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Method of forming bond pad structure for the via plug process 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/60
출원번호 US-0703918 (1996-08-22)
발명자 / 주소
  • Shiue Ruey-Yun (Hsin-Chu TWX) Wu Wen-Teng (Hsin-Chu TWX) Shieh Pi-Chen (Hsinchu TWX) Liu Chin-Kai (Hsin-Chu TWX)
출원인 / 주소
  • Taiwan Semiconductor Manufacturing Company, Ltd. (Hsin-Chu TWX 03)
인용정보 피인용 횟수 : 84  인용 특허 : 0

초록

A bond pad structure and method of forming the bond pad structure which provides for reliable interconnections between the bond pad structure and the next level of circuit integration. The bond pad structure uses three metal pads separated by layers of dielectric. Via plugs are formed between the fi

대표청구항

A method of forming a bond pad, comprising the steps of: forming a first dielectric layer; forming a square first metal pad on said first dielectric layer; forming a second dielectric layer over said first metal pad; forming a first number of holes in said second dielectric layer; filling said first

이 특허를 인용한 특허 (84)

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