductor device and display element using semiconductor device.

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164. Kuwabara,Hideaki, Semiconductor device and electronic device.

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165. Zhang, Hongyong, Semiconductor device and electronic device.

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166. Zhang,Hongyong, Semiconductor device and electronic device.

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167. Hisashi Ohtani JP; Tamae Takano JP; Chiho Kokubo JP, Semiconductor device and fabricating method thereof.

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168. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Semiconductor device and fabrication method thereof.

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169. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Semiconductor device and fabrication method thereof.

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170. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki, Semiconductor device and fabrication method thereof.

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171. Shunpei Yamazaki JP; Satoshi Teramoto JP; Jun Koyama JP; Yasushi Ogata JP; Masahiko Hayakawa JP; Mitsuaki Osame JP; Hisashi Ohtani JP; Toshiji Hamatani JP, Semiconductor device and its manufacturing method.

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172. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and its manufacturing method.

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173. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and its manufacturing method.

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174. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and its manufacturing method.

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175. Nakamura, Osamu; Kajiwara, Masayuki; Yamazaki, Shunpei; Ohnuma, Hideto, Semiconductor device and manufacturing method of the same.

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176. Nakamura,Osamu; Kajiwara,Masayuki; Yamazaki,Shunpei; Ohnuma,Hideto, Semiconductor device and manufacturing method of the same.

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177. Suzawa, Hideomi; Kusuyama, Yoshihiro, Semiconductor device and manufacturing method thereof.

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178. Suzawa, Hideomi; Kusuyama, Yoshihiro, Semiconductor device and manufacturing method thereof.

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179. Tanaka, Koichiro; Ohnuma, Hideto, Semiconductor device and manufacturing method thereof.

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180. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX ; Ohtani Hisashi,JPX ; Hamatani Toshiji,JPX, Semiconductor device and method for fabricating the same.

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181. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method for fabricating the same.

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182. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method for fabricating the same.

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183. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and method for fabricating the same.

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184. Yamazaki Shunpei,JPX ; Zhang Hongyong,JPX, Semiconductor device and method for forming the same.

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185. Yamazaki, Shunpei; Zhang, Hongyong; Takemura, Yasuhiko, Semiconductor device and method for forming the same.

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186. Yamazaki,Shunpei; Zhang,Hongyong, Semiconductor device and method for forming the same.

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187. Yamazaki,Shunpei; Zhang,Hongyong, Semiconductor device and method for forming the same.

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188. Adachi Hiroki,JPX ; Takenouchi Akira,JPX ; Fukada Takeshi,JPX ; Uehara Hiroshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.

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189. Adachi Hiroki,JPX ; Takenouchi Akira,JPX ; Fukada Takeshi,JPX ; Uehara Hiroshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.

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190. Hiroki Adachi JP; Akira Takenouchi JP; Takeshi Fukada JP; Hiroshi Uehara JP; Yasuhiko Takemura JP, Semiconductor device and method for manufacturing the same.

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191. Hongyong Zhang JP; Hideki Uochi JP; Toru Takayama JP; Takeshi Fukunaga JP; Yasuhiko Takemura JP, Semiconductor device and method for manufacturing the same.

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192. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.

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193. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.

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194. Miyanaga,Akiharu; Ohtani,Hisashi; Takemura,Yasuhiko, Semiconductor device and method for manufacturing the same.

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195. Muranaka, Koji, Semiconductor device and method for manufacturing the same.

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196. Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Yamazaki,Shunpei; Kuwabara,Hideaki, Semiconductor device and method for manufacturing the same.

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197. Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.

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198. Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.

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199. Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.

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200. Takemura,Yasuhiko, Semiconductor device and method for manufacturing the same.

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201. Takemura,Yasuhiro, Semiconductor device and method for manufacturing the same.

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202. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Fukunaga Takeshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.

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203. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.

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204. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.

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205. Yamazaki, Shunpei; Yamaguchi, Naoaki; Nakajima, Setsuo, Semiconductor device and method for producing it.

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206. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Teramoto Satoshi,JPX, Semiconductor device and method for producing the same.

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207. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Teramoto Satoshi,JPX, Semiconductor device and method for producing the same.

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208. Yamazaki Shunpei,JPX, Semiconductor device and method of fabricating same.

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209. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method of fabricating same.

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210. Yamazaki,Shunpei, Semiconductor device and method of fabricating same.

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211. Yamazaki,Shunpei, Semiconductor device and method of fabricating same.

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212. Yamazaki,Shunpei, Semiconductor device and method of fabricating same.

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213. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and method of fabricating same.

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214. Ohtani, Hisashi; Fujimoto, Etsuko, Semiconductor device and method of fabricating the same.

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215. Ohtani, Hisashi; Fujimoto, Etsuko, Semiconductor device and method of fabricating the same.

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216. Takemura, Yasuhiko, Semiconductor device and method of fabricating the same.

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217. Takemura,Yasuhiko, Semiconductor device and method of fabricating the same.

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218. Hamada, Takashi; Murakami, Satoshi; Yamazaki, Shunpei; Nakamura, Osamu; Kajiwara, Masayuki; Koezuka, Junichi; Takayama, Toru, Semiconductor device and method of manufacturing the same.

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219. Hamada,Takashi; Murakami,Satoshi; Yamazaki,Shunpei; Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Takayama,Toru, Semiconductor device and method of manufacturing the same.

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220. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method of manufacturing the same.

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221. Ohtani, Hisashi; Takano, Tamae; Yamazaki, Shunpei, Semiconductor device and method of manufacturing the same.

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222. Ohtani, Hisashi; Takano, Tamae; Yamazaki, Shunpei, Semiconductor device and method of manufacturing the same.

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223. Ohtani,Hisashi; Takano,Tamae; Yamazaki,Shunpei, Semiconductor device and method of manufacturing the same.

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224. Shunpei Yamazaki JP, Semiconductor device and method of manufacturing the same.

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225. Shunpei Yamazaki JP; Hisashi Ohtani JP; Jun Koyama JP; Takeshi Fukunaga JP, Semiconductor device and method of manufacturing the same.

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226. Yamazaki, Shunpei; Ohtani, Hisashi; Koyama, Jun; Fukunaga, Takeshi, Semiconductor device and method of manufacturing the same.

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227. Yamazaki,Shunpei; Ohtani,Hisashi; Koyama,Jun; Fukunaga,Takeshi, Semiconductor device and method of manufacturing the same.

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228. Zhang Hongyong,JPX, Semiconductor device and method of manufacturing the same.

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229. Zhang Hongyong,JPX, Semiconductor device and method of manufacturing the same.

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230. Zhang, Hongyong, Semiconductor device and method of manufacturing the same.

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231. Zhang,Hongyong, Semiconductor device and method of manufacturing the same.

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232. Shunpei Yamazaki JP; Naoaki Yamaguchi JP; Setsuo Nakajima JP, Semiconductor device comprising a bottom gate type thin film transistor.

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233. Ohtani, Hisashi; Adachi, Hiroki; Miyanaga, Akiharu; Takayama, Toru, Semiconductor device comprising first insulating film, second insulating film comprising organic resin on the first insulating film, and pixel electrode over the second insulating film.

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234. Hideki Uochi JP, Semiconductor device comprising thin film transistors having a passivation film formed thereon.

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235. Hongyong Zhang JP; Toru Takayama JP; Yasuhiko Takemura JP; Akiharu Miyanaga JP; Hisashi Ohtani JP, Semiconductor device forming method.

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236. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX, Semiconductor device forming method.

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237. Zhang,Hongyong; Takayama,Toru; Takemura,Yasuhiko; Miyanaga,Akiharu; Ohtani,Hisashi, Semiconductor device forming method.

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238. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Takayama Toru,JPX ; Uochi Hideki,JPX, Semiconductor device having a catalyst enhanced crystallized layer.

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239. Zhang,Hongyong, Semiconductor device having a conductive layer with a light shielding part.

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240. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device having a crystalline semiconductor film.

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241. Yamazaki, Shunpei; Zhang, Hongyong; Takemura, Yasuhiko, Semiconductor device having an aluminum nitride film.

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242. Zhang, Hongyong; Takayama, Toru, Semiconductor device having channel formation region comprising silicon and containing a group IV element.

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243. Yamazaki,Shunpei; Ohtani,Hisashi; Koyama,Jun; Fukunaga,Takeshi, Semiconductor device having crystalline semiconductor layer.

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244. Kasahara,Kenji, Semiconductor device having two insulating films provided over a substrate.

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245. Yamazaki, Shunpei; Murakami, Satoshi; Hayakawa, Masahiko; Kato, Kiyoshi; Osame, Mitsuaki; Hirosure, Takashi; Fujikawa, Saishi, Semiconductor device including multiple insulating films.

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246. Yamazaki, Shunpei; Murakami, Satoshi; Hayakawa, Masahiko; Kato, Kiyoshi; Osame, Mitsuaki; Hirosure, Takashi; Fujikawa, Saishi, Semiconductor device including multiple insulating films.

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247. Ohtani, Hisashi; Takano, Tamae; Kokubo, Chiho, Semiconductor device method of manufacturing.

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248. Zhang,Hongyong; Takayama,Toru; Takemura,Yasuhiko; Miyanaga,Akiharu; Ohtani,Hisashi, Semiconductor device structure.

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249. Ohtani,Hisashi; Fujimoto,Etsuko, Semiconductor device that includes a silicide region that is not in contact with the lightly doped region.

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250. Fukada,Takeshi, Semiconductor device with diamond-like carbon film on backside of substrate.

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251. Yamazaki, Shunpei, Semiconductor device with heat-resistant gate.

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252. Dekker Ronald,NLX ; Maas Henricus G. R.,NLX ; Hahn Steffen Wilhelm,DEX, Semiconductor device with semiconductor elements formed in a layer of semiconductor material glued on a support wafer.

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253. Nakazawa, Misako; Kasahara, Kenji; Ohtani, Hisashi, Semiconductor device, and method of fabricating the same.

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254. Nakazawa,Misako; Kasahara,Kenji; Ohtani,Hisashi, Semiconductor device, and method of fabricating the same.

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255. Yamazaki, Shunpei; Murakami, Satoshi; Hayakawa, Masahiko; Kato, Kiyoshi; Osame, Mitsuaki, Semiconductor display device.

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256. Yamazaki, Shunpei; Murakami, Satoshi; Hayakawa, Masahiko; Kato, Kiyoshi; Osame, Mitsuaki, Semiconductor display device.

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257. Yamazaki, Shunpei; Murakami, Satoshi; Hayakawa, Masahiko; Kato, Kiyoshi; Osame, Mitsuaki, Semiconductor display device.

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258. Yamazaki, Shunpei; Murakami, Satoshi; Hayakawa, Masahiko; Kato, Kiyoshi; Osame, Mitsuaki, Semiconductor display device.

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259. Yamazaki, Shunpei; Murakami, Satoshi; Hayakawa, Masahiko; Kato, Kiyoshi; Osame, Mitsuaki, Semiconductor display device.

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260. Yamazaki, Shunpei; Murakami, Satoshi; Hayakawa, Masahiko; Kato, Kiyoshi; Osame, Mitsuaki, Semiconductor display device.

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261. Yamazaki, Shunpei; Murakami, Satoshi; Hayakawa, Masahiko; Kato, Kiyoshi; Osame, Mitsuaki; Hirosue, Takashi; Fujikawa, Saishi, Semiconductor display device.

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262. Yamazaki,Shunpei; Murakami,Satoshi; Hayakawa,Masahiko; Kato,Kiyoshi; Osame,Mitsuaki; Hirosue,Takashi; Fujikawa,Saishi, Semiconductor display device and method of manufacturing the same.

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263. Murakami, Satoshi; Hayakawa, Masahiko; Yamazaki, Shunpei, Semiconductor element and display device using the same.

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264. Murakami, Satoshi; Hayakawa, Masahiko; Yamazaki, Shunpei, Semiconductor element and display device using the same.

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265. Murakami, Satoshi; Hayakawa, Masahiko; Yamazaki, Shunpei, Semiconductor element and display device using the same.

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266. Murakami, Satoshi; Hayakawa, Masahiko; Yamazaki, Shunpei, Semiconductor element and display device using the same.

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267. Murakami, Satoshi; Hayakawa, Masahiko; Yamazaki, Shunpei, Semiconductor element and display device using the same.

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268. Murakami, Satoshi; Hayakawa, Masahiko; Yamazaki, Shunpei, Semiconductor element and display device using the same.

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269. Murakami, Satoshi; Hayakawa, Masahiko; Yamazaki, Shunpei, Semiconductor element and display device using the same.

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270. Murakami, Satoshi; Hayakawa, Masahiko; Yamazaki, Shunpei, Semiconductor element and display device using the same.

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271. Murakami, Satoshi; Hayakawa, Masahiko; Yamazaki, Shunpei, Semiconductor element and display device using the same.

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272. Murakami,Satoshi; Hayakawa,Masahiko; Yamazaki,Shunpei, Semiconductor element and display device using the same.

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273. Koyama,Jun; Kawasaki,Yuji, Semiconductor integrated circuit.

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274. Koyama,Jun; Kawasaki,Yuji, Semiconductor integrated circuit.

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275. Yamada, Keiichi, Semiconductor integrated circuit device, and method of manufacturing the same.

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276. Sandhu Gurtej S. ; Iyer Ravi, Semiconductor processing method of forming electrically conductive interconnect lines and integrated circuitry.

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277. Gurtej S. Sandhu ; Ravi Iyer, Semiconductor processing method of forming insulative material over conductive lines.

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278. Yamazaki, Shunpei; Koyama, Jun; Miyanaga, Akiharu; Fukunaga, Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.

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279. Yamazaki, Shunpei; Koyama, Jun; Miyanaga, Akiharu; Fukunaga, Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.

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280. Yamazaki,Shunpei; Koyama,Jun; Miyanaga,Akiharu; Fukunaga,Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.

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281. Ohtani Hisashi,JPX ; Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Miyanaga Akiharu,JPX, Semiconductor thin film and semiconductor device.

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282. Shunpei Yamazaki JP; Hisashi Ohtani JP; Toru Mitsuki JP; Akiharu Miyanaga JP; Yasushi Ogata JP, Semiconductor thin film and semiconductor device.

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283. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Mitsuki Toru,JPX ; Miyanaga Akiharu,JPX ; Ogata Yasushi,JPX, Semiconductor thin film and semiconductor device.

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284. Yamazaki, Shunpei; Ohtani, Hisashi; Mitsuki, Toru; Miyanaga, Akiharu; Ogata, Yasushi, Semiconductor thin film and semiconductor device.

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285. Yamazaki, Shunpei; Ohtani, Hisashi; Mitsuki, Toru; Miyanaga, Akiharu; Ogata, Yasushi, Semiconductor thin film and semiconductor device.

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286. Yamazaki, Shunpei; Ohtani, Hisashi; Mitsuki, Toru; Miyanaga, Akiharu; Ogata, Yasushi, Semiconductor thin film and semiconductor device.

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287. Yamazaki,Shunpei; Ohtani,Hisashi; Mitsuki,Toru; Miyanaga,Akiharu; Ogata,Yasushi, Semiconductor thin film and semiconductor device.

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288. Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Miyanaga Akiharu,JPX ; Fukunaga Takeshi,JPX, Semiconductor thin film, semiconductor device and manufacturing method thereof.

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289. Yamazaki,Shunpei; Koyama,Jun; Miyanaga,Akiharu; Fukunaga,Takeshi, Semiconductor thin film, semiconductor device and manufacturing method thereof.

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290. Yamazaki,Shunpei; Koyama,Jun; Miyanaga,Akiharu; Fukunaga,Takeshi, Semiconductor thin film, semiconductor device and manufacturing method thereof.

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291. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Takayama Toru,JPX ; Uochi Hideki,JPX, Semiconductor, semiconductor device, and method for fabricating the same.

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292. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Takayama Toru,JPX ; Uochi Hideki,JPX, Semiconductor, semiconductor device, and method for fabricating the same.

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293. Yamazaki,Shunpei; Takemura,Yasuhiko; Zhang,Hongyong; Takayama,Toru; Uochi,Hideki, Semiconductor, semiconductor device, and method for fabricating the same.

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294. Kim, Young; Song, I-hun; Ahn, Seung-eon; Jeon, Sang-hun; Kim, Chang-jung; Park, Sung-ho, Simplified light sensing circuit, light sensing apparatus including the light sensing circuit, method of driving the light sensing apparatus, and image acquisition apparatus and optical touch screen apparatus including the light sensing apparatus.

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295. Maszara Witold ; Krisnan Srinath, Structure and method of formation of body contacts in SOI MOSFETS to elimate floating body effects.

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296. Iwasaki, Tatsuya; Den, Tohru, Structure having narrow pores.

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297. Nakajima Setsuo,JPX ; Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Teramoto Satoshi,JPX ; Hamatani Toshiji,JPX, Substrate of semiconductor device and fabrication method thereof as well as semiconductor device and fabrication method thereof.

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298. Nakajima,Setsuo; Yamazaki,Shunpei; Ohtani,Hisashi; Teramoto,Satoshi; Hamatani,Toshiji, Substrate of semiconductor device and fabrication method thereof as well as semiconductor device and fabrication method thereof.

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299. Hyoun Ee Kim KR; Young Hag Koh KR, Surface treated aluminum nitride and fabricating method thereof.

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300. Yamazaki, Shunpei; Miyanaga, Akiharu; Koyama, Jun; Fukunaga, Takeshi, Thin film semiconductor device and its manufacturing method.

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301. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX ; Ohtani Hisashi,JPX ; Hamatani Toshiji,JPX, Thin film transistor having grain boundaries with segregated oxygen and halogen elements.

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302. Takemura, Yasuhiko; Teramoto, Satoshi, Thin film transistor incorporating an integrated capacitor and pixel region.

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303. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Thin film type monolithic semiconductor device.

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304. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Thin film type monolithic semiconductor device.

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